IRG8P15N120KDPbF
IRG8P15N120KD-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
V
CES
= 1200V
I
C
= 15A, T
C
=100°C
t
SC
10µs,
T
J(max)
= 150°C
V
CE(ON)
typ. = 1.7V
@ I
C
= 10A
G
C
G
E
C
E
G C
E
Applications
• Industrial Motor Drive
• UPS
• Solar Inverters
• Welding
Features
Benchmark Low V
CE(ON)
10μs Short Circuit SOA
Positive V
CE(ON)
Temperature Coefficient
Square RBSOA and high I
LM-
rating
Lead-Free, RoHS compliant
Base part number
IRG8P15N120KDPbF
IRG8P15N120KD-EPbF
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Package Type
TO-247AC
TO-247AD
n-channel
IRG8P15N120KDPbF
TO‐247AC
G
Gate
C
Collector
IRG8P15N120KD‐EPbF
TO‐247AD
E
Emitter
Benefits
High Efficiency in a Motor Drive Applications
Increases margin for short circuit protection scheme
Excellent Current Sharing in Parallel Operation
Rugged Transient Performance
Environmentally friendly
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRG8P15N120KDPbF
IRG8P15N120KD-EPbF
Max.
1200
30
15
30
40
20
11
40
±30
125
50
-40 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
1.0
1.7
–––
–––
Units
V
Collector-to-Emitter Voltage
Continuous Collector Current (Silicon Limited)
Continuous Collector Current
Pulse Collector Current (see fig. 2)
Clamped Inductive Load Current (see fig. 3)
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
A
V
W
C
Thermal Resistance
R
JC
(IGBT)
R
JC
(Diode)
R
CS
R
JA
Parameter
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Units
°C/W
1
www.irf.com
© 2014 International Rectifier
Submit Datasheet Feedback
November 4, 2014
IRG8P15N120KDPbF/IRG8P15N120KD-EPbF
Max.
—
—
Units
Conditions
V
V
GE
= 0V, I
C
= 250µA
V/°C V
GE
= 0V, I
C
= 1mA (25°C-150°C)
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ.
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
1200
—
—
1.1
V
(BR)CES
/T
J
Temperature Coeff. of Breakdown Voltage
—
1.7
Collector-to-Emitter Saturation Voltage
V
CE(on)
—
2.0
Gate Threshold Voltage
5.0
—
V
GE(th)
—
-16
V
GE(th)
/T
J
Threshold Voltage Temperature Coeff.
gfe
Forward Transconductance
—
5.7
—
1.0
I
CES
Collector-to-Emitter Leakage Current
—
1.0
Gate-to-Emitter Leakage Current
—
—
I
GES
—
2.1
Diode Forward Voltage Drop
V
F
—
2.4
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
SCSOA
Erec
t
rr
I
rr
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V.
R
is measured at T
J
of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
Maximum limits are based on statistical sample size characterization.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement
.
2.0
V
I
C
= 10A, V
GE
= 15V, T
J
= 25°C
—
I
C
= 10A, V
GE
= 15V, T
J
= 150°C
6.5
V
V
CE
= V
GE
, I
C
= 400µA
—
mV/°C V
CE
= V
GE
, I
C
= 400µA (25°C-150°C)
—
S
V
CE
= 50V, I
C
= 10A, PW = 20µs
30
µA V
GE
= 0V, V
CE
= 1200V
—
mA
V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
±100
nA V
GE
= ±30V
2.7
V
I
F
= 10A
—
I
F
= 10A, T
J
= 150°C
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max Units
Conditions
65
98
I
C
= 10A
6.0
9.0
nC V
GE
= 15V
V
CC
= 600V
40
60
0.6
—
0.6
—
mJ
I
C
= 10A, V
CC
= 600V, V
GE
=15V
1.2
—
R
G
= 10, T
J
= 25°C
15
—
Energy losses include tail & diode
20
—
ns reverse recovery
170
—
200
—
0.9
—
1.1
2.0
15
20
250
330
1290
60
30
—
—
—
—
—
—
—
—
—
mJ
I
C
= 10A, V
CC
= 600V, V
GE
=15V
R
G
= 10, T
J
= 150°C
Energy losses include tail & diode
reverse recovery
ns
FULL SQUARE
10
—
—
—
—
0.8
60
26
—
—
—
—
V
GE
= 0V
pF V
CC
= 30V
f = 1.0Mhz
T
J
= 150°C, I
C
= 40A
V
CC
= 960V, Vp
≤
1200V
V
GE
= +20V to 0V
T
J
= 150°C,V
CC
= 600V, Vp
≤
1200V
µs
V = +15V to 0V
GE
mJ
ns
A
T
J
= 150°C
V
CC
= 600V, I
F
= 10A
V
GE
= 15V, Rg = 10
2
www.irf.com
© 2014 International Rectifier
Submit Datasheet Feedback
November 4, 2014
30
25
Load Current ( A )
IRG8P15N120KDPbF/IRG8P15N120KD-EPbF
For both:
Duty cycle : 50%
Tj = 150°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 50W
20
15
Square Wave:
10
5
0
0.1
V
CC
I
Diode as specified
1
f , Frequency ( kHz )
10
100
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
100
100
10
10µsec
IC (A)
1
100µsec
1msec
IC (A)
10
0.1
DC
Tc = 25°C
Tj = 150°C
Single Pulse
1
1
10
100
VCE (V)
1000
10000
10
100
VCE (V)
1000
10000
0.01
Fig. 2
- Forward SOA
T
C
= 25°C; T
J
≤
150°C; V
GE
= 15V
100
100
Fig. 3
- Reverse Bias SOA
T
J
= 150°C; V
GE
= 20V
10
ICE (A)
ICE (A)
10
1.0
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0
2
4
6
V CE (V)
8
10
1
Tc = -40°C
Tc = 25°C
Tc = 150°C
0.1
0.1
0
2
4
6
V CE (V)
8
10
Fig. 4
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 20µs
3
www.irf.com
© 2014 International Rectifier
Fig. 5
- Typ. IGBT Saturation Voltage
V
GE
= 15V; tp = 20µs
Submit Datasheet Feedback
November 4, 2014
100
IRG8P15N120KDPbF/IRG8P15N120KD-EPbF
16
VGE, Gate-to-Emitter Voltage (V)
14
12
10
8
6
4
2
0
VCES = 600V
VCES = 400V
10
ICE (A)
1
TJ = -40°C
TJ = 25°C
TJ = 150°C
0.1
4
6
8
10
V GE (V)
12
14
16
0
20
40
60
Q G, Total Gate Charge (nC)
Fig. 6
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 20µs
2.5
EOFF @ Tj = 150°C
EON @ Tj = 150°C
ERR @ Tj = 150°C
Fig. 7
- Typical Gate Charge vs. V
GE
I
CE
= 10A
1000
tF
tdOFF
Swiching Time (ns)
2.0
100
Energy (mJ)
1.5
EOFF @ Tj = 25°C
EON @ Tj = 25°C
ERR @ Tj = 25°C
1.0
tR
10
tdON
0.5
1
0.0
2
4
6
8
10
12
14
16
18
20
0
4
8
IC (A)
12
16
20
IC (A)
Fig. 8
- Typ. Energy Loss vs. I
C
V
CE
= 600V, R
G
= 10; V
GE
= 15V
2.5
EON @ Tj = 150°C
EOFF @ Tj = 150°C
ERR @ Tj = 150°C
EON @ Tj = 25°C
EOFF @ Tj = 25°C
ERR @ Tj = 25°
Fig. 9
- Typ. Switching Time vs. I
C
T
J
= 150°C; V
CE
= 600V, R
G
= 10; V
GE
= 15V
1000
tdOFF
2.0
Swiching Time (ns)
100
tF
tdON
tR
Energy (mJ)
1.5
1.0
10
0.5
1
8
16
24
32
Rg (
)
40
48
56
8
16
24
32
RG (
)
40
48
56
0.0
Fig. 10
- Typ. Energy Loss vs. R
G
V
CE
= 600V, I
CE
= 10A; V
GE
= 15V
4
www.irf.com
© 2014 International Rectifier
Fig. 11
- Typ. Switching Time vs. R
G
T
J
= 150°C; V
CE
= 600V, I
CE
= 10A; V
GE
= 15V
Submit Datasheet Feedback
November 4, 2014
IRG8P15N120KDPbF/IRG8P15N120KD-EPbF
30
28
26
IRR (A)
1200
VCC = 600V
Tj = 150°C
VGE = 15V
IF = 10A
Energy (µJ)
R G = 10
1100
1000
900
800
700
600
500
RG = 10
RG = 22
RG = 47
RG = 10
24
22
20
18
16
600
700
800
900 1000 1100 1200 1300
diF /dt (A/µs)
R G =
R G =
R G =
4
8
12
IF (A)
16
20
Fig. 12
- Typ. I
RR
vs. di/dt
Fig. 13
- Typ. Diode E
RR
vs. I
F
T
J
= 150°C
100
10
-40°C
25°C
150°C
1
IF (A)
0.1
0.0
1.0
2.0
3.0
V F (V)
4.0
5.0
6.0
Fig. 14
- Typ. Diode Forward Voltage
Drop Characteristics
5
www.irf.com
© 2014 International Rectifier
Submit Datasheet Feedback
November 4, 2014
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
