Ordering number : ENN7134A
FW332
N-Channel and P-Channel Silicon MOSFETs
FW332
Motor Driver Applications
Preliminary
Features
•
•
•
Package Dimensions
unit : mm
2129
[FW332]
8
5
0.3
4.4
6.0
0.2
5.0
0.595
1.27
0.43
•
Low ON-resistance.
Ultrahigh-speed switching.
Composite type with an N-channel MOSFET and a P-
channel MOSFET driving from a 4V supply voltage
contained in a single package.
High-density mounting.
0.1
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
1.5
1.8max
1
4
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
Conditions
Ratings
N-channel
30
±20
4
P-channel
--30
±20
--3
--12
1.4
1.7
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (2000mm
!0.8mm)1unit
2
16
2
Mounted on a ceramic board (2000mm
!0.8mm)
Electrical Characteristics
at Ta=25°C
Parameter
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=4A
30
1
±10
1.0
3.7
5.3
2.4
V
µA
µA
V
S
Symbol
Conditions
Ratings
min
typ
max
Unit
Marking : W332
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1502 TS IM TA-3869 / 11502 TS IM TA-3326 No.7134-1/6
FW332
Continued from preceding page.
Parameter
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=--1mA, VGS=0
VDS=--30V, VGS=0
VGS=±16V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=-
-3A
ID=--3A, VGS=--10V
ID=--1.5A, VGS=-
-4V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--10V, VGS=--10V, ID=-
-3A
VDS=--10V, VGS=--10V, ID=-
-3A
VDS=--10V, VGS=--10V, ID=-
-3A
IS=--3A, VGS=0
--30
--1
±10
--1.0
2.9
4.2
90
160
370
100
65
8
45
30
31
8.6
1.2
1.8
--0.85
--1.5
115
225
--2.4
V
µA
µA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Symbol
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=4A, VGS=10V
ID=2A, VGS=4V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=10V, ID=4A
VDS=10V, VGS=10V, ID=4A
VDS=10V, VGS=10V, ID=4A
IS=4A, VGS=0
Ratings
min
typ
55
105
270
90
55
9
80
25
17
7.0
1.3
1.5
0.84
1.2
max
70
145
Unit
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Electrical Connection
D1
D1
D2
D2
(Top view)
S1
G1
S2
G2
Switching Time Test Circuit
[N-channel]
VDD=15V
VIN
10V
0V
VIN
PW=10µs
D.C.≤1%
ID=4A
RL=3.75Ω
[P-channel]
VDD= --15V
VIN
0V
--10V
VIN
PW=10µs
D.C.≤1%
ID= --3A
RL=5Ω
D
G
VOUT
D
G
VOUT
P.G
50Ω
FW332
P.G
50Ω
FW332
S
S
No.7134-2/6
FW332
4.0
ID -- VDS
5V
8V
6V
[Nch]
3.0
ID -- VGS
VDS=10V
[Nch]
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
4V
2.5
Drain Current, ID -- A
Drain Current, ID -- A
1 0V
2.0
VGS=3V
1.5
Ta=
75
°
C
0
0.5
1.0
1.5
2.0
2.5
1.0
0.5
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
3.0
3.5
4.0
Drain-to-Source Voltage, VDS -- V
250
IT03321
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
160
25
°
C
--25
°
C
IT03322
[Nch]
Ta=25°C
RDS(on) -- Ta
[Nch]
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
140
120
100
80
60
40
20
0
--60
200
150
2
I D=
=4V
VGS
A,
4A
ID=2A
100
10V
V S=
=4A, G
ID
50
0
0
1
2
3
4
5
6
7
8
9
10
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
10
y
fs -- ID
IT04018
Ambient Temperature, Ta --
°C
10
7
5
IT04019
[Nch]
VDS=10V
IF -- VSD
Forward Transfer Admittance,
y
fs -- S
[Nch]
VGS=0
7
5
Forward Current, IF -- A
3
2
3
2
C
25
°
--
Ta=
C
25
°
C
75
°
1.0
7
5
3
2
0.1
1.0
7
5
3
0.1
2
3
5
7
1.0
2
3
5
IT04020
0
0.2
0.4
Ta=75
°
C
25
°
C
--25
°
C
0.6
0.8
1.0
1.2
1.4
IT03326
Drain Current, ID -- A
2
100
SW Time -- ID
[Nch]
VDD=15V
VGS=10V
1000
7
5
Ciss, Coss, Crss -- VDS
Diode Forward Voltage, VSD -- V
[Nch]
f=1MHz
Switching Time, SW Time -- ns
7
3
2
10
7
5
3
2
1.0
5
7
0.1
2
3
td(off)
tf
td(on)
Ciss, Coss, Crss -- pF
5
3
2
Ciss
100
7
5
3
2
Coss
Crss
tr
10
5
7
1.0
2
3
5
0
5
10
15
20
25
30
IT03328
Drain Current, ID -- A
IT04021
Drain-to-Source Voltage, VDS -- V
No.7134-3/6
FW332
10
VGS -- Qg
VDS=10V
ID=4A
[Nch]
3
2
10
7
5
ASO
IDP=16A
ID=4A
[Nch]
<10µs
Gate-to-Source Voltage, VGS -- V
8
10
0
1m
µ
s
s
Drain Current, ID -- A
3
2
1.0
7
5
3
2
0.1
7
5
3
2
6
DC
o
10
0
10
ms
ms
pe
ra
tio
n
4
Operation in this
area is limited by RDS(on).
Ta=25°C
Single pulse
Mounted on a ceramic board(2000mm
2
!0.8mm)
1unit
2
3
5
7 1.0
2
3
5
7 10
2
3
5
2
0
0
1
2
3
4
5
6
7
8
IT03329
0.01
0.1
Total Gate Charge, Qg -- nC
--3.0
ID -- VDS
--6.0
V
V
--8.
0
Drain-to-Source Voltage, VDS -- V
--3.0
IT04022
[Pch]
ID -- VGS
[Pch]
VDS= --10V
--4
.
0V
--10.
0V
--5.
0
V
--2.5
--3.0V
S=
VG
--2.5
Drain Current, ID -- A
--2.0
Drain Current, ID -- A
--2.0
--1.5
--1.5
--1.0
--1.0
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
IT04025
0
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
--4.0
Drain-to-Source Voltage, VDS -- V
300
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
300
--25
°
--0.5
--0.5
Ta=
75
°
C
C
25
°
C
IT04026
[Pch]
Ta=25°C
RDS(on) -- Ta
[Pch]
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
250
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
250
--3.0A
200
200
ID= --1.5A
150
150
--1.5
I D=
--4V
S=
A, VG
100
100
--10V
S=
3.0A, V G
I D= --
50
50
0
0
--1
--2
--3
--4
--5
--6
--7
--8
--9
--10
0
--60
--40
--20
0
20
40
60
80
100
120
140 160
IT04028
Gate-to-Source Voltage, VGS -- V
10
y
fs -- ID
IT04027
--10
7
5
Ambient Temperature, Ta --
°C
Forward Transfer Admittance,
y
fs -- S
[Pch]
VDS= --10V
IF -- VSD
[Pch]
VGS=0
7
5
Forward Current, IF -- A
3
2
3
2
--2
Ta=
5
°
C
C
75
°
C
25
°
--1.0
Ta=7
5
°
C
--0.4
--0.5
--0.6
7
5
3
2
--0.1
--0.3
1.0
7
5
3
--0.1
2
3
5
7
--1.0
2
3
5
IT04029
--0.7
--0.8
--25
°
C
--0.9
25
°
C
--1.0
--1.1
--1.2
Drain Current, ID -- A
Diode Forward Voltage, VSD -- V
IT04030
No.7134-4/6
FW332
100
7
SW Time -- ID
td(off)
[Pch]
1000
7
5
Ciss, Coss, Crss -- VDS
[Pch]
f=1MHz
Switching Time, SW Time -- ns
5
3
2
Ciss
tf
Ciss, Coss, Crss -- pF
3
2
tr
10
7
5
3
2
1.0
--0.1
td(on)
100
7
5
3
2
Coss
Crss
VDD= --15V
VGS= --10V
2
3
5
7
--1.0
2
3
5
7
10
0
--5
--10
--15
--20
--25
--30
IT04032
Drain Current, ID -- A
--10
IT04031
VGS -- Qg
Drain-to-Source Voltage, VDS -- V
3
2
--10
7
5
[Pch]
ASO
[Pch]
Gate-to-Source Voltage, VGS -- V
VDS= --10V
ID= --3A
--8
IDP= --12A
ID= --3A
<10µs
10
1m
0
µ
s
s
Drain Current, ID -- A
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
10
m
DC
--6
10
0
op
era
t
ion
s
ms
--4
Operation in this
area is limited by RDS(on).
--2
0
0
1
2
3
4
5
6
7
8
9
10
--0.01
--0.1
Ta=25°C
Single pulse
Mounted on a ceramic board(2000mm
2
!0.8mm)
1unit
2
3
5
7 --1.0
2
3
5
7 --10
2
3
5
Total Gate Charge, Qg -- nC
IT04033
2.0
Allowable Power Dissipation(FET 1), PD -- W
1.6
1.4
1.2
PD(FET 1) -- PD(FET 2)
[Nch, Pch]
M
ou
Drain-to-Source Voltage, VDS -- V
IT04034
PD -- Ta
[Nch, Pch]
Mounted on a ceramic
board(2000mm
2
!0.8mm)
Allowable Power Dissipation, PD -- W
nt
ed
on
1.7
1.6
1.4
1.2
ac
era
m
ic
b
0.8
oa
rd
To
tal
1u
nit
(2
di
00
ss
0m
m
2
!
0
ip
ati
o
0.8
n
0.4
.8m
m
)
0.4
0
0
0.4
0.8
1.2
1.4
1.6
0
0
20
40
60
80
100
120
140
160
Allowable Power Dissipation(FET 2), PD -- W
IT04023
Ambient Temperature, Ta --
°C
IT04024
No.7134-5/6
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