19-2659; Rev 0; 10/02
KIT
ATION
EVALU
BLE
AVAILA
W-CDMA/N-CDMA Cellular Phone HBT PA
Management ICs
General Description
Features
o
Step-Down Converter
Dynamically Adjustable Output Voltage from
0.75V to 3.4V (MAX1958)
Dynamically Adjustable Output Voltage from
1V to 3.6V (MAX1959)
800mA Guaranteed Output Current
130mV IC Dropout at 600mA Load
Low Quiescent Current
190µA (typ) in Skip Mode (MAX1958)
3mA (typ) in PWM Mode
0.1µA (typ) in Shutdown Mode
1MHz Fixed-Frequency PWM operation
16% to 100% Duty-Cycle Operation
No External Schottky Diode Required
Soft-Start
o
Operational Amplifier
5mA Rail-to-Rail Output
Active Discharge in Shutdown
800kHz Gain-Bandwidth Product
120dB Open-Loop Voltage Gain (R
L
= 100kΩ)
o
Temperature Sensor
Accurate Sensor -11.7mV/°C Slope
-40°C to +125°C-Rated Temperature Range
o
20-Pin Thin QFN (5mm
✕
5mm), 0.8mm Height (max)
MAX1958/MAX1959
The MAX1958/MAX1959 power amplifier (PA) power-
management ICs (PMICs) integrate an 800mA, dynami-
cally adjustable step-down converter, a 5mA Rail-to-
Rail
®
operational amplifier (op amp), and a precision
temperature sensor to power a heterojunction bipolar
transistor (HBT) PA in W-CDMA and N-CDMA cell
phones.
The high-efficiency, pulse-width modulated (PWM), DC-
to-DC buck converter is optimized to provide a guaran-
teed output current of 800mA. The output voltage is
dynamically controlled to produce any fixed-output volt-
age in the range of 0.75V to 3.4V (MAX1958) or 1V to
3.6V (MAX1959), with settling time less than 30µs for a
full-scale change in voltage and current. The 1MHz PWM
switching frequency allows the use of small external
components while pulse-skip mode reduces quiescent
current to 190µA with light loads. The converter utilizes a
low on-resistance internal MOSFET switch and synchro-
nous rectifier to maximize efficiency and minimize
external component count. The 100% duty-cycle opera-
tion allows for an IC dropout voltage of only 130mV (typ)
at 600mA load.
The micropower op amp is used to provide bias to the
HBT PA to maximize efficiency. The amplifier features
active discharge in shutdown for full PA bias control. It
has 5mA rail-to-rail drive capability, 800kHz gain-band-
width product, and 120dB open-loop voltage gain.
The precision temperature sensor measures tempera-
tures between -40°C to +125°C, with linear tempera-
ture-to-voltage analog output characteristics.
The MAX1958/MAX1959 are available in a 20-pin 5mm
✕
5mm thin QFN package (0.8mm max height).
Ordering Information
PART
MAX1958ETP
MAX1959ETP
TEMP RANGE
-40°C to +85°C
-40°C to +85°C
PIN-PACKAGE
20 Thin QFN-EP*
20 Thin QFN-EP
*EP
= Exposed paddle.
Pin Configuration
SHDN1
V
CC
Applications
W-CDMA and N-CDMA Cellular Phones
Wireless PDAs and Modems
TOP VIEW
20
19
18
17
AOUT
SHDN2
AGND
TOUT
REF
1
2
3
4
5
10
6
7
8
9
16
15
14
INP
IN+
IN-
PWM
INP
IN
LX
PGND
MAX1958/
MAX1959
13
12
11
SHDN3
AGND
COMP
Rail-to-Rail is a registered trademark of Nippon Motorola, Ltd.
THIN QFN
5mm x 5mm
________________________________________________________________
Maxim Integrated Products
OUT
ADJ
Typical Operating Circuit and Functional Diagram appear at
end of data sheet.
1
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at
1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
W-CDMA/N-CDMA Cellular Phone HBT PA
Management ICs
MAX1958/MAX1959
ABSOLUTE MAXIMUM RATINGS
IN, INP, OUT, ADJ,
SHDN1, SHDN2,
SHDN3,
PWM, V
CC
to PGND ...................................-0.3V to +6V
AGND to PGND .....................................................-0.3V to +0.3V
COMP, REF to AGND ....................................-0.3 to (V
IN
+ 0.3V)
IN+, IN-, AOUT, TOUT to AGND ................-0.3 to (V
VCC
+ 0.3V)
LX Current (Note 1).............................................................±1.6A
Output Short-Circuit Duration.....................................Continuous
Continuous Power Dissipation (T
A
= +70°C)
20-Pin Thin QFN 5mm x 5mm
(derate 20.8mW/°C above +70°C) .............................1670mW
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Note 1:
LX has internal clamp diodes to PGND and INP. Applications that forward bias these diodes should take care not to exceed
the IC’s package power dissipation limits.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS (STEP-DOWN CONVERTER)
(V
INP
= V
IN
= V
VCC
= V
SHDN1
= 3.6V, V
PWM
= V
PGND
= V
AGND
= V
SHDN2
= V
SHDN3
= 0, V
ADJ
= 1.25V, COMP = IN- = IN+ = AOUT
= TOUT = unconnected, C
REF
= 0.1µF,
T
A
= 0°C to +85°C,
V
OUT
for MAX1958 = 2.2V, V
OUT
for MAX1959 = 1.7V, unless otherwise
noted. Typical values are at T
A
= +25°C.)
PARAMETER
Supply Voltage Range
Undervoltage Lockout Threshold
Quiescent Current
Rising or falling, hysteresis is 1%
MAX1958, PWM = AGND
MAX1959, PWM = AGND
V
PWM
= V
IN
Quiescent Current in Dropout
Shutdown Supply Current
ERROR AMPLIFIER
OUT Voltage Accuracy
(MAX1958)
V
ADJ
= 1.932V, I
LOAD
= 0 to 600mA, V
PWM
= V
IN
= 3.8V
V
ADJ
= 0.426V, I
LOAD
= 0 to 30mA, V
PWM
= 0
V
ADJ
= 0.426V, I
LOAD
= 0 to 30mA, V
PWM
= V
IN
= 4.2V
OUT Voltage Accuracy
(MAX1959)
OUT Input Current (MAX1958)
OUT Input Current (MAX1959)
ADJ Input Current (MAX1958)
ADJ Input Current (MAX1959)
Positive COMP Output Current
(MAX1958)
Positive COMP Output Current
(MAX1959)
V
ADJ
= 2.2V, I
LOAD
= 0 to 600mA, V
PWM
= V
IN
= 4V
V
ADJ
= 0.9V, I
LOAD
= 0 to 30mA, V
PWM
= 0
V
ADJ
= 0.9V, I
LOAD
= 0 to 30mA, V
PWM
= V
IN
= 4.2V
V
OUT
= 0.75V
V
OUT
= 3.4V
V
OUT
= 1V
V
OUT
= 3.6V
V
ADJ
= 0.426V to 1.932V
V
ADJ
= 0.9V to 2.2V
V
ADJ
= 1V, V
OUT
= 1.5V, V
COMP
= 1.25V
V
ADJ
= 1V, V
OUT
= 1V, V
COMP
= 1.25V
3.38
0.739
0.739
3.58
0.985
0.985
2
11
2.5
10
-150
-150
-27
-27
3.40
0.750
0.750
3.60
1.00
1.00
4
17
4.0
16
+1
+1
-14
-14
3.42
0.761
0.761
3.62
1.015
1.015
6
25
6.5
23
+150
+150
-7
-7
µA
µA
nA
nA
µA
µA
V
V
MAX1958
MAX1959
V
SHDN1
= 0
CONDITIONS
MIN
2.6
2.20
2.35
190
280
3
295
330
0.1
550
600
6
TYP
MAX
5.5
2.55
300
450
UNITS
V
V
µA
mA
µA
µA
2
_______________________________________________________________________________________
W-CDMA/N-CDMA Cellular Phone HBT PA
Management ICs
ELECTRICAL CHARACTERISTICS (STEP-DOWN CONVERTER) (continued)
(V
INP
= V
IN
= V
VCC
= V
SHDN1
= 3.6V, V
PWM
= V
PGND
= V
AGND
= V
SHDN2
= V
SHDN3
= 0, V
ADJ
= 1.25V, COMP = IN- = IN+ = AOUT
= TOUT = unconnected, C
REF
= 0.1µF,
T
A
= 0°C to +85°C,
V
OUT
for MAX1958 = 2.2V, V
OUT
for MAX1959 = 1.7V, unless otherwise
noted. Typical values are at T
A
= +25°C.)
PARAMETER
Negative COMP Output Current
(MAX1958)
Negative COMP Output Current
(MAX1959)
REFERENCE
REF Output Voltage
REF Load Regulation
Undervoltage Lockout Threshold
Supply Rejection
CONTROLLER
P-Channel On-Resistance
N-Channel On-Resistance
Current-Sense Transresistance
P-Channel Current-Limit
Threshold
P-Channel Pulse-Skipping
Current Threshold
N-Channel Current-Limit
Threshold
N-Channel Zero-Crossing
Comparator
LX Leakage Current
LX RMS Current
Maximum Duty Cycle
Minimum Duty Cycle
Oscillator Frequency
Thermal-Shutdown Threshold
LOGIC INPUTS (PWM,
SHDN1)
Logic Input High
Logic Input Low
Logic Input Current
2.6 V < V
IN
< 5.5 V
2.6 V < V
IN
< 5.5 V
V
IN
= 5.5V
0.1
1.6
0.6
1
V
V
µA
Hysteresis = +15°C
V
PWM
= 0
V
PWM
= V
IN
= 4.2V
0.85
16
1.00
160
1.15
V
PWM
= 0
V
PWM
= V
IN
V
PWM
= 0
V
IN
= 5.5V
(Note 1)
100
0
-20.0
1.1
0.12
I
LX
= 180mA, V
IN
= 3.6V
I
LX
= 180mA, V
IN
= 2.6V
I
LX
= 180mA, V
IN
= 3.6V
I
LX
= 180mA, V
IN
= 2.6V
0.21
0.25
0.18
0.21
0.5
1.37
0.15
-0.5
20
+0.1
+20.0
1.0
1.6
0.17
0.40
0.5
0.30
0.35
Ω
Ω
V/A
A
A
A
mA
µA
A
%
%
MHz
°C
10µA < I
REF
< 100µA
Rising or falling, 1% hysteresis
2.6V < V
IN
< 5.5V
0.85
1.225
1.250
2.50
1.00
0.07
1.275
6.25
1.10
1.7
V
mV
V
mV/V
CONDITIONS
V
ADJ
= 1V, V
OUT
= 2V, V
COMP
= 1.25V
V
ADJ
= 1V, V
OUT
= 1.4V, V
COMP
= 1.25V
MIN
7
7
TYP
14
14
MAX
27
27
UNITS
µA
µA
MAX1958/MAX1959
_______________________________________________________________________________________
3
W-CDMA/N-CDMA Cellular Phone HBT PA
Management ICs
MAX1958/MAX1959
ELECTRICAL CHARACTERISTICS (OP AMP)
(V
INP
= V
IN
= V
VCC
= V
SHDN2
= 2.7V, V
AOUT
= V
VCC
/2, R
L
=
∞
connected from AOUT to V
VCC
/2, V
PGND
= V
AGND
= V
SHDN1
=
V
SHDN3
= V
PWM
= V
ADJ
= 0, OUT = LX = TOUT = REF = COMP = unconnected, V
CM
= 0,
T
A
= 0°C to +85°C,
unless otherwise
noted. Typical values are at T
A
= +25°C.)
PARAMETER
Supply Voltage Range
V
VCC
= 2.6V
Supply Current
Input Offset Voltage
Input Bias Current
Input Offset Current
Input Resistance
Input Common-Mode Voltage
Range, V
CM
Common-Mode Rejection Ratio,
CMRR
Power-Supply Rejection Ratio,
PSRR
V
AGND
- 0.1V
≤
V
CM
≤
V
VCC
+ 0.1V
2.6V < V
VCC
< 5.5V
V
AGND
+ 0.05V
≤
V
AOUT
≤
V
VCC
- 0.05V
V
AGND
+ 0.20V
≤
V
AOUT
≤
V
VCC
- 0.20V
V
VCC
-V
VOH
V
VOL
- V
AGND
Sourcing, V
VCC
= 5V
Sinking, V
VCC
= 5V
2.6V < V
VCC
< 5.5V
2.6V < V
VCC
< 5.5V
0 < V
SHDN2
< V
VCC
0.7 x
V
VCC
±0.5
1
70
20
0.4
f = 10kHz
f = 10kHz
AVCL = 1V/V (Note 2)
3
4
52
0.1
470
±120
R
L
= 100kΩ
R
L
= 2kΩ
R
L
= 100kΩ
R
L
= 2kΩ
R
L
= 100kΩ
RL = 2kΩ
85
V
VCC
= 5V
V
SHDN2
= 0, V
VCC
= 5.5V
V
AGND
- 0.1V
≤
V
CM
≤
V
VCC
+ 0.1V
V
AGND
- 0.1V
≤
V
CM
≤
V
VCC
+ 0.1V
V
AGND
- 0.1V
≤
V
CM
≤
V
VCC
+ 0.1V
V
IN-
- V
IN+
≤
10mV
-0.1
60
70
80
90
120
dB
110
1
35
1
30
11
30
0.3 x
V
VCC
90
90
mV
mV
mA
V
V
nA
MHz
Degrees
dB
V/µs
nV/√Hz
pA/√Hz
pF
µs
µs
CONDITIONS
MIN
2.6
320
375
0.1
±0.4
±10
±1
4
V
VCC
+
0.1
TYP
MAX
5.5
800
900
2.0
±3.0
±100
±10
mV
nA
nA
MΩ
V
dB
dB
µA
UNITS
V
Large-Signal Voltage Gain, AVOL
Output Voltage Swing High, VOH
Output Voltage Swing Low, VOL
Output Short-Circuit Current
SHDN2
Logic Low
SHDN2
Logic High
SHDN2
Input Current
Gain Bandwidth Product, GBW
Phase Margin,
φM
Gain Margin, GM
Slew Rate, SR
Input Voltage Noise Density
Input Current Noise Density
Capacitive-Load Stability
Shutdown Delay Time
Enable Delay Time
4
_______________________________________________________________________________________
W-CDMA/N-CDMA Cellular Phone HBT PA
Management ICs
ELECTRICAL CHARACTERISTICS (OP AMP) (continued)
(V
INP
= V
IN
= V
VCC
= V
SHDN2
= 2.7V, V
AOUT
= V
VCC
/2, R
L
=
∞
connected from AOUT to V
VCC
/2, V
PGND
= V
AGND
= V
SHDN1
=
V
SHDN3
= V
PWM
= V
ADJ
= 0, OUT = LX = TOUT = REF = COMP = unconnected, V
CM
= 0,
T
A
= 0°C to +85°C,
unless otherwise
noted. Typical values are at T
A
= +25°C.)
PARAMETER
Power-On Time
Input Capacitance
Total Harmonic Distortion
Settling Time to 0.01%
Active Discharge Output
Impedance
f =10kHz, V
AOUT
= 2V
P-P
, AVCL =1, V
VCC
= 5V,
R
AOUT
= 100kΩ to V
VCC
/2
∆V
AOUT
= 4V step, V
VCC
= 5V, AVCL = 1
V
SHDN2
= 0, I
AOUT
= 1mA
CONDITIONS
MIN
TYP
4
2.5
0.01
10
100
500
MAX
UNITS
µs
pF
%
µs
Ω
MAX1958/MAX1959
ELECTRICAL CHARACTERISTICS (TEMPERATURE SENSOR)
(V
INP
= V
IN
= V
VCC
= V
SHDN3
= 2.7V, V
AGND
= V
PGND
= V
PWM
= V
SHDN1
= V
SHDN2
= V
ADJ
= 0, IN- = IN+ = AOUT = COMP = LX =
OUT = REF = unconnected, C
TOUT
= 0.01µF (min),
T
A
= 0°C to +85°C,
unless otherwise noted. Typical values are at T
A
= +25°C.)
PARAMETER
Temperature Sensor Error
(Note 3)
Output Voltage at +27°C
Sensor Gain (Note 4)
Nonlinearity
Load Regulation
Line Regulation
Quiescent Current
SHDN3
Logic High Voltage
SHDN3
Logic Low Voltage
SHDN3
Current
0
≤
I
LOAD
≤
15µA
2.6V
≤
V
VCC
≤
5.5V
2.6V
≤
V
VCC
≤
5.5V
2.6V < V
VCC
< 5.5V
2.6V < V
VCC
< 5.5V
V
VCC
= 5.5V
0.1
1.6
0.6
1.0
10
T
A
= 0°C (Note 2)
T
A
= +25°C (Note 2)
T
A
= +85°C
CONDITIONS
MIN
-3.5
-2.5
-2.5
1.56
-11.64
±0.4
-5
-2.3
18
TYP
MAX
+3.5
+2.5
+2.5
V
mV/°C
%
mV
mV/V
µA
V
V
µA
°C
UNITS
_______________________________________________________________________________________
5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
