Bipolar Transistors - BJT NPN Epitaxial Transistor
参数名称 | 属性值 |
Product Attribute | Attribute Value |
制造商 Manufacturer | Fairchild |
产品种类 Product Category | Bipolar Transistors - BJT |
RoHS | N |
安装风格 Mounting Style | Through Hole |
封装 / 箱体 Package / Case | TO-92-3 |
Transistor Polarity | NPN |
Configuration | Single |
Collector- Emitter Voltage VCEO Max | 15 V |
Collector- Base Voltage VCBO | 30 V |
Emitter- Base Voltage VEBO | 5 V |
Maximum DC Collector Current | 0.05 A |
Gain Bandwidth Product fT | 1.1 GHz |
最小工作温度 Minimum Operating Temperature | - 55 C |
最大工作温度 Maximum Operating Temperature | + 150 C |
DC Current Gain hFE Max | 240 |
高度 Height | 4.58 mm |
长度 Length | 4.58 mm |
系列 Packaging | Ammo Pack |
宽度 Width | 3.86 mm |
Continuous Collector Current | 0.05 A |
DC Collector/Base Gain hfe Min | 40 |
NumOfPackaging | 1 |
Pd-功率耗散 Pd - Power Dissipation | 250 mW |
工厂包装数量 Factory Pack Quantity | 30000 |
单位重量 Unit Weight | 0.008466 oz |
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