IRLTS2242PbF
HEXFET
®
Power MOSFET
V
DSS
V
GS
R
DS(on)
max
(@ V
GS
= -4.5V)
R
DS(on)
max
(@ V
GS
= -2.5V)
Q
g (typical)
I
D
(@T
A
= 25°C)
-20
±
12
32
55
12
-6.9
V
V
m
m
nC
A
D
D
1
6
A
D
2
5
D
G
3
4
S
Top View
TSOP-6
Applications
Battery operated DC motor inverter MOSFET
System/Load Switch
Features
Industry-Standard TSOP-6 Package
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
Benefits
results in Multi-Vendor Compatibility
Environmentally Friendlier
Increased Reliability
Base part number
IRLTS2242TRPbF
Absolute Maximum Ratings
Package Type
TSOP-6
Standard Pack
Form
Quantity
Tape and Reel
3000
Orderable Part Number
IRLTS2242TRPbF
Units
V
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
- 20
± 12
-6.9
-5.5
-55
2.0
1.3
0.02
-55 to + 150
A
W
W/°C
°C
Notes
through
are on page 2
1
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November 18, 2014
IRLTS2242PbF
Min.
-20
–––
–––
–––
-0.4
–––
–––
–––
–––
–––
8.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
9.4
26
45
–––
-3.8
–––
–––
–––
–––
–––
12
1.5
4.3
17
5.8
18
81
68
905
280
200
Conditions
V
GS
= 0V, I
D
= -250µA
Reference to 25°C, I
D
= -1mA
V
GS
= -4.5V, I
D
= -6.9A
V
GS
= -2.5V, I
D
= -5.5A
V
DS
= V
GS
, I
D
= -10µA
V
DS
= -16V, V
GS
= 0V
V
DS
= -16V, V
GS
= 0V,T
J
= 125°C
V
GS
= -12V
V
GS
= 12V
V
DS
= -10V, I
D
= -5.5A
V
DS
= -10V
V
GS
= -4.5V
I
D
= -5.5A
V
DD
= -10V, V
GS
= -4.5V
I
D
= -5.5A
R
G
= 6.8
V
GS
= 0V
V
DS
= -10V
ƒ = 1.0KHz
Max. Units
–––
V
––– mV/°C
32
m
55
-1.1
V
––– mV/°C
-1.0
µA
-150
-100
nA
100
–––
S
–––
nC
–––
–––
–––
ns
–––
–––
–––
–––
pF
–––
–––
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
Drain-to-Source Breakdown Voltage
BV
DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs
Q
gd
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Characteristics
Parameter
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
Thermal Resistance
Parameter
R
JA
Junction-to-Ambient
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
41
16
Max.
-2.0
Units
A
-55
-1.2
62
24
Typ.
–––
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -5.5A, V
GS
=0V
T
J
= 25°C, I
F
= -5.5A, V
DD
= -16V
di/dt = 100A/µs
D
G
S
Max.
62.5
Units
°C/W
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse
width
400µs; duty cycle
2%.
When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
2
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© 2014 International Rectifier
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November 18, 2014
100
TOP
VGS
-10V
-4.50V
-2.50V
-2.25V
-2.00V
-1.80V
-1.55V
-1.40V
IRLTS2242PbF
100
TOP
VGS
-10V
-4.50V
-2.50V
-2.25V
-2.00V
-1.80V
-1.55V
-1.40V
-ID, Drain-to-Source Current (A)
-ID, Drain-to-Source Current (A)
10
BOTTOM
10
BOTTOM
1
-1.40V
1
-1.40V
60µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
-V DS, Drain-to-Source Voltage (V)
60µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
-V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
1.4
ID = -6.9A
1.2
VGS = -4.5V
-I D, Drain-to-Source Current (A)
10
T J = 150°C
T J = 25°C
VDS = -10V
60µs
PULSE WIDTH
1.0
0
1
2
3
4
5
1.0
0.8
0.6
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
-V GS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
ID= -5.5A
-V GS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
VDS= -16V
VDS= -10V
C, Capacitance (pF)
VDS= -4.0V
1000
Ciss
Coss
Crss
100
1
10
-V DS, Drain-to-Source Voltage (V)
100
0
5
10
15
20
25
30
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
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Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
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November 18, 2014
100
IRLTS2242PbF
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100µsec
1msec
10msec
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
DC
-I SD, Reverse Drain Current (A)
10
T J = 150°C
T J = 25°C
ID, Drain-to-Source Current (A)
10
1
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-V SD, Source-to-Drain Voltage (V)
0.01
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
8
-V GS(th) , Gate threshold Voltage (V)
Fig 8.
Maximum Safe Operating Area
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
ID = -10µA
ID = -250µA
ID = -10mA
-75 -50 -25
-I D, Drain Current (A)
6
4
2
ID = -1.0mA
0
25
50
75
100
125
150
T A , Ambient Temperature (°C)
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs. Case Temperature
100
D = 0.50
Thermal Response ( Z thJA ) °C/W
Fig 10.
Threshold Voltage vs. Temperature
10
0.20
0.10
0.05
0.02
0.01
1
0.1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + TA
0.001
0.01
0.1
1
10
100
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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November 18, 2014
RDS(on), Drain-to -Source On Resistance (
m
)
IRLTS2242PbF
)
RDS(on), Drain-to -Source On Resistance (m
70
ID = -6.9A
450
400
350
300
250
200
150
100
50
0
0
10
20
30
40
50
60
-I D, Drain Current (A)
Vgs = -4.5V
Vgs = -2.5V
60
50
40
30
20
10
0
0
2
4
6
8
10
12
TJ = 25°C
TJ = 125°C
-VGS, Gate -to -Source Voltage (V)
Fig 12.
On–Resistance vs. Gate Voltage
120
Fig 13.
Typical On–Resistance vs. Drain Current
16000
14000
12000
Power (W)
EAS , Single Pulse Avalanche Energy (mJ)
100
80
ID
TOP
-1.3A
-2.0A
BOTTOM -5.5A
10000
8000
6000
4000
60
40
20
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
2000
0
1E-8
1E-7
1E-6
1E-5
1E-4
1E-3
Time (sec)
Fig 14.
Maximum Avalanche Energy vs. Drain Current
Fig 15.
Typical Power vs. Time
Fig 16.
Diode Reverse Recovery Test Circuit for P-Channel HEXFET
®
Power MOSFETs
5
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November 18, 2014
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