19-2489; Rev 1; 9/02
825MHz to 915MHz, SiGe High-Linearity
Active Mixer
General Description
The MAX9982 fully integrated SiGe mixer is optimized to
meet the demanding requirements of GSM850, GSM900,
and CDMA850 base-station receivers. Each high-lineari-
ty device includes a local oscillator (LO) switch, LO dri-
ver, and active mixer. On-chip baluns are also integrated
to allow for single-ended RF and LO inputs. Since the
active mixer provides 2dB of conversion gain, the device
effectively replaces the IF amplifier stage, which typically
follows most passive mixer implementations.
The MAX9982 provides exceptional linearity with an
input IP3 of greater than +26dBm. The integrated LO
driver allows for a wide range of LO drive levels from
-5dBm to +5dBm. In addition, the built-in switch
enables rapid LO selection of less than 250ns, as need-
ed for GSM frequency-hopping applications.
The MAX9982 is available in a 20-pin QFN package
(5mm
✕
5mm) with an exposed paddle and is specified
over the -40°C to +85°C extended temperature range.
o
+26.8dBm Input IP3
o
+13dBm Input 1dB Compression Point
o
825MHz to 915MHz RF Frequency Range
o
70MHz to 170MHz IF Frequency Range
o
725MHz to 1085MHz LO Frequency Range
o
2dB Conversion Gain
o
12dB Noise Figure
o
-5dBm to +5dBm LO Drive
o
5V Single-Supply Operation
o
Built-In LO Switch
o
ESD Protection
o
Internal RF and LO Baluns for Single-Ended Inputs
Features
MAX9982
Applications
GSM850/GSM900 2G and 2.5G EDGE Base
Station Receivers
Cellular
Station Receivers
cdmaOne
TM
and
cdma2000
TM
Base
PART
MAX9982ETP
Ordering Information
TEMP RANGE
-40°C to +85°C
PIN-PACKAGE
20 QFN-EP* (5mm
×
5mm)
*EP = exposed paddle.
TDMA and Integrated Digital Enhanced
Network (iDEN)
TM
Base Station Receivers
Digital and Spread-Spectrum Communication
Systems
Microwave Links
TOP VIEW
GND
Pin Configuration/
Functional Diagram
GND
17
GND
MAX9982
IF+
19
20
18
IF-
Typical Application Circuit appears at end of data sheet.
cdmaOne is a trademark of CDMA Development Group.
cdma2000 is a trademark of Telecommunications Industry
Association.
iDEN is a trademark of Motorola, Inc.
RF
TAP
GND
RFBIAS
GND
1
2
3
4
5
16
15
14
13
12
11
LO2
GND
GND
GND
LO1
LOSEL
GND
GND
V
CC
QFN
________________________________________________________________
Maxim Integrated Products
V
CC
10
6
7
8
9
1
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at
1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
825MHz to 915MHz, SiGe High-Linearity
Active Mixer
MAX9982
ABSOLUTE MAXIMUM RATINGS
V
CC
........................................................................-0.3V to +5.5V
IF+, IF-, RFBIAS, LOSEL.............................-0.3V to (V
CC
+ 0.3V)
TAP .....................................................................................+5.0V
RFBIAS Current.....................................................................5mA
RF, LO1, LO2 Input Power .............................................+20dBm
Continuous Power Dissipation (T
A
= +70°C)
20-Pin QFN (derate 20.8mW/°C above T
A
= +70°C) ....1.66W
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
(Typical
Application Circuit,
V
CC
= 4.75V to 5.25V, no RF signals applied, all RF inputs and outputs terminated with 50Ω, T
A
=
-40°C to +85°C, unless otherwise noted. Typical values are at V
CC
= 5V, T
A
= +25°C, unless otherwise noted.)
PARAMETER
Supply Voltage
Supply Current
Input High Voltage
Input Low Voltage
LOSEL Input Current
SYMBOL
V
CC
I
CC
V
IH
V
IL
I
LOSEL
-5
CONDITIONS
MIN
4.75
138
3.5
TYP
5.00
168
MAX
5.25
193
V
CC
+
0.3V
0.4
+5
UNITS
V
mA
V
V
µA
AC ELECTRICAL CHARACTERISTICS
(Typical
Application Circuit,
V
CC
= 4.75V to 5.25V, P
LO
= -5dBm to +5dBm, f
RF
= 825MHz to 915MHz, f
LO
= 725MHz to 1085MHz,
T
A
= -40°C to +85°C, unless otherwise noted. Typical values at V
CC
= +5.0V, P
RF
= -5dBm, P
LO
= 0dBm, f
RF
= 870MHz, f
LO
=
770MHz, T
A
= +25°C, unless otherwise noted.) (Notes 1, 2)
PARAMETER
RF Frequency
LO Frequency
IF Frequency
LO Drive Level
SYMBOL
f
RF
f
LO
f
IF
P
LO
V
CC
= +5.0V,
f
IF
= 100MHz,
low-side injection,
P
RF
= 0dBm,
P
LO
= -5dBm
Cellular band,
f
RF
= 825MHz to
850MHz
GSM band,
f
RF
= 880MHz to
915MHz
Must meet RF and LO frequency range; IF
matching components affect IF frequency
range
CONDITIONS
MIN
825
725
70
-5
2.6
dB
2.1
-0.0135
±0.6
dB/°C
dB
TYP
MAX
915
1085
170
+5
UNITS
MHz
MHz
MHz
dBm
Conversion Gain (Note 3)
G
C
Gain Variation Over Temperature
Gain Variation from Nominal
T
A
= -40°C to +85°C
f
RF
= 825MHz to 915MHz, 3σ
2
_______________________________________________________________________________________
825MHz to 915MHz, SiGe High-Linearity
Active Mixer
MAX9982
AC ELECTRICAL CHARACTERISTICS (continued)
(Typical
Application Circuit,
V
CC
= 4.75V to 5.25V, P
LO
= -5dBm to +5dBm, f
RF
= 825MHz to 915MHz, f
LO
= 725MHz to 1085MHz,
T
A
= -40°C to +85°C, unless otherwise noted. Typical values at V
CC
= +5.0V, P
RF
= -5dBm, P
LO
= 0dBm, f
RF
= 870MHz, f
LO
=
770MHz, T
A
= +25°C, unless otherwise noted.) (Notes 1, 2)
PARAMETER
Conversion Loss from LO to IF
SYMBOL
CONDITIONS
Inject P
IN
= -20dBm at f
LO
+ 100MHz into
LO port; measure 100MHz at IF port as
P
OUT
; no RF signal at RF port
NF
P
1dB
IIP3
∆IIP3
Cellular band, f
RF
= 825MHz to 850MHz
GSM band, f
RF
= 880MHz to 915MHz
Low-side injection
High-side injection
V
CC
= +5.0V, P
RF
= 0dBm, P
LO
= -5dBm,
T
A
= +25°C (Notes 3, 4)
T
A
= -40°C to +85°C
f
RF
= 915,
f
LO
= 815MHz,
f
SPUR
= 865MHz,
P
RF
= -5dBm
f
RF
= 915,
f
LO
= 815MHz,
f
SPUR
= 848.3MHz,
P
RF
= -5dBm
P
LO
= +5dBm
P
LO
= 0dBm
P
LO
= +5dBm
P
LO
= 0dBm
MIN
TYP
47
11.3
11.8
12.9
14.5
26.8
±0.5
65
dBc
57
89
dBc
89
-40
-28
11
51
250
19
LO port active
LO port inactive
RF and LO terminated (Note 6)
20
12
15
dBm
dBm
dB
dB
ns
dB
dB
dB
MAX
UNITS
dB
Noise Figure
Input 1dB Compression Point
Input Third-Order Intercept Point
Input Third-Order Intercept Point
Variation Over Temperature
dB
dBm
dBm
dB
2 RF - 2 LO Spur Rejection
2
×
2
3 RF - 3 LO Spur Rejection
3
×
3
Maximum LO Leakage at RF Port
Maximum LO Leakage at IF Port
Minimum RF to IF Isolation
LO1 to LO2 Isolation
LO Switching Time
RF Return Loss
LO Return Loss
IF Return Loss
P
LO
= -5dBm to +5dBm,
f
LO
= 725MHz to 1085MHz
P
LO
= -5dBm to +5dBm,
f
LO
= 725MHz to 1085MHz
P
LO
= -5dBm to +5dBm,
f
RF
= 825MHz to 915MHz
f
RF
= 825MHz to 915MHz, P
LO1
= P
LO2
=
+5dBm, f
IF
= 100MHz (Note 5)
50% of LOSEL to IF settled within 2°
Note 1:
Note 2:
Note 3:
Note 4:
Note 5:
Note 6:
Guaranteed by design and characterization.
All limits reflect losses of external components. Output measurements taken at IF OUT of
Typical Application Circuit.
Production tested.
Two tones at 1MHz spacing, 0dBm each at RF port.
Measured at IF port at IF frequency. LO1 and LO2 are offset by 1MHz.
IF return loss can be optimized by external matching components.
_______________________________________________________________________________________
3
825MHz to 915MHz, SiGe High-Linearity
Active Mixer
MAX9982
Typical Operating Characteristics
(Typical
Application Circuit,
V
CC
= 5V, f
IF
= 100MHz, P
RF
= -5dBm, P
LO
= 0dBm, T
A
= +25°C, unless otherwise noted.)
CONVERSION GAIN vs. RF FREQUENCY
LOW-SIDE INJECTION
MAX9982toc01
MAX9982toc02
BIAS CURRENT vs. TEMPERATURE
180
175
BIAS CURRENT (mA)
170
165
160
155
150
-40
-15
10
35
60
85
TEMPERATURE (°C)
V
CC
= 5V
V
CC
= 4.75V
V
CC
= 5.25V
4.0
CONVERSION GAIN vs. RF FREQUENCY
HIGH-SIDE INJECTION
f
IF
= 120MHz
3.0
CONVERSION GAIN (dB)
2.5
2.0
1.5
1.0
0.5
T
A
= +25°C
T
A
= +85°C
T
A
= -40°C
MAX9982toc03
3.5
f
IF
= 100MHz
3.5
CONVERSION GAIN (dB)
3.0
2.5
T
A
= +25°C
2.0
1.5
1.0
820
840
860
880
900
T
A
= -40°C
T
A
= +85°C
920
820
840
860
880
900
920
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
CONVERSION GAIN vs. RF FREQUENCY
LOW-SIDE INJECTION
f
IF
= 100MHz
2.8
CONVERSION GAIN (dB)
2.6
2.4
P
LO
= -5dBm, 0dBm, +5dBm
2.2
2.0
1.8
820
840
860
880
900
920
RF FREQUENCY (MHz)
MAX9982toc04
CONVERSION GAIN vs. RF FREQUENCY
HIGH-SIDE INJECTION
MAX9982toc05
CONVERSION GAIN vs. RF FREQUENCY
LOW-SIDE INJECTION
f
IF
= 100MHz
2.8
CONVERSION GAIN (dB)
V
CC
= 4.75V
2.6
2.4
2.2
2.0
1.8
V
CC
= 5.25V
V
CC
= 5V
MAX9982toc06
3.0
2.6
f
IF
= 120MHz
2.4
CONVERSION GAIN (dB)
3.0
2.2
2.0
P
LO
= -5dBm, 0dBm, +5dBm
1.8
1.6
820
840
860
880
900
920
RF FREQUENCY (MHz)
820
840
860
880
900
920
RF FREQUENCY (MHz)
2 RF - 2 LO vs. RF FREQUENCY
LOW-SIDE INJECTION
MAX9982 toc07
2 LO - 2 RF RESPONSE vs. RF FREQUENCY
HIGH-SIDE INJECTION
MAX9982 toc08
2 RF - 2 LO RESPONSE vs. RF FREQUENCY
LOW-SIDE INJECTION
P
RF
= -5dBm
f
IF
= 100MHz
MAX9982 toc09
80
P
RF
= -5dBm
P
LO
= +5dBm
f
IF
= 100MHz
T
A
= -40°C
70
58
P
RF
= -5dBm
P
LO
= +5dBm
f
IF
= 120MHz
56
T
A
= +85°C
54
T
A
= +25°C
52
T
A
= -40°C
75
70
65
60
55
50
45
P
LO
= 0dBm
P
LO
= +5dBm
2 RF - 2 LO RESPONSE (dBc)
2 LO - 2 RF RESPONSE (dBc)
65
T
A
= +25°C
60
T
A
= +85°C
55
820
840
860
880
900
920
RF FREQUENCY (MHz)
2 RF - 2 LO RESPONSE (dBc)
75
P
LO
= -5dBm
50
820
840
860
880
900
920
RF FREQUENCY (MHz)
820
840
860
880
900
920
RF FREQUENCY (MHz)
4
_______________________________________________________________________________________
825MHz to 915MHz, SiGe High-Linearity
Active Mixer
MAX9982
Typical Operating Characteristics (continued)
(Typical
Application Circuit,
V
CC
= 5V, f
IF
= 100MHz, P
RF
= -5dBm, P
LO
= 0dBm, T
A
= +25°C, unless otherwise noted.)
2 LO - 2 RF RESPONSE vs. RF FREQUENCY
HIGH-SIDE INJECTION
MAX9982 toc10
INPUT IP3 vs. RF FREQUENCY
LOW-SIDE INJECTION
MAX9982 toc11
INPUT IP3 vs. RF FREQUENCY
HIGH-SIDE INJECTION
f
IF
= 120MHz
31
30
INPUT IP3 (dBm)
29
T
A
= +25°C
28
27
T
A
= +85°C
26
T
A
= -40°C
MAX9982 toc12
60.0
57.5
55.0
52.5
P
LO
= +5dBm
50.0
P
LO
= -5dBm
47.5
45.0
820
840
860
880
900
P
RF
= -5dBm
f
IF
= 120MHz
P
LO
= 0dBm
29
f
IF
= 100MHz
28
INPUT IP3 (dBm)
T
A
= +85°C
32
2 LO - 2 RF RESPONSE (dBc)
27
T
A
= -40°C
26
T
A
= +25°C
25
920
820
840
860
880
900
920
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
25
820
840
860
880
900
920
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
LOW-SIDE INJECTION
MAX9982 toc13
INPUT IP3 vs. RF FREQUENCY
HIGH-SIDE INJECTION
MAX9982 toc14
INPUT IP3 vs. RF FREQUENCY
LOW-SIDE INJECTION
f
IF
= 100MHz
27.5
INPUT IP3 (dBm)
V
CC
= 5.25V
MAX9982 toc15
28.0
f
IF
= 100MHz
P
LO
= 0dBm
INPUT IP3 (dBm)
27.5
P
LO
= -5dBm
30
P
LO
= -5dBm
29
P
LO
= 0dBm
INPUT IP3 (dBm)
28
P
LO
= +5dBm
f
IF
= 120MHz
28.0
27.0
27.0
P
LO
= +5dBm
27
26
26.5
V
CC
= 4.75V
26.0
820
840
860
880
900
920
820
840
860
V
CC
= 5.0V
26.5
820
840
860
880
900
920
RF FREQUENCY (MHz)
25
RF FREQUENCY (MHz)
880
900
920
RF FREQUENCY (MHz)
INPUT P1dB vs. RF FREQUENCY
LOW-SIDE INJECTION
MAX9982 toc16
INPUT P1dB vs. RF FREQUENCY
HIGH-SIDE INJECTION
MAX9982 toc17
INPUT P1dB vs. RF FREQUENCY
LOW-SIDE INJECTION
f
IF
= 100MHz
13.25
MAX9982 toc18
14.0
f
IF
= 100MHz
13.5
INPUT P1dB (dBm)
16.0
f
IF
= 120MHz
15.5
INPUT P1dB (dBm)
15.0
14.5
T
A
= +25°C
14.0
T
A
= -40°C
13.5
T
A
= +85°C
13.50
INPUT P1dB (dBm)
T
A
= +85°C
13.0
P
LO
= -5dBm
13.00
12.5
T
A
= -40°C
T
A
= +25°C
12.75
P
LO
= +5dBm
12.50
P
LO
= 0dBm
12.0
820
840
860
880
900
920
RF FREQUENCY (MHz)
13.0
820
840
860
880
900
920
RF FREQUENCY (MHz)
820
840
860
880
900
920
RF FREQUENCY (MHz)
_______________________________________________________________________________________
5
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