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2SC5637

产品描述Power Bipolar Transistor, 10A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PMLH, 3 PIN
产品类别分立半导体    晶体管   
文件大小36KB,共4页
制造商SANYO
官网地址http://www.semic.sanyo.co.jp/english/index-e.html
下载文档 详细参数 全文预览

2SC5637概述

Power Bipolar Transistor, 10A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PMLH, 3 PIN

2SC5637规格参数

参数名称属性值
Objectid1546485424
零件包装代码TO-3PMLH
包装说明FLANGE MOUNT, R-PSFM-T3
针数3
Reach Compliance Codeunknown
ECCN代码EAR99
其他特性SINGLE WITH BUILT-IN RESISTOR
最大集电极电流 (IC)10 A
集电极-发射极最大电压800 V
配置SINGLE
最小直流电流增益 (hFE)4
JESD-30 代码R-PSFM-T3
元件数量1
端子数量3
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
极性/信道类型NPN
最大功率耗散 (Abs)85 W
认证状态Not Qualified
表面贴装NO
端子形式THROUGH-HOLE
端子位置SINGLE
晶体管应用AMPLIFIER
晶体管元件材料SILICON

2SC5637文档预览

Ordering number:ENN6465
NPN Triple Diffused Planar Silicon Transistor
2SC5637
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
· High speed (t
f
=100ns typ).
· High breakdown voltage (V
CBO
=1500V).
· High reliability (Adoption of HVP process).
· Adoption of MBIT process.
Package Dimensions
unit:mm
2174
[2SC5637]
16.0
5.0
3.4
5.6
3.1
0.8
22.0
21.0
4.0
2.8
2.0
0.7
1
2
5.45
3.5
3
20.4
0.9
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25˚C
5.45
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PMLH
Conditions
0.8
2.1
Ratings
1500
800
6
10
25
3.0
85
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Collector Cutoff Current
Collector-to-Emitter Sustain Voltage
Emitter Cutoff Current
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Symbol
ICBO
ICES
VCB=800V, IE=0
VCE=1500V, RBE=0
800
1.0
5
1.5
Conditions
Ratings
min
typ
max
10
1.0
Unit
µA
mA
V
mA
V
V
VCEO(sus) IC=100mA, IB=0
IEBO
VEB=4V, IC=0
VCE(sat) IC=8A, IB=2A
VBE(sat)
IC=8A, IB=2A
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71700TS (KOTO) TA-2594 No.6465–1/4
2SC5637
Continued from preceding page.
Parameter
DC Current Gain
Storage Time
Fall Time
Symbol
hFE1
hFE2
tstg
tf
VCE=5V, IC=1A
VCE=5V, IC=8A
IC=6A, IB1=1.2A, IB2=–2.4A
IC=6A, IB1=1.2A, IB2=–2.4A
0.1
Conditions
Ratings
min
20
4
typ
max
30
7
3.0
0.2
µs
µs
Unit
Switching Time Test Circuit
PW=20µs
D.C.≤1%
INPUT
RB
VR
50Ω
+
100µF
VBE=--2V
+
470µF
VCC=200V
RL=33.3Ω
IB1
IB2
OUTPUT
10
9
IC -- VCE
1.8A 1.6A
1.4A
2.0
A
11
10
IC -- VBE
VCE=5V
Collector Current, IC – A
Collector Current, IC – A
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
1.2A
1.0A
0.8A
0.6A
0.4A
0.2A
9
8
7
6
5
4
3
2
IB=0
9
10
1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IT01754
Collector-to-Emitter Voltage, VCE – V
7
5
3
IT01753
7
Base-to-Emitter Voltage, VBE – V
hFE -- IC
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
VCE(sat) -- IC
IC / IB=5
Ta=120
°C
VCE=5V
5
3
2
1.0
7
5
3
2
0.1
7
5
3
DC Current Gain, hFE
2
25
°
C
--40
°
C
10
7
5
3
2
25
°
C
Ta=--40°C
120°C
7 0.1
2
3
5
7 1.0
2
3
5
7
2
10
IT01756
1.0
7
7
0.1
2
3
5
7
1.0
2
3
5
7
10
2
Collector Current, IC – A
IT01755
Collector Current, IC – A
20
°
C
25
°
C
--40
°
C
Ta=
1
No.6465–2/4
2SC5637
7
5
SW Time -- IC
tstg
10
SW Time -- IB2
ts
tg
Switching Time, SW Time –
µs
3
2
Switching Time, SW Time –
µs
VCC=200V
IC / IB1=5
IB2 / IB1=2
R load
7
5
3
2
VCC=200V
IC= 6A
IB1=1.2A
R load
1.0
7
5
3
2
tf
1.0
7
5
3
2
tf
0.1
7
7 0.1
2
3
5
7
Collector Current, IC – A
1.0
2
3
5
7
2
10
IT01757
0.1
7
7
0.1
2
3
5
7
Base Current, IB2 – A
1.0
2
3
5
10
IT01758
7
5
3
2
F.B A S O
ICP=25A
IC=10A
5
3
2
R.B A S O
L=500µH
IB2=--3A
Tc=25°C
Single pulse
0
µ
10
Collector Current, IC – A
Collector Current, IC – A
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0
µ
30
s
P
C =8
5W
10
7
5
3
2
1.0
7
5
3
2
0.1
s
s
10m
DC
op
s
1m
er
ati
on
Tc=25°C
Single pulse
3
5
7 10
2
3
5
Collector-to-Emitter Voltage, VCE – V
7 100
2
3
5
7 1000
5
7
100
2
3
5
7
1000
2
3
IT01759
100
Collector-to-Emitter Voltage, VCE – V
IT01760
3.5
PC -- Ta
Collector Dissipation, PC – W
PC -- Tc
Collector Dissipation, PC – W
3.0
85
80
2.5
No
2.0
he
at
60
sin
k
1.5
40
1.0
20
0.5
0
0
20
0
Ambient Temperature, Ta –
°C
40
60
80
100
120
140
160
0
20
40
IT01761
Case Temperature, Tc –
°C
60
80
100
120
140
160
IT01762
No.6465–3/4
2SC5637
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of July, 2000. Specifications and information herein are subject to
change without notice.
PS No.6465–4/4
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