Agilent HMPP-386x Series
MiniPak Surface Mount
RF PIN Diodes
Data Sheet
Features
• Surface mount MiniPak package
– low height, 0.7 mm (0.028") max.
– small footprint, 1.75 mm
2
(0.0028 inch
2
)
• Better thermal conductivity for
higher power dissipation
Description/Applications
These ultra-miniature products
represent the blending of Agilent
Technologies’ proven semiconduc-
tor and the latest in leadless
packaging technology.
The HMPP-386x series of general
purpose PIN diodes are designed
for two classes of applications.
The first is attenuators where
current consumption is the most
important design consideration.
The second application for this
series of diodes is in switches
where low capacitance with no
reverse bias is the driving issue for
the designer.
The low dielectric relaxation
frequency of the HMPP-386x
insures that low capacitance can
be reached at zero volts reverse
bias at frequencies above 1 GHz,
making this PIN diode ideal for
hand held applications.
Low junction capacitance of the
PIN diode chip, combined with
ultra low package parasitics, mean
that these products may be used
at frequencies which are higher
than the upper limit for conven-
tional PIN diodes.
Note that Agilent’s manufacturing
techniques assure that dice
packaged in pairs are taken from
adjacent sites on the wafer,
assuring the highest degree of
match.
• Single and dual versions
• Matched diodes for consistent
performance
• Low capacitance at zero volts
• Low resistance
• Low FIT (Failure in Time) rate*
• Six-sigma quality level
* For more information, see the Surface
Mount Schottky Reliability Data Sheet.
Pin Connections and
Package Marking
3
4
AA
2
1
Product code
Date code
Package Lead Code Identification
(Top View)
Single
3
4
3
Anti-parallel
4
3
Parallel
4
Notes:
1. Package marking provides orientation and
identification.
2. See “Electrical Specifications” for
appropriate package marking.
2
#0
1
2
#2
1
2
#5
1
HMPP-386x Series Absolute Maximum Ratings
[1]
,
T
C
= 25°C
Symbol
I
f
P
IV
T
j
T
stg
θ
jc
Parameter
Forward Current (1
µs
pulse)
Peak Inverse Voltage
Junction Temperature
Storage Temperature
Thermal Resistance
[2]
Units
Amp
V
°C
°C
°C/W
Value
1
100
150
-65 to +150
150
ESD WARNING:
Handling Precautions Should Be
Taken To Avoid Static Discharge.
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the
device.
2. T
C
= +25°C, where T
C
is defined to be the temperature at the package pins where contact is
made to the circuit board.
Electrical Specifications,
T
C
= +25°C, each diode
Part Number
HMPP-
3860
3862
3865
Test Conditions
Package
Marking Code
H
F
E
Lead Code
0
2
5
Configuration
Single
Anti-parallel
Parallel
Minimum Breakdown
Voltage (V)
50
Typical Series
Resistance (Ω)
3.0/1.5*
V
R
= V
BR
Measure
I
R
≤
10
µA
I
F
= 10 mA
f = 100 MHz
*I
F
= 100 mA
Typical Parameters,
T
C
= +25°C
Part Number
HMPP-
3860
3862
3865
Test Conditions
Total Resistance
R
T
(Ω)
22
Carrier Lifetime
τ
(ns)
500
Reverse Recovery Time
T
rr
(ns)
80
Total Capacitance
C
T
(pF)
0.20
I
F
= 1 mA
f = 100 MHz
I
F
= 50 mA
T
R
= 250 mA
V
R
= 10V
I
F
= 20 mA
90% Recovery
V
R
= 50 V
f = 1 MHz
2
HMPP-386x Series Typical Performance,
T
c
= 25°C, each diode
0.35
1000
INPUT INTERCEPT POINT (dBm)
T
A
= +85°C
T
A
= +25°C
T
A
= –55°C
120
TOTAL CAPACITANCE (pF)
RESISTANCE (OHMS)
0.30
1 MHz
0.25
100 MHz
0.20
1 GHz
100
Diode Mounted as a
Series Switch in a
115
50
Ω
Microstrip and
Tested at 123 MHz
110
105
100
95
90
85
Intercept point
will be higher
at higher
frequencies
10
0.15
0
2
4
6
8
10 12 14 16 18 20
1
0.01
0.1
1
10
100
1
10
I
F
– FORWARD BIAS CURRENT (mA)
30
REVERSE VOLTAGE (V)
BIAS CURRENT (mA)
Figure 1. RF Capacitance vs. Reverse Bias.
Figure 2. Typical RF Resistance vs. Forward
Bias Current.
Figure 3. 2nd Harmonic Input Intercept Point
vs. Forward Bias Current for Switch Diodes.
1000
100
T
rr
– REVERSE RECOVERY TIME (ns)
I
F
– FORWARD CURRENT (mA)
10
V
R
= 5 V
100
V
R
= 10 V
V
R
= 20 V
1
0.1
125°C
25°C
0.6
–50°C
0.8
1.0
1.2
10
10
20
FORWARD CURRENT (mA)
30
0.01
0
0.2
0.4
V
F
– FORWARD VOLTAGE (mA)
Figure 4. Reverse Recovery Time vs. Forward
Current for Various Reverse Voltages.
Figure 5. Forward Current vs. Forward
Voltage.
Typical Applications
RF COMMON
RF COMMON
2
1
RF 1
3
4
RF 2
RF 1
2
1
2
1
3
4
3
4
RF 2
BIAS 1
BIAS 2
BIAS
Figure 6. Simple SPDT Switch Using Only Positive Bias.
Figure 7. High Isolation SPDT Switch Using Dual Bias.
3
RF COMMON
VARIABLE BIAS
3
4
1
2
4
3
RF 1
4
1
3
1
2
3
4
1
RF 2
INPUT
2
1
4
3
RF IN/OUT
2
2
FIXED
BIAS
VOLTAGE
BIAS
Figure 9. Four Diode
π
Attenuator. See AN1048 for details.
Figure 8. Very High Isolation SPDT Switch, Dual Bias.
BIAS
3
4
3
4
2
1
2
1
Figure 10. High Isolation SPST Switch (Repeat Cells as Required).
Diode Lifetime and Resistance
The resistance of a PIN diode is
controlled by the conductivity (or
resistivity) of the I layer. This
conductivity is controlled by the
density of the cloud of carriers
(charges) in the I layer (which is, in
turn, controlled by the DC bias).
Minority carrier lifetime, indicated
by the Greek symbol
τ,
is a mea-
sure of the time it takes for the
charge stored in the I layer to
decay, when forward bias is
replaced with reverse bias, to some
predetermined value. This lifetime
can be short (35 to 200 nsec. for
epitaxial diodes) or it can be
relatively long (400 to 3000 nsec.
for bulk diodes). Lifetime has a
strong influence over a number of
PIN diode parameters, among
which are distortion and basic
diode behavior.
To study the effect of lifetime on
diode behavior, we first define a
cutoff frequency f
C
= 1/τ. For short
lifetime diodes, this cutoff fre-
quency can be as high as 30 MHz
while for our longer lifetime
diodes f
C
≅
400 KHz. At frequen-
cies which are ten times f
C
(or
more), a PIN diode does indeed
act like a current controlled
variable resistor. At frequencies
which are one tenth (or less) of f
C
,
a PIN diode acts like an ordinary
PN junction diode. Finally, at
0.1f
C
≤
f
≤
10f
C
, the behavior of the
diode is very complex. Suffice it to
mention that in this frequency
range, the diode can exhibit very
strong capacitive or inductive
reactance — it will not behave at
all like a resistor.
The HMPP-386x family features a
typical lifetime of 300 to 500 ns, so
10f
C
for this part is 5 MHz. At any
frequency over 5 MHz, the resis-
tance of this diode will follow the
curve given in Figure 2. From this
curve, it can be seen that the
HMPP-386x family produces a
lower resistance at a given value
of bias current than most attenua-
tor PIN diodes, making it ideal for
applications where current
consumption is important.
4
Dielectric Relaxation Frequency and
Diode Capacitance
f
DR
(Dielectric Relaxation Fre-
quency) for a PIN diode is given
by the equation
f
DR
= 1
2πρε
where…
ρ
= bulk resistivity of the I-layer
ε
=
ε
0
ε
R
= 10
-12
F/cm
= bulk susceptance of silicon
In the case of an epitaxial diode
with a value for
ρ
of 10Ω-cm, f
DR
will be in Ku-Band. For a bulk
diode fabricated on very pure
material,
ρ
can be as high as 2000,
resulting in a value of f
DR
of
80 MHz.
The implications of a low f
DR
are
very important in RF attenuator
and switch circuits. At operating
frequencies below f
DR
, reverse
bias (as much as 50V) is needed to
minimize junction capacitance. At
operating frequencies well above
f
DR
, the curve of capacitance vs.
reverse bias is flat.
For the HMPP-386x family, f
DR
is
around 500 MHz, resulting in very
low capacitance at zero bias for
frequencies above 1 GHz. See
Figure 1.
Linear Equivalent Circuit
In order to predict the perfor-
mance of the HMPP-386x as a
switch or an attenuator, it is
necessary to construct a model
which can then be used in one of
the several linear analysis pro-
grams presently on the market.
Such a model is given in Figure 11,
where R
S
+ R
j
is given in Figure 2
and C
j
is provided in Figure 1.
Careful examination of Figure 11
will reveal the fact that the
package parasitics (inductance
and capacitance) are much lower
for the MiniPak than they are for
leaded plastic packages such as
the SOT-23, SOT-323 or others.
This will permit the HMPP-386x
family to be used at higher fre-
quencies than its conventional
leaded counterparts.
20 fF
3
30 fF
1.1 nH
2
1
4
30 fF
20 fF
Single diode package (HMPP-3860)
20 fF
0.05 nH
3
30 fF
0.05 nH
2
12 fF
0.5 nH
0.5 nH
30 fF
0.05 nH
1
0.5 nH
0.5 nH
0.05 nH
4
20 fF
Anti-parallel diode package (HMPP-3862)
20 fF
0.05 nH
3
30 fF
0.05 nH
2
12 fF
0.5 nH
0.5 nH
30 fF
0.05 nH
1
0.5 nH
0.5 nH
0.05 nH
4
20 fF
Parallel diode package (HMPP-3865)
Figure 11. Linear Equivalent Circuit of the
MiniPak PIN Diode.
MiniPak Outline Drawing
1.44 (0.058)
1.40 (0.056)
1.12 (0.045)
1.08 (0.043)
1.20 (0.048)
1.16 (0.046)
4
1
3
2
0.82 (0.033)
0.78 (0.031)
0.32 (0.013)
0.28 (0.011)
0.00
Top view
0.92 (0.037)
0.00
0.88 (0.035)
-0.07 (-0.003) 0.42 (0.017)
1.32 (0.053)
-0.03 (-0.001) 0.38 (0.015)
1.28 (0.051)
0.70 (0.028)
0.58 (0.023)
Bottom view
-0.07 (-0.003)
-0.03 (-0.001)
Side view
5
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