The SGA2463Z is a high performance SiGe HBT MMIC Amplifier. A Darling-
ton configuration featuring one-micron emitters provides high F
T
and
excellent thermal performance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions. Cancellation of
emitter junction non-linearities results in higher suppression of intermodu-
lation products. Only two DC-blocking capacitors, a bias resistor, and an
optional RF choke are required for operation.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
Gain (dB)
18
IRL
12
ORL
6
0
0
1
24
GAIN
Features
Gain & Return Loss vs. Freq. @T
L
=+25°C
0
-10
-20
-30
-40
5
ES
Return Loss (dB)
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
FO
Parameter
Small Signal Gain
Output Power at 1dB Compression
Output Third Intercept Point
R
Min.
18.0
Specification
Typ.
20.0
17.1
8.0
7.2
20.1
18.0
5000
N
2
3
Frequency (GHz)
EW
4
SiGe HBT
D
Max.
22.0
Unit
dB
dB
dBm
dBm
dBm
dBm
MHz
850MHz
1950MHz
850MHz
1950MHz
850MHz
1950MHz
IG
N
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Bandwidth Determined by Return
Loss (>10dB)
Input Return Loss
11.1
dB
1950MHz
Output Return Loss
23.1
dB
1950MHz
Noise Figure
3.0
dB
1950MHz
Device Operating Voltage
2.4
2.7
3.0
V
Device Operating Current
17
20
23
mA
Thermal Resistance
255
°C/W
(Junction - Lead)
Test Conditions: V
S
=5V, I
D
=20mA Typ., OIP
3
Tone Spacing=1MHz, P
OUT
per tone=-5dBm, R
BIAS
=120, T
L
=25°C, Z
S
=Z
L
=50
DS20151109
N
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-