Freescale Semiconductor
Technical Data
Document Number: MRF373A
Rev. 7, 9/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
470 - 860 MHz, 75 W, 32 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B - 05, STYLE 1
NI - 360
MRF373ALR1
CASE 360C - 05, STYLE 1
NI - 360S
MRF373ALSR1
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
MRF373ALR1
MRF373ALSR1
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
stg
T
C
T
J
Symbol
V
DSS
V
GS
P
D
Value
- 0.5, +70
- 0.5, +15
197
1.12
278
1.59
- 65 to +150
150
200
Unit
Vdc
Vdc
W
W/°C
W
W/°C
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
MRF373ALR1
MRF373ALSR1
Symbol
R
θJC
Value
0.89
0.63
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
MRF373ALR1
MRF373ALSR1
Class
1 (Minimum)
M2 (Minimum)
M1 (Minimum)
©
Freescale Semiconductor, Inc., 2008. All rights reserved.
MRF373ALR1 MRF373ALSR1
1
Freescale Semiconductor
RF Product Device Data
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
Designed for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of these
devices make them ideal for large - signal, common source amplifier applica-
tions in 28/32 volt transmitter equipment.
•
Typical CW Performance at 860 MHz, 32 Volts, Narrowband Fixture
Output Power — 75 Watts
Power Gain — 18.2 dB
D
Efficiency — 60%
•
Capable of Handling 10:1 VSWR @ 32 Vdc, 860 MHz,
75 Watts CW Output Power
Features
•
Integrated ESD Protection
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal
G
Impedance Parameters
•
Low Gold Plating Thickness on Leads.
L Suffix Indicates 40μ″ Nominal.
S
•
RoHS Compliant
•
In Tape and Reel. R1 = 500 units per 32 mm, 13 inch Reel.
MRF373ALR1
MRF373ALSR1
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Drain- Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
=1
μA)
V
(BR)DSS
I
DSS
I
GSS
70
—
—
—
—
—
—
1
1
Vdc
Symbol
Min
Typ
Max
Unit
Gate- Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 V, I
D
= 200
μA)
Gate Quiescent Voltage
(V
DS
= 32 V, I
D
= 100 mA)
Drain- Source On - Voltage
(V
GS
= 10 V, I
D
= 3 A)
Dynamic Characteristics
Input Capacitance
(V
DS
= 32 V, V
GS
= 0, f = 1 MHz)
Output Capacitance
(V
DS
= 32 V, V
GS
= 0, f = 1 MHz)
Reverse Transfer Capacitance
(V
DS
= 32 V, V
GS
= 0, f = 1 MHz)
Functional Characteristics
(50 ohm system)
Common Source Power Gain
(V
DD
= 32 V, P
out
= 75 W CW, I
DQ
= 200 mA, f = 860 MHz)
Drain Efficiency
(V
DD
= 32 V, P
out
= 75 W CW, I
DQ
= 200 mA, f = 860 MHz)
μAdc
V
GS(th)
V
GS(Q)
V
DS(on)
2
2.5
—
2.9
3.3
0.41
4
4.5
0.45
Vdc
Vdc
Vdc
C
iss
C
oss
C
rss
—
—
—
98.5
49
2
—
—
—
pF
pF
pF
G
ps
η
16.5
56
18.2
60
—
—
dB
%
MRF373ALR1 MRF373ALSR1
2
Freescale Semiconductor
RF Product Device Data
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
Zero Gate Voltage Drain Current
(V
DS
= 32 Vdc, V
GS
= 0 Vdc)
μAdc
R3
V
GG
R2 C12
C14
C17
C13
C7
C1
C9
CUT OUT AREA
C8
C2
C3
C4
C16
C15
L1
C5
C6
V
DD
R1
C11
C10
RF INPUT
RF OUTPUT
MRF373A
Rev 01
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will
have no impact on form, fit or function of the current product.
Figure 1. MRF373ALR1/ALSR1 Narrowband Test Circuit Component Layout
Table 5. MRF373ALR1/ALSR1 Narrowband Test Circuit Component Layout Designations and Values
Designation
C1, C2
C3
C4
C5, C10
C6
C7
C8
C9
C11
C12
C13
C14, C15
C16
C17
L1A
R1, R2
R3
PCB
18 pF Chip Capacitors
12 pF Chip Capacitor
1.8 pF Chip Capacitor
51 pF Chip Capacitors
0.3 pF Chip Capacitor (Used only on the MRF373AS)
15 pF Chip Capacitor
10 pF Chip Capacitor
2.7 pF Chip Capacitor
0.5 pF Chip Capacitor
1000 pF Chip Capacitor
39 pF Chip Capacitor
470 pF Chip Capacitors
2.2
mF,
100 V Chip Capacitor
10
mF,
35 V Tantalum Capacitor
12 nH, Coilcraft
390
Ω,
1/2 W Chip Resistors (2010)
1 kΩ, 1/2 W Chip Resistor (2010)
Arlon GX - 0300- 55, 30 mils,
ε
r
= 2.55
Description
MRF373ALR1 MRF373ALSR1
Freescale Semiconductor
RF Product Device Data
3
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
TYPICAL CHARACTERISTICS
20
I
DQ
= 500 mA
400 mA
300 mA
200 mA
17
100 mA
16
15
1
10
P
out
, OUTPUT POWER (WATTS) CW
100
V
DD
= 32 Vdc
f = 860 MHz
19
G ps , POWER GAIN (dB)
18
Figure 2. Power Gain versus Output Power
30
V
DD
= 32 Vdc
P
out
= 75 W (CW)
I
DQ
= 200 mA
η
62
25
60
IRL
η
, DRAIN EFFICIENCY (%)
20
G
ps
58
15
56
10
54
5
800
820
840
860
880
900
52
920
f, FREQUENCY (MHz)
Figure 3. Performance in Narrowband Circuit
200
C oss , C iss , CAPACITANCE (pF)
20
150
15
100
C
iss
10
50
C
oss
C
rss
5
0
0
10
20
30
40
50
V
DS
, DRAIN SOURCE VOLTAGE (VOLTS)
0
60
Figure 4. Capacitance versus Voltage
MRF373ALR1 MRF373ALSR1
4
Freescale Semiconductor
RF Product Device Data
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
G ps , POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
C rss , CAPACITANCE (pF)
Z
o
= 2
Ω
Z
load
Z
source
f = 875 MHz
f = 845 MHz
f = 875 MHz
f = 845 MHz
V
DD
= 32 V, I
DQ
= 200 mA, P
out
= 75 W CW
f
MHz
845
860
875
Z
source
Ω
0.58 - j0.29
0.56 - j0.11
0.56 + j0.06
Z
load
Ω
1.60 + j0.07
1.65 + j0.22
1.79 + j0.38
Z
source
= Test circuit impedance as measured from
gate to ground.
Z
load
= Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Z
source
Z
load
Figure 5. Series Equivalent Source and Load Impedance
MRF373ALR1 MRF373ALSR1
Freescale Semiconductor
RF Product Device Data
5
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
NXP MCU
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