Power MOSFETs
2SK3268
Silicon N-channel power MOSFET
■
Features
Unit: mm
6.5
±0.1
5.3
±0.1
4.35
±0.1
2.3
±0.1
0.5
±0.1
0.8 max.
■
Applications
1
2
3
■
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Drain-source surrender voltage
Gate-source surrender voltage
Drain current
Peak drain current
Avalanche energy capability
*
Power dissipation
T
a
=
25°C
Channel temperature
Storage temperature
Note) *: L
=
0.2 mH, I
L
=
15 A, 1 pulse
Symbol
V
DSS
V
GSS
I
D
I
DP
EAS
P
D
T
ch
T
stg
Rating
100
±20
±15
±60
22.5
20
1
150
−55
to
+150
Unit
V
V
A
A
mJ
W
°C
°C
1: Gate
2: Drain
3: Source
EIAJ: SC-63
U-G1 Package
Marking Symbol: K3268
Internal Connection
D
G
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Diode forward voltage
Short-circuit forward transfer capacitance
(Common source)
Short-circuit output capacitance
(Common source)
Reverse transfer capacitance
(Common source)
Turn-on delay time
Rise time
Fall time
Turn-off delay time
Thermal resistance (ch-c)
Thermal resistance (ch-a)
Symbol
V
DSS
I
DSS
I
GSS
V
th
Y
fs
R
DS(on)
V
DF
C
iss
C
oss
C
rss
t
d(on)
t
r
t
f
t
d(off)
R
th(ch-c)
R
th(ch-a)
V
DD
=
30 V, I
D
=
12 A, R
L
=
2.5
Ω
V
GS
=
10 V
Conditions
I
D
=
1 mA, V
GS
=
0
V
DS
=
80 V, V
GS
=
0
V
GS
= ±20
V, V
DS
=
0
V
DS
=
10 V, I
D
=
1 mA
V
DS
=
10 V, I
D
=
12 A
V
GS
=
10 V, I
D
=
12 A
I
DR
=
15 A, V
GS
=
0
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
Min
100
Typ
S
Max
10
Unit
V
µA
µA
V
S
mΩ
V
pF
pF
pF
ns
ns
ns
ns
°C/W
°C/W
2.0
6
11
70
960
285
85
15
10
35
65
±1
4.0
100
−1.4
6.25
125
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2004
SJG00031AED
(5.5)
•
Non-contact relay
•
Solenoid drive
•
Motor drive
•
Control equipment
•
Switching mode regulator
2.5
±0.1
0.75
±0.1
2.3
±0.1
4.6
±0.1
1.0
±0.1
0.1
±0.05
0.5
±0.1
(5.3)
(4.35)
(3.0)
(1.8)
1.0
±0.2
•
Avalanche energy capability guaranteed
•
High-speed switching
•
Low ON resistance R
on
•
No secondary breakdown
•
Low-voltage drive
•
High electrostatic energy capability
7.3
±0.1
1.8
±0.1
1
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and semiconductors described in this material
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applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
•
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
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2003 SEP
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