MOCD207M, MOCD208M — Dual-channel Phototransistor Small Outline Surface Mount Optocouplers
April 2013
MOCD207M, MOCD208M
Dual-channel Phototransistor Small Outline Surface
Mount Optocouplers
Features
■
Dual Channel Optocoupler
■
Convenient Plastic SOIC-8 Surface Mountable
■
■
■
■
■
■
Description
The MOCD207M/MOCD208M consist of two silicon
phototransistors optically coupled to two GaAs infrared
LEDs. These devices are constructed in a small outline
surface mount package which conforms to the standard
SOIC-8 footprint.
Package Style
Two Channels in One Compact Surface Mount
Package
Closely Matched Current Transfer Ratios to Minimize
Unit-to-Unit Variation
Minimum V
(BR)CEO
of 70 V Guaranteed
Standard SOIC-8 Footprint, with 0.050” Lead Spacing
High Input-Output Isolation of 2500
V
AC(rms)
Guaranteed
Meets U.L. Regulatory Requirements, File #E90700,
Volume 2
Applications
■
Feedback Control Circuits
■
Interfacing and Coupling Systems of Different
Potentials and Impedances
■
General Purpose Switching Circuits
■
Monitor and Detection Circuits
Schematic
Package Outline
ANODE 1 1
8 COLLECTOR 1
CATHODE 1 2
7 EMITTER 1
Figure 2. Package Outline
ANODE 2 3
6 COLLECTOR 2
CATHODE 2 4
5 EMITTER 2
Figure 1. Schematic
©2003 Fairchild Semiconductor Corporation
MOCD207M, MOCD208M Rev. 1.0.7
www.fairchildsemi.com
MOCD207M, MOCD208M — Dual-channel Phototransistor Small Outline Surface Mount Optocouplers
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
T
A
= 25°C unless otherwise specified.
Symbol
Emitter
I
F
I
F
(pk)
V
R
P
D
Detector
V
CEO
V
CBO
V
ECO
I
C
P
D
Total Device
V
ISO
P
D
T
A
T
stg
T
L
Rating
Forward Current – Continuous
Forward Current – Peak (PW = 100 µs, 120 pps)
Reverse Voltage
LED Power Dissipation @ T
A
= 25°C
Derate above 25°C
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Collector Voltage
Collector Current-Continuous
Detector Power Dissipation @ T
A
= 25°C
Derate above 25°C
Input-Output Isolation Voltage
(1, 2)
(f = 60 Hz, t = 1 minute)
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
Ambient Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature (1/16” from case,
10 second duration)
Value
60
1.0
6.0
90
0.8
70
70
7.0
150
150
1.76
2500
250
2.94
-40 to +100
-40 to +125
260
Unit
mA
A
V
mW
mW/°C
V
V
V
mA
mW
mW/°C
Vac(rms)
mW
mW/°C
°C
°C
°C
©2003 Fairchild Semiconductor Corporation
MOCD207M, MOCD208M Rev. 1.0.7
www.fairchildsemi.com
2
MOCD207M, MOCD208M — Dual-channel Phototransistor Small Outline Surface Mount Optocouplers
Electrical Characteristics
T
A
= 25°C unless otherwise specified
(3)
Symbol
Emitter
V
F
I
R
C
Detector
I
CEO
I
CEO
Parameter
Input Forward Voltage
Reverse Leakage Current
Capacitance
Collector-Emitter Dark Current
Test Conditions
I
F
= 30 mA
V
R
= 6.0 V
Device
All
All
All
Min. Typ.* Max.
1.25
0.001
18
1.0
1.0
70
7.0
100
10
7.0
100
40
34
13
0.4
3.0
2.8
1.6
2.2
2500
10
11
0.2
200
125
50
1.55
100
Unit
V
µA
pF
nA
µA
V
V
pF
%
V
CE
= 10 V, T
A
= 25°C
V
CE
= 10 V, T
A
= 100°C
I
C
= 100 µA
I
E
= 100 µA
f = 1.0 MHz, V
CE
= 0 V
I
F
= 10 mA, V
CE
= 5 V
I
F
= 1 mA, V
CE
= 5 V
All
All
All
All
All
MOCD207M
MOCD208M
MOCD207M
MOCD208M
All
All
All
All
All
All
All
All
V
(BR)CEO
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
Emitter-Collector Breakdown
Voltage
C
CE
Coupled
CTR
Current Transfer Ratio,
Collector to Emitter
(4)
Collector-Emitter Capacitance
V
CE (sat)
Collector-Emitter Saturation
Voltage
t
on
t
off
t
r
t
f
V
ISO
R
ISO
C
ISO
Turn-On Time
Turn-Off Time
Rise Time
Fall Time
Isolation Surge Voltage
(1)(2)
Isolation Resistance
(2)
Isolation Capacitance
(2)
I
C
= 2.0 mA, I
F
= 10 mA
I
C
= 2.0 mA, V
CC
= 10 V,
R
L
= 100
Ω
I
C
= 2.0 mA, V
CC
= 10 V,
R
L
= 100
Ω
I
C
= 2.0 mA, V
CC
= 10 V,
R
L
= 100
Ω
I
C
= 2.0 mA, V
CC
= 10 V,
R
L
= 100
Ω
f = 60 Hz, t = 1 minute,
I
I-O
≤
2 µA
V
I-O
= 500 V
V
I-O
= 0 V, f = 1 MHz
V
µs
µs
µs
µs
Vac(rms)
Ω
pF
*Typical values at T
A
= 25°C
Notes:
1. Input-Output Isolation Voltage, V
ISO
, is an internal device dielectric breakdown rating.
2. For this test, pins 1, 2, 3 and 4 are common and pins 5, 6, 7 and 8 are common.
3. Always design to the specified minimum/maximum electrical limits (where applicable).
4. Current Transfer Ratio (CTR) = I
C
/ I
F
x 100%.
©2003 Fairchild Semiconductor Corporation
MOCD207M, MOCD208M Rev. 1.0.7
www.fairchildsemi.com
3
MOCD207M, MOCD208M — Dual-channel Phototransistor Small Outline Surface Mount Optocouplers
Typical Performance Curves
1.8
10
1.7
1.6
I
C
- OUTPUT COLLECTOR CURRENT (NORMALIZED)
V
F
- FORWARD VOLTAGE (V)
1.5
1
V
CE
= 5 V
NORMALIZED TO I
F
= 10 mA
1.4
T
A
= -55°C
1.3
T
A
= 25°C
1.2
0.1
1.1
T
A
= 100°C
1.0
1
10
100
I
F
- LED FORWARD CURRENT (mA)
Figure 3. LED Forward Voltage vs. Forward Current
0.01
0.1
1
10
100
I
F
- LED INPUT CURRENT (mA)
10
Figure 4. Output Curent vs. Input Current
I
C
- OUTPUT COLLECTOR CURRENT (NORMALIZED)
1.6
I
C
- OUTPUT COLLECTOR CURRENT (NORMALIZED)
1.4
1.2
1.0
1
0.8
0.6
0.4
0.2
I
F
= 10 mA
NORMALIZED TO V
CE
= 5 V
0.0
0
1
2
3
4
5
6
7
8
9
10
NORMALIZED TO T
A
= 25
o
C
0.1
-80
-60
-40
-20
0
20
40
60
o
80
100
120
T
A
- AMBIENT TEMPERATURE ( C)
V
CE
- COLLECTOR -EMITTER VOLTAGE (V)
Figure 5. Output Current vs. Ambient Temperature
10000
Figure 6. Output Current vs. Collector-Emitter Voltage
I
CEO
- COLLECTOR -EMITTER DARK CURRENT (nA)
1000
V
CE
= 10 V
100
10
1
0.1
0
20
40
60
o
80
100
T
A
- AMBIENT TEMPERATURE ( C)
Figure 7. Dark Current vs. Ambient Temperature
©2003 Fairchild Semiconductor Corporation
MOCD207M, MOCD208M Rev. 1.0.7
www.fairchildsemi.com
4
MOCD207M, MOCD208M — Dual-channel Phototransistor Small Outline Surface Mount Optocouplers
Package Dimensions
8-pin SOIC Surface Mount
8
0.164 (4.16)
0.144 (3.66)
1
SEATING PLANE
0.202 (5.13)
0.182 (4.63)
0.143 (3.63)
0.123 (3.13)
0.010 (0.25)
0.006 (0.16)
0.021 (0.53)
0.011 (0.28)
0.050 (1.27) Typ.
Lead Coplanarity: 0.004 (0.10) MAX
0.008 (0.20)
0.003 (0.08)
0.244 (6.19)
0.224 (5.69)
Recommended Pad Layout
0.024 (0.61)
0.060 (1.52)
0.275 (6.99)
0.155 (3.94)
0.050 (1.27)
Dimensions in inches (mm).
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions,
specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/
©2003 Fairchild Semiconductor Corporation
MOCD207M, MOCD208M Rev. 1.0.7
www.fairchildsemi.com
5
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