ILD621/ILD621GB/ILQ621/ILQ621GB
Vishay Semiconductors
Optocoupler, Phototransistor Output
(Dual, Quad Channel)
FEATURES
Dual Channel
• Alternate source
TLP621GB-2/-4
A 1
C 2
A 3
C
4
8 C
7 E
6 C
5 E
to
TLP621-2/-4
and
• High collector emitter voltage, BV
CEO
= 70 V
• Dual and quad packages feature:
- Lower pin and parts count
- Better channel to channel CTR match
- Improved common mode rejection
• Isolation test voltage, 5300 V
RMS
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
Quad Channel
A
1
C
2
A
3
C
A
C
4
5
6
16
C
15
E
14
C
13
E
12
C
11
E
10
C
9
E
AGENCY APPROVALS
• UL1577, file no. E52744 system code H or J, double
protection
• DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending
available with option 1
• BSI IEC 60950; IEC 60065
• FIMKO
A
7
C
8
i179054
DESCRIPTION
The ILD621/ILQ621 and ILD621GB/ILQ621GB are
multi-channel phototransistor optocouplers that use GaAs
IRLED emitters and high gain NPN silicon phototransistors.
These devices are constructed using double molded
insulation technology. This assembly process offers a
withstand test voltage of 7500 VDC.
The ILD621/ILQ621GB is well suited for CMOS interfacing
given the CTR
CEsat
of 30 % minimum at I
F
of 1.0 mA. High
gain linear operation is guaranteed by a minimum CTR
CE
of
100 % at 5.0 mA. The ILD/Q621 has a guaranteed CTR
CE
50 % minimum at 5.0 mA. The transparent ion shield insures
stable DC gain in applications such as power supply
feedback circuits, where constant DC V
IO
voltages are
present.
ORDER INFORMATION
PART
ILD621
ILD621GB
ILQ621
ILQ621GB
ILD621-X006
REMARKS
CTR > 50 %, dual, DIP-8
CTR
>
100 %, dual, DIP-8
CTR > 50 %, quad, DIP-16
CTR
>
100 %, quad, DIP-16
CTR
>
50 %, dual, DIP-8 400 mil
Document Number: 83654
Rev. 1.5, 20-Dec-07
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
1
ILD621/ILD621GB/ILQ621/ILQ621GB
Vishay Semiconductors
ORDER INFORMATION
PART
ILD621-X007
ILD621-X009
ILD621GB-X007
ILQ621-X006
ILQ621-X007
ILQ621-X009
ILQ621GB-X006
ILQ621GB-X007
ILQ621GB-X009
REMARKS
CTR
>
50 %, dual, SMD-8 (option 7)
CTR
>
50 %, dual, SMD-8 (option 9)
CTR
>
100 %, dual, SMD-8 (option 7)
CTR
>
50 %, quad, DIP-16 400 mil
CTR
>
50 %, quad, SMD-16 (option 7)
CTR
>
50 %, quad, SMD-16 (option 9)
CTR
>
100 %, quad, DIP-16 400 mil
CTR
>
100 %, quad, SMD-16 (option 7)
CTR
>
100 %, quad, SMD-16 (option 9)
Optocoupler, Phototransistor Output
(Dual, Quad Channel)
Note
For additional information on the available options refer to option information.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
INPUT
Reverse voltage
Forward current
Surge current
Power dissipation
Derate from 25 °C
OUTPUT
Collector emitter reverse voltage
Collector current
Power dissipation
Derate from 25 °C
COUPLER
Isolation test voltage
Package dissipation
Derate from 25 °C
Package dissipation
Derate from 25 °C
Creepage distance
Clearance distance
Isolation resistance
Storage temperature
Operating temperature
Junction temperature
Soldering temperature
(2)
(1)
TEST CONDITION
PART
SYMBOL
V
R
I
F
I
FSM
P
diss
VALUE
6.0
60
1.5
100
1.33
70
50
100
150
- 2.0
5300
400
400
5.33
500
500
6.67
≥
7.0
≥
7.0
UNIT
V
mA
A
mW
mW/°C
V
mA
mA
mW
mW/°C
V
RMS
mW
mW
mW/°C
mW
mW
mW/°C
mm
mm
Ω
Ω
°C
°C
°C
°C
t < 1.0 ms
V
ECO
I
C
I
C
P
diss
t = 1.0 s
ILD621
ILD621GB
ILQ621
ILQ621GB
V
ISO
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
R
IO
R
IO
T
stg
T
amb
T
j
≥
≥
10
12
10
11
- 55 to + 150
- 55 to + 100
100
260
2.0 mm from case bottom
T
sld
Notes
(1)
T
amb
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
www.vishay.com
2
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83654
Rev. 1.5, 20-Dec-07
ILD621/ILD621GB/ILQ621/ILQ621GB
Optocoupler, Phototransistor Output
(Dual, Quad Channel)
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS
PARAMETER
INPUT
Forward voltage
Reverse current
Capacitance
Thermal resistance, junction to lead
OUTPUT
Collector emitter capacitance
Collector emitter leakage current
Thermal resistance, junction to lead
COUPLER
Capacitance (input to output)
Insulation resistance
Channel to channel insulation
I
F
= 8.0 mA, I
CE
= 2.4 mA
Collector emitter saturation voltage
I
F
= 1.0 mA, I
CE
= 0.2 mA
ILD621
ILQ621
ILD621GB
ILQ621GB
V
CEsat
V
CEsat
V
IO
= 0 V, f = 1.0 MHz
V
IO
= 500 V
C
IO
0.8
10
12
500
0.4
0.4
pF
Ω
VAC
V
V
V
CE
= 5.0 V, f = 1.0 MHz
V
CE
= 24 V
C
CE
I
CEO
I
CEO
R
THJL
6.8
10
20
500
100
50
pF
nA
µA
K/W
I
F
= 10 mA
V
R
= 6.0 V
V
R
= 0 V, f = 1.0 MHz
V
F
I
R
C
O
R
THJL
1.0
1.15
0.01
40
750
1.3
10
V
µA
pF
K/W
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Note
T
amb
= 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO
PARAMETER
Channel/channel
CTR match
Current transfer ratio
(collector emitter
saturated)
TEST CONDITION
I
F
= 5.0 mA, V
CE
= 5.0 V
ILD621
I
F
= 1.0 mA, V
CE
= 0.4 V
ILQ621
ILD621GB
ILQ621GB
ILD621
Current transfer ratio
(collector emitter)
I
F
= 5.0 mA, V
CE
= 5.0 V
ILQ621
ILD621GB
ILQ621GB
PART
SYMBOL
CTRX/
CTRY
CTR
CEsat
CTR
CEsat
CTR
CEsat
CTR
CEsat
CTR
CE
CTR
CE
CTR
CE
CTR
CE
30
30
50
50
100
100
80
80
200
200
600
600
600
600
MIN.
1 to 1
60
60
TYP.
MAX.
3 to 1
UNIT
%
%
%
%
%
%
%
%
%
SWITCHING CHARACTERISTICS
PARAMETER
NON-SATURATED
On time
Rise time
Off time
Fall time
Propagation H to L
Propagation L to H
I
F
= ± 10 mA, V
CC
= 5.0 V, R
L
= 75
Ω,
50 % of V
PP
I
F
= ± 10 mA, V
CC
= 5.0 V, R
L
= 75
Ω,
50 % of V
PP
I
F
= ± 10 mA, V
CC
= 5.0 V, R
L
= 75
Ω,
50 % of V
PP
I
F
= ± 10 mA, V
CC
= 5.0 V, R
L
= 75
Ω,
50 % of V
PP
I
F
= ± 10 mA, V
CC
= 5.0 V, R
L
= 75
Ω,
50 % of V
PP
I
F
= ± 10 mA, V
CC
= 5.0 V, R
L
= 75
Ω,
50 % of V
PP
t
on
t
r
t
off
t
f
t
PHL
t
PLH
3.0
2.0
2.3
2.0
1.1
2.5
µs
µs
µs
µs
µs
µs
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Document Number: 83654
Rev. 1.5, 20-Dec-07
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
3
ILD621/ILD621GB/ILQ621/ILQ621GB
Vishay Semiconductors
Optocoupler, Phototransistor Output
(Dual, Quad Channel)
SWITCHING CHARACTERISTICS
PARAMETER
SATURATED
On time
Rise time
Off time
Fall time
Propagation H to L
Propagation L to H
I
F
= ± 10 mA, V
CC
= 5.0 V, R
L
= 1 kΩ, V
TH
= 1.5 V
I
F
= ± 10 mA, V
CC
= 5.0 V, R
L
= 1 kΩ, V
TH
= 1.5 V
I
F
= ± 10 mA, V
CC
= 5.0 V, R
L
= 1 kΩ, V
TH
= 1.5 V
I
F
= ± 10 mA, V
CC
= 5.0 V, R
L
= 1 kΩ, V
TH
= 1.5 V
I
F
= ± 10 mA, V
CC
= 5.0 V, R
L
= 1 kΩ, V
TH
= 1.5 V
I
F
= ± 10 mA, V
CC
= 5.0 V, R
L
= 1 kΩ, V
TH
= 1.5 V
t
on
t
r
t
off
t
f
t
PHL
t
PLH
4.3
2.8
2.5
11
2.6
7.2
µs
µs
µs
µs
µs
µs
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
COMMON MODE TRANSIENT IMMUNITY
PARAMETER
Common mode rejection,
output high
Common mode rejection,
output low
TEST CONDITION
V
CM
= 50 V
P-P
, R
L
= 1.0 kΩ,
I
F
= 0 mA
V
CM
= 50 V
P-P
, R
L
= 1.0 kΩ,
I
F
= 10 mA
SYMBOL
CM
H
CM
L
MIN.
TYP.
5000
5000
MAX.
UNIT
V/µs
V/µs
TYPICAL CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
I
F
I
F
t
PLH
V
O
t
PLH
t
S
50
%
V
O
t
D
t
R
t
PLH
V
TH
= 1.5
V
t
PHL
iild621_03
t
D
iild621_01
t
R
t
F
t
S
t
F
Fig. 1 - Non-Saturated Switching Timing
Fig. 3 - Saturated Switching Timing
V
CC
= 5
V
V
CC
= 5
V
F = 10 kHz,
DF = 50
%
R
L
I
F
= 10 mA
V
O
F = 10 kHz,
DF = 50
%
R
L
= 75
Ω
V
O
iild621_02
iild621_04
Fig. 2 - Non-Saturated Switching Timing
Fig. 4 - Saturated Switching Timing
www.vishay.com
4
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83654
Rev. 1.5, 20-Dec-07
ILD621/ILD621GB/ILQ621/ILQ621GB
Optocoupler, Phototransistor Output
(Dual, Quad Channel)
Vishay Semiconductors
120
I
F
- Maximum LED Currrent (mA)
I
CE
- Collector Current (mA)
100
80
60
40
20
0
- 60 - 40 - 20
T
J
(max.) = 100 °C
35
30
25
20
15
10
5
0
0
20
40
60
80
100
iild621_08
50 °C
70 °C
85
°C
25 °C
0
10
20
30
40
50
60
iild621_05
T
amb
- Ambient Temperature (°C)
I
F
- LED Current (mA)
Fig. 5 - Maximum LED Current vs. Ambient Temperature
Fig. 8 - Collector Emitter Current vs. Temperature and LED Current
200
10
5
I
CEO
- Collector Emitter (nA)
P
LED
- LED Power (mW)
10
4
10
3
10
2
10
1
10
0
10
- 1
10
- 2
- 20
0
20
40
60
80
100
Typical
V
CE
= 10
V
150
100
50
0
0
- 60 - 40 - 20
20
40
60
80
iild621_06
T
amb
- Ambient Temperature (°C)
100
T
amb
- Ambient Temperature (°C)
iild621_09
Fig. 6 - Maximum LED Power Dissipation
Fig. 9 - Collector Emitter Leakage vs. Temperature
t
PLH
- Propagation Low-High (µs)
1.3
V
F
- Forward
Voltage
(V)
1.2
1.1
1.0
0.9
0.8
0.7
0.1
iild621_07
T
A
=
85
°C
T
A
=
85
°C
I
F
= 10 mA
V
CC
= 5
V, Vth
= 1.5
V
100
t
PLH
2.0
T
A
=
85
°C
10
t
PHL
1
0.1
1.5
1.0
1
10
100
R
L
- Collector Load Resistor (kΩ)
1
10
I
F
- Forward Current (mA)
100
iild621_10
Fig. 7 - Forward Voltage vs. Forward Current
Fig. 10 - Propagation Delay vs. Collector Load Resistor
Document Number: 83654
Rev. 1.5, 20-Dec-07
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
5
t
PHL
- Propagation High-Low (µs)
1.4
1000
2.5
嵌入式系统
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