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RN1305TE85LF: 产品描述Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 2.2K x 47Kohms; 产品类别半导体分立半导体; 文件大小456KB，共8页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/

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RN1305TE85LF概述

Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 2.2K x 47Kohms

RN1305TE85LF规格参数

参数名称	属性值
Product Attribute	Attribute Value
制造商 Manufacturer	Toshiba(东芝)
产品种类 Product Category	Bipolar Transistors - Pre-Biased
RoHS	Details
Configuration	Single
Transistor Polarity	NPN
Typical Input Resistor	2.2 kOhms
Typical Resistor Ratio	1
安装风格 Mounting Style	SMD/SMT
封装 / 箱体 Package / Case	USM-3
DC Collector/Base Gain hfe Min	80
Collector- Emitter Voltage VCEO Max	50 V
Continuous Collector Current	100 mA
Peak DC Collector Current	100 mA
Pd-功率耗散 Pd - Power Dissipation	100 mW
最小工作温度 Minimum Operating Temperature	- 55 C
最大工作温度 Maximum Operating Temperature	+ 150 C
系列 Packaging	Reel
DC Current Gain hFE Max	80
高度 Height	0.9 mm
长度 Length	2 mm
宽度 Width	1.25 mm
NumOfPackaging	1
工厂包装数量 Factory Pack Quantity	3000

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RN1301~RN1306

TOSHIBA Transistor

Silicon NPN Epitaxial Type (PCT Process)

RN1301,RN1302,RN1303

RN1304,RN1305,RN1306

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

With built-in bias resistors.

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Complementary to RN2301 to RN2306

Unit: mm

Equivalent Circuit and Bias Resistor Values

Type No.

RN1301

RN1302

RN1303

RN1304

RN1305

RN1306

R1 (kΩ)

4.7

2.2

4.7

R2 (kΩ)

4.7

USM

JEDEC

JEITA

TOSHIBA

Weight: 6 mg (typ.)

―

SC-70

2-2E1A

Absolute Maximum Ratings

(Ta = 25°C)

Characteristic

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN1301 to 1306

RN1301 to 1304

RN1305, 1306

Symbol

CBO

CEO

EBO

stg

Rating

100

150

−55

to 150

Unit

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2010-04-06

RN1305TE85LF相似产品对比

	RN1305TE85LF	RN1302TE85LF
描述	Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 2.2K x 47Kohms	Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 10K x 10Kohms
Product Attribute	Attribute Value	Attribute Value
制造商 Manufacturer	Toshiba(东芝)	Toshiba(东芝)
产品种类 Product Category	Bipolar Transistors - Pre-Biased	Bipolar Transistors - Pre-Biased
RoHS	Details	Details
Configuration	Single	Single
Transistor Polarity	NPN	NPN
Typical Input Resistor	2.2 kOhms	10 kOhms
Typical Resistor Ratio	1	1
安装风格 Mounting Style	SMD/SMT	SMD/SMT
封装 / 箱体 Package / Case	USM-3	VESM-3
DC Collector/Base Gain hfe Min	80	50
Collector- Emitter Voltage VCEO Max	50 V	50 V
Continuous Collector Current	100 mA	100 mA
Peak DC Collector Current	100 mA	100 mA
Pd-功率耗散 Pd - Power Dissipation	100 mW	100 mW
最小工作温度 Minimum Operating Temperature	- 55 C	- 55 C
最大工作温度 Maximum Operating Temperature	+ 150 C	+ 150 C
系列 Packaging	Reel	Reel
高度 Height	0.9 mm	0.9 mm
长度 Length	2 mm	2 mm
宽度 Width	1.25 mm	1.25 mm
工厂包装数量 Factory Pack Quantity	3000	3000

RN1305TE85LF

RN1305TE85LF在线购买

RN1305TE85LF概述

RN1305TE85LF规格参数

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RN1305TE85LF相似产品对比

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