SE1470
AlGaAs Infrared Emitting Diode
FEATURES
•
Compact metal can coaxial package
•
24¡ (nominal) beam angle
•
880 nm wavelength
•
Higher output power than GaAs at equivalent
drive currents
•
Wide operating temperature range
(- 55¡C to +125¡C)
•
Mechanically and spectrally matched to SD1420
photodiode, SD1440 phototransistor and
SD1410 photodarlington
INFRA-63.TIF
DESCRIPTION
The SE1470 is a high intensity aluminum gallium
arsenide infrared emitting diode mounted in a glass
lensed metal can coaxial package. The package may
have a tab or second lead welded to the can as an
optional feature (SE1470-XXXL). Both leads are flexible
and may be formed as required to fit various mounting
configurations. These devices typically exhibit 70%
greater power intensity than gallium arsenide devices at
the same forward current.
OUTLINE DIMENSIONS
in inches (mm)
Tolerance
3 plc decimals
±0.005(0.12)
2 plc decimals
±0.020(0.51)
SE1470-XXX
.091(2.26)
CATHODE (CASE)
ANODE
.020(0.51)
.062(1.57) DIA
DIA
.079(2.01)
.076(1.93)
.122(3.10)
.106(2.69)
DIA
.010(0.25)
.095(2.41) DIA
1.000(25.40)
MIN
DIM_001a.ds4
SE1470-XXXL
.091(2.26)
CATHODE
.020
(0.51) DIA
~
~
.062(1.57) DIA
ANODE
.079(2.01)
.076(1.93)
.122(3.10)
.106(2.69)
DIA
.010(0.25)
~
~
.020
(0.51) DIA
~
~
.095(2.41) DIA
1.000(25.40)
TYPICAL MIN
DIM_001b.ds4
12
h
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
SE1470
AlGaAs Infrared Emitting Diode
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
TEST CONDITIONS
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Continuous Forward Current
Power Dissipation
Operating Temperature Range
Storage Temperature Range
Soldering Temperature (10 sec)
50 mA
75 mW [À]
-55¡C to 125¡C
-65¡C to 150¡C
260¡C
SCHEMATIC
Notes
1. Derate linearly from 25¡C free-air temperature at the rate of
0.71 mW/¡C.
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
13
SE1470
AlGaAs Infrared Emitting Diode
Fig. 1
Radiant Intensity vs
Angular Displacement
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-40
-30
-20
-10
0
+10 +20 +30 +40
Fig. 2
gra_007.ds4
Radiant Intensity vs
Forward Current
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0
4.0
8.0
12.0
16.0
gra_008.ds4
Normalized radiant intensity
Relative intensity
20.0
Angular displacement - degrees
Fig. 3
Forward Voltage vs
Forward Current
1.6
Forward current - mA
Fig. 4
Forward Voltage vs
Temperature
1.6
gra_201.ds4
gra_202.ds4
Forward voltage - V
Forward voltage - V
1.5
1.4
1.3
1.2
1.1
1.0
0
10
20
30
40
50
1.5
1.4
1.3
1.2
1.1
1.0
-50
I
F
= 20 mA
-25
0
25
50
75
100
125
Forward current - mA
Fig. 5
Spectral Bandwidth
gra_011.ds4
Temperature - °C
Fig. 6
Coupling Characteristics
with SD1440
1.0
gra_012.ds4
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
760
800
840
880
920
960
1000
Normalized light current
Relative intensity
0.8
0.6
0.4
0.2
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Wavelength - nm
Lens-to-lens seperation - inches
14
h
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
SE1470
AlGaAs Infrared Emitting Diode
Fig. 7
Relative Power Output vs
Free Air Temperature
10
5.0
2.0
1.0
0.5
gra_130.ds4
Relative power output
I
F
= 40 mA
I
F
= 30 mA
I
F
= 20 mA
I
F
= 10 mA
0.2
0.1
-50
-25
0
+25
+50
+75
+100
T
A
- Free-air temperature - (°C)
All Performance Curves Show Typical Values
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
15
FPGA/CPLD
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
