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LA733Q

产品描述VHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-92
产品类别分立半导体    晶体管   
文件大小54KB,共4页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
下载文档 详细参数 选型对比 全文预览

LA733Q概述

VHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-92

特高频波段, 硅, PNP, 射频小信号晶体管, TO-92

LA733Q规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称ON Semiconductor(安森美)
零件包装代码TO-92
包装说明TO-226, 3 PIN
针数3
Reach Compliance Code_compli
ECCN代码EAR99
最大集电极电流 (IC)0.1 A
基于收集器的最大容量7 pF
集电极-发射极最大电压48 V
配置SINGLE
最小直流电流增益 (hFE)135
最高频带VERY HIGH FREQUENCY BAND
JEDEC-95代码TO-92
JESD-30 代码O-PBCY-T3
JESD-609代码e0
元件数量1
端子数量3
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式CYLINDRICAL
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型PNP
最大功率耗散 (Abs)1.5 W
认证状态Not Qualified
表面贴装NO
端子面层Tin/Lead (Sn/Pb)
端子形式THROUGH-HOLE
端子位置BOTTOM
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用AMPLIFIER
晶体管元件材料SILICON
标称过渡频率 (fT)100 MHz

LA733Q文档预览

LA733P, LA733Q
Amplifier Transistors
PNP Silicon
http://onsemi.com
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current – Continuous
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
625
5.0
P
D
1.5
12
T
J
, T
stg
–55 to
+150
Watts
mW/°C
°C
1
2
3
TO–92
CASE 29
STYLE 14
mW
mW/°C
Value
–48
–60
–5.0
–100
Unit
Vdc
Vdc
Vdc
mAdc
1
EMITTER
3
BASE
COLLECTOR
2
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction to Ambient
Thermal Resistance,
Junction to Case
Symbol
R
θJA
R
θJC
Max
200
83.3
Unit
°C/W
°C/W
MARKING DIAGRAMS
LA
733x
YWW
LA733x
x
Y
WW
= Specific Device Code
= P or Q
= Year
= Work Week
ORDERING INFORMATION
Device
LA733P
LA733Q
Package
TO–92
TO–92
Shipping
5000 Units/Box
5000 Units/Box
©
Semiconductor Components Industries, LLC, 2001
1
August, 2001 – Rev. 1
Publication Order Number:
LA733P/D
LA733P, LA733Q
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Collector–Emitter Breakdown Voltage
(I
C
= –1.0 mAdc, I
B
= 0)
Collector–Base Breakdown Voltage
(I
C
= –10
mAdc,
I
E
= 0)
Emitter–Base Breakdown Voltage
(I
E
= –10
mAdc,
I
C
= 0)
Collector–Base Leakage Current
(V
CB
= –60 V)
Emitter–Base Leakage Current
(V
EB
= –5.0 V, I
C
= 0)
Collector–Emitter Leakage Current
(V
CE
= –50 V)
Symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
I
CEO
Min
–48
–60
–5.0
Typ
Max
–100
–100
–1.0
Unit
Vdc
Vdc
Vdc
nAdc
nAdc
mA
ON CHARACTERISTICS
DC Current Gain
(I
C
= –1.0 mAdc, V
CE
= –6.0 Vdc)
Collector–Emitter Saturation Voltage
(I
C
= –10 mAdc, I
B
= –1.0 mAdc)
Base–Emitter Saturation Voltage
(I
C
= –10 mAdc, I
B
= –1.0 mAdc)
Base–Emitter On Voltage
(I
C
= –1.0 mAdc, V
CE
= –6.0 Vdc)
h
FE
LA733P
LA733Q
V
CE(sat)
V
BE(sat)
V
BE(on)
200
135
–0.55
400
270
–0.3
–0.9
–0.68
Vdc
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain – Bandwidth Product
(I
C
= –10 mAdc, V
CE
= –6.0 Vdc, f = 20 MHz)
Common–Base Output Capacitance
(V
CB
= –60 Vdc, I
C
= 0, f = 1.0 MHz)
Noise Figure
(I
C
= –0.3 mAdc, V
CE
= –6.0 Vdc,
R
G
= 10 kW, f = 100 mHz)
f
T
C
ob
NF
100
450
7.0
18
MHz
pF
dB
http://onsemi.com
2
LA733P, LA733Q
2.0
hFE, NORMALIZED DC CURRENT GAIN
1.5
1.0
0.7
0.5
V
CE
= -10 V
T
A
= 25°C
V, VOLTAGE (VOLTS)
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0.2
-0.2
-0.5 -1.0 -2.0
-5.0 -10 -20
-50 -100 -200
I
C
, COLLECTOR CURRENT (mAdc)
0
-0.1 -0.2
V
CE(sat)
@ I
C
/I
B
= 10
-0.5 -1.0 -2.0
-5.0 -10 -20
I
C
, COLLECTOR CURRENT (mAdc)
-50 -100
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= -10 V
0.3
Figure 1. Normalized DC Current Gain
BANDWIDTH PRODUCT (MHz)
Figure 2. “Saturation” and “On” Voltages
400
300
C, CAPACITANCE (pF)
200
150
100
80
60
40
30
20
-0.5
-1.0
-2.0 -3.0 -5.0
-10
-20 -30
I
C
, COLLECTOR CURRENT (mAdc)
-50
V
CE
= -10 V
T
A
= 25°C
10
7.0
5.0
C
ib
T
A
= 25°C
3.0
2.0
C
ob
f T, CURRENT-GAIN
1.0
-0.4 -0.6
-1.0
-2.0
-4.0 -6.0 -10
V
R
, REVERSE VOLTAGE (VOLTS)
-20 -30 -40
Figure 3. Current–Gain — Bandwidth Product
Figure 4. Capacitances
0.5
0.3
V
CE
= -10 V
f = 1.0 kHz
T
A
= 25°C
r b
, BASE SPREADING RESISTANCE (OHMS)
1.0
hob, OUTPUT ADMITTANCE (OHMS)
150
140
130
120
110
100
-0.1
V
CE
= -10 V
f = 1.0 kHz
T
A
= 25°C
0.1
0.05
0.03
0.01
-0.1
-0.2
-0.5
-1.0
-2.0
I
C
, COLLECTOR CURRENT (mAdc)
-5.0
-10
-0.2 -0.3 -0.5
-1.0
-2.0 -3.0
I
C
, COLLECTOR CURRENT (mAdc)
-5.0
-10
Figure 5. Output Admittance
Figure 6. Base Spreading Resistance
http://onsemi.com
3
LA733P, LA733Q
PACKAGE DIMENSIONS
TO–92 (TO–226)
CASE 29–11
ISSUE AL
A
R
P
L
SEATING
PLANE
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
---
0.250
---
0.080
0.105
---
0.100
0.115
---
0.135
---
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
---
6.35
---
2.04
2.66
---
2.54
2.93
---
3.43
---
K
X X
G
H
V
1
D
J
C
SECTION X–X
N
N
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
ON Semiconductor
and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone:
303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax:
303–675–2176 or 800–344–3867 Toll Free USA/Canada
Email:
ONlit@hibbertco.com
N. American Technical Support:
800–282–9855 Toll Free USA/Canada
JAPAN:
ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone:
81–3–5740–2700
Email:
r14525@onsemi.com
ON Semiconductor Website:
http://onsemi.com
For additional information, please contact your local
Sales Representative.
http://onsemi.com
4
LA733P/D

LA733Q相似产品对比

LA733Q LA733P
描述 VHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-92 VHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-92
是否Rohs认证 不符合 不符合
零件包装代码 TO-92 TO-92
包装说明 TO-226, 3 PIN TO-226, 3 PIN
针数 3 3
Reach Compliance Code _compli _compli
ECCN代码 EAR99 EAR99
最大集电极电流 (IC) 0.1 A 0.1 A
基于收集器的最大容量 7 pF 7 pF
集电极-发射极最大电压 48 V 48 V
配置 SINGLE SINGLE
最小直流电流增益 (hFE) 135 200
最高频带 VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND
JEDEC-95代码 TO-92 TO-92
JESD-30 代码 O-PBCY-T3 O-PBCY-T3
JESD-609代码 e0 e0
元件数量 1 1
端子数量 3 3
最高工作温度 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 ROUND ROUND
封装形式 CYLINDRICAL CYLINDRICAL
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED
极性/信道类型 PNP PNP
最大功率耗散 (Abs) 1.5 W 0.35 W
认证状态 Not Qualified Not Qualified
表面贴装 NO NO
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 THROUGH-HOLE THROUGH-HOLE
端子位置 BOTTOM BOTTOM
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED
晶体管应用 AMPLIFIER AMPLIFIER
晶体管元件材料 SILICON SILICON
标称过渡频率 (fT) 100 MHz 100 MHz
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