2SC5629
Silicon NPN Epitaxial
High Frequency Amplifier / Oscillator
ADE-208-980 (Z)
1st. Edition
Nov. 2000
Features
•
Super compact package;
(1.6
×
0.8
×
0.7mm)
•
High power gain and low noise figure;
(PG = 9 dB typ., NF = 1.1 dB typ., at f = 900MHz, V
CE
= 1 V)
Outline
SMPAK
3
1
2
1. Emitter
2. Base
3. Collector
Note: Marking is “XZ-”.
2SC5629
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
Ratings
15
6
1.5
50
80
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector cutoff current
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
Power gain
Noise figure
Symbol
V
(BR)CBO
I
CBO
I
CEO
I
EBO
h
FE
Cob
f
T
PG
NF
Min
15
—
—
—
80
—
2
6
—
Typ
—
—
—
—
120
1.4
5
9
1.1
Max
—
1
1
10
160
1.9
—
—
1.9
Unit
V
µA
mA
µA
V
pF
GHz
dB
dB
Test Conditions
I
C
= 10µA , I
E
= 0
V
CB
= 12V , I
E
= 0
V
CE
= 6V , R
BE
=
∞
V
EB
= 1.5V , I
C
= 0
V
CE
= 1V , I
C
= 5mA
V
CB
= 1V , I
E
= 0
f = 1MHz
V
CE
= 1V , I
C
= 5mA
V
CE
= 1V, I
C
= 5mA
f = 900MHz
V
CE
= 1V, I
C
= 5mA
f = 900MHz
2
2SC5629
Main Characteristics
DC Current Transfer Ratio vs.
Collector Current
Maximum Collector Dissipation Curve
200
Collector Power Dissipation Pc (mW)
DC Current Transfer Ratio h
FE
200
150
V
CE
= 5 V
3V
100
1V
100
50
0
0
50
100
150
200
1
2
5
10
20
50
100
Ambient Temperature Ta (°C)
Collector Current I
C
(mA)
Cob (pF)
2.0
Collector Output Capacitance vs.
Collector to Base Voltage
IE = 0
f = 1MHz
20
(GHz)
Gain Bandwidth Product vs.
Collector Current
1.6
16
V
CE
= 3 to 5V
12
1V
8
Collector Output Capacitance
0.8
0.4
Gain Bandwidth Product
0.2
0.5
1
2
5
10
1.2
f
T
4
0
0.1
0
1
2
5
10
20
50
100
Collector to Base Voltage V
CB
(V)
Collector Curren I
C
(mA)
3
2SC5629
Power Gain vs. Collector Current
20
f = 900MHz
16
Power Gain PG (dB)
V
CE
= 5 V
12
3V
1V
Noise Figure NF (dB)
4
5
f = 900MHz
Noise Figure vs. Collector Current
3
V
CE
= 1 to 5V
8
2
4
1
0
1
0
2
5
10
20
50
(mA)
100
1
2
5
10
20
50
100
Collector Current I
C
Collector Current I
C
(mA)
20
Parameter | S
21
| (dB)
S
21
Parameter vs. Collector Current
f = 1GHz
16
V
CE
= 5 V
12
3V
1V
8
2
S
21
4
0
1
2
5
10
20
50
(mA)
100
Collector Current I
C
4
2SC5629
S11 Parameter vs. Frequency
.8
.6
.4
3
.2
4
5
10
0
.2
.4
.6 .8 1
1.5 2
3 45
10
−10
−.2
−5
−4
−3
−.4
−.6
−.8
−1
−1.5
−2
−120°
−90°
180°
0°
150°
30°
1
1.5
2
S21 Parameter vs. Frequency
90°
120°
Scale: 5 / div.
60°
−150°
−30°
−60°
Condition : V
CE
= 1 V , I
C
= 5 mA
100 to 2000 MHz (100 MHz step)
Condition : V
CE
= 1 V , I
C
= 5 mA
100 to 2000 MHz (100 MHz step)
S12 Parameter vs. Frequency
90°
120°
S22 Parameter vs. Frequency
.8
.6
.4
3
1
1.5
2
Scale: 0.08 / div.
60°
150°
30°
.2
4
5
10
180°
0°
0
.2
.4
.6 .8 1
1.5 2
3 45
10
−10
−.2
−150°
−30°
−.4
−120°
−60°
−90°
−.6
−.8
−1
−1.5
−2
−5
−4
−3
Condition : V
CE
= 1 V , I
C
= 5 mA
100 to 2000 MHz (100 MHz step)
Condition : V
CE
= 1 V , I
C
= 5 mA
100 to 2000 MHz (100 MHz step)
5
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