SKW25N120
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled
Diode
40lower
E
off
compared to previous generation
Short circuit withstand time – 10
s
Designed for:
- Motor controls
- Inverter
G
- SMPS
NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
Pb-free lead plating; RoHS compliant
1
Qualified according to JEDEC for target applications
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
C
E
PG-TO-247-3
Type
SKW25N120
V
CE
1200V
I
C
25A
E
off
2.9mJ
T
j
150C
Marking
K25N120
Package
PG-TO-247-3
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
C
= 25C
T
C
= 100C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
1200V,
T
j
150C
Diode forward current
T
C
= 25C
T
C
= 100C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
Short circuit withstand time
Power dissipation
T
C
= 25C
Operating junction and storage temperature
Soldering temperature,
wavesoldering, 1.6mm (0.063 in.) from case for 10s
T
j
,
T
stg
T
s
-55...+150
260
C
2
Symbol
V
CE
I
C
Value
1200
46
25
Unit
V
A
I
Cpul s
-
I
F
84
84
42
25
I
Fpul s
V
GE
t
SC
P
tot
80
20
10
313
V
s
W
V
GE
= 15V, 100VV
CC
1200V,
T
j
150C
1
2
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2_3
12.06.2013
IFAG IPC TD VLS
SKW25N120
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
R
thJA
40
R
thJCD
1.15
R
thJC
0.4
K/W
Symbol
Conditions
Max. Value
Unit
Electrical Characteristic,
at
T
j
= 25
C,
unless otherwise specified
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V
( B R ) C E S
V
G E
= 0V ,
I
C
= 15 0 0
A
V
CE(sat)
V
G E
= 15 V ,
I
C
= 25 A
T
j
=2 5
C
T
j
=1 5 0 C
Diode forward voltage
V
F
V
G E
= 0V ,
I
F
= 2 5 A
T
j
=2 5
C
T
j
=1 5 0 C
Gate-emitter threshold voltage
Zero gate voltage collector current
.
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
Measured 5mm (0.197 in.) from case
Short circuit collector current
1)
Symbol
Conditions
Value
min.
1200
typ.
-
max.
-
Unit
V
2.5
-
3.1
3.7
2.0
3.6
4.3
2.5
5
A
-
3
1.75
4
V
GE(th)
I
CES
I
C
= 10 0 0
A
,
V
CE
=
V
GE
V
C E
=1200V,V
G E
=0V
T
j
=2 5
C
T
j
=1 5 0 C
-
-
-
-
-
-
20
350
1400
100
-
2600
310
130
300
-
-
nC
nH
A
nA
S
pF
I
GES
g
fs
C
iss
C
oss
C
rss
Q
Gate
L
E
I
C(SC)
V
C E
=0V,V
G E
=20V
V
C E
= 20 V ,
I
C
= 25 A
V
C E
= 25 V ,
V
G E
= 0V ,
f=
1 MH z
V
C C
= 96 0 V,
I
C
=2 5 A
V
G E
= 15 V
-
-
-
-
-
2150
260
110
225
13
240
V
G E
= 15 V ,t
S C
10
s
10 0 V
V
C C
12 0 0 V,
T
j
1 5 0 C
-
1)
Allowed number of short circuits: <1000; time between short circuits: >1s
2
Rev. 2_3
12.06.2013
IFAG IPC TD VLS
SKW25N120
Switching Characteristic, Inductive Load,
at
T
j
=25
C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
rr
t
S
t
F
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
F
Q
rr
I
rrm
d i
r r
/d t
T
j
=2 5
C
,
V
R
= 8 00 V ,
I
F
= 2 5 A,
d i
F
/ d t
=6 5 0 A/
s
-
-
-
-
-
-
1.0
20
470
C
A
A/s
90
ns
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=2 5
C
,
V
C C
= 80 0 V,
I
C
= 2 5 A,
V
G E
= 15 /0 V ,
R
G
= 22
,
1)
L
=1 8 0n H,
1)
C
= 4 0p F
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
45
40
730
30
2.2
1.5
3.7
60
52
950
39
2.9
2.0
4.9
mJ
ns
Symbol
Conditions
Value
Min.
typ.
max.
Unit
Switching Characteristic, Inductive Load,
at
T
j
=150
C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
rr
t
S
t
F
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
F
1)
Symbol
Conditions
Value
Min.
-
-
-
-
-
-
-
typ.
50
36
820
42
3.8
2.9
6.7
max.
60
43
990
50
4.6
3.8
8.4
Unit
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=1 5 0 C
V
C C
= 80 0 V,
I
C
= 2 5 A,
V
G E
= 15 /0 V ,
R
G
= 22
,
1)
L
=1 8 0n H,
1)
C
= 4 0p F
Energy losses include
“tail” and diode
reverse recovery.
T
j
=1 5 0 C
V
R
= 8 00 V ,
I
F
= 2 5 A,
d i
F
/ d t
=7 5 0 A/
s
ns
mJ
-
-
-
-
-
-
280
ns
Q
rr
I
rrm
d i
r r
/d t
4.3
32
130
C
A
A/s
Leakage inductance L
and stray capacity C
due to dynamic test circuit in figure E.
IFAG IPC TD VLS
3
Rev. 2_3
12.06.2013
SKW25N120
100A
I
c
100A
t
p
=1
s
15
s
I
C
,
COLLECTOR CURRENT
I
C
,
COLLECTOR CURRENT
80A
50
s
10A
200
s
1ms
1A
60A
T
C
=80°C
40A
T
C
=110°C
20A
DC
0.1A
I
c
0A
10Hz
100Hz
1kHz
10kHz
100kHz
1V
10V
100V
1000V
f,
SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(T
j
150C,
D =
0.5,
V
CE
= 800V,
V
GE
= +15V/0V,
R
G
= 22)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 2. Safe operating area
(D
=
0,
T
C
= 25C,
T
j
150C)
350W
300W
250W
200W
150W
100W
50W
0W
25°C
60A
50A
P
tot
,
POWER DISSIPATION
I
C
,
COLLECTOR CURRENT
40A
30A
20A
10A
50°C
75°C
100°C
125°C
0A
25°C
50°C
75°C
100°C
125°C
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(T
j
150C)
T
C
,
CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(V
GE
15V,
T
j
150C)
IFAG IPC TD VLS
4
Rev. 2_3
12.06.2013
SKW25N120
80A
70A
60A
80A
70A
60A
I
C
,
COLLECTOR CURRENT
50A
40A
30A
20A
10A
0A
0V
15V
13V
11V
9V
7V
I
C
,
COLLECTOR CURRENT
V
G E
=17V
V
G E
=17V
15V
13V
50A
40A
30A
20A
10A
0A
0V
11V
9V
7V
1V
2V
3V
4V
5V
6V
7V
1V
2V
3V
4V
5V
6V
7V
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 5. Typical output characteristics
(T
j
= 25C)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 6. Typical output characteristics
(T
j
= 150C)
70A
60A
V
CE(sat)
,
COLLECTOR
-
EMITTER SATURATION VOLTAGE
80A
6V
5V
I
C
=50A
4V
I
C
=25A
I
C
,
COLLECTOR CURRENT
50A
T
j
=+150°C
40A
30A
20A
10A
0A
3V
T
j
=+25°C
T
j
=-40°C
3V
I
C
=12.5A
2V
1V
4V
5V
6V
7V
8V
9V
10V 11V
0V
-50°C
0°C
50°C
100°C
150°C
V
GE
,
GATE
-
EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(V
CE
= 20V)
T
j
,
JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V
GE
= 15V)
IFAG IPC TD VLS
5
Rev. 2_3
12.06.2013
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