TSUS5200, TSUS5201, TSUS5202
www.vishay.com
Vishay Semiconductors
Infrared Emitting Diode, 950 nm, GaAs
FEATURES
•
•
•
•
•
•
•
•
•
•
•
Package type: leaded
Package form: T-1¾
Dimensions (in mm): Ø 5
Leads with stand-off
Peak wavelength:
λ
p
= 950 nm
High reliability
Angle of half intensity:
ϕ
= ± 15°
Low forward voltage
Suitable for high pulse current operation
Good spectral matching with Si photodetectors
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
94 8390
DESCRIPTION
TSUS5200 is an infrared, 950 nm emitting diode in GaAs
technology molded in a blue-gray tinted plastic package.
Note
**
Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• Infrared remote control and free air transmission systems
with low forward voltage and small package requirements
• Emitter in transmissive sensors
• Emitter in reflective sensors
PRODUCT SUMMARY
COMPONENT
TSUS5200
TSUS5201
TSUS5202
I
e
(mW/sr)
20
25
30
ϕ
(deg)
± 15
± 15
± 15
λ
P
(nm)
950
950
950
t
r
(ns)
800
800
800
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
TSUS5200
TSUS5201
TSUS5202
Note
• MOQ: minimum order quantity
PACKAGING
Bulk
Bulk
Bulk
REMARKS
MOQ: 4000 pcs, 4000 pcs/bulk
MOQ: 4000 pcs, 4000 pcs/bulk
MOQ: 4000 pcs, 4000 pcs/bulk
PACKAGE FORM
T-1¾
T-1¾
T-1¾
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Rev. 2.3, 24-Aug-11
TEST CONDITION
SYMBOL
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
5
150
300
2.5
170
100
- 40 to + 85
- 40 to + 100
260
230
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
t
p
/T = 0.5, t
p
= 100 μs
t
p
= 100 μs
t
≤
5 s, 2 mm from case
J-STD-051, leads 7 mm, soldered on PCB
Document Number: 81055
1
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TSUS5200, TSUS5201, TSUS5202
www.vishay.com
Vishay Semiconductors
180
120
100
80
60
P
V
- Power Dissipation (mW)
160
140
120
100
80
60
40
20
0
0
10
20 30
40
50
60
70 80
90
100
21314
R
thJA
= 230 K/W
I
F
- Forward Current (mA)
R
thJA
= 230 K/W
40
20
0
0
10
20 30 40
50 60 70 80
90 100
21313
T
amb
- Ambient Temperature (°C)
T
amb
- Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 1 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of V
F
Reverse current
Junction capacitance
Temperature coefficient of
φ
e
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of
λ
p
Rise time
Fall time
Virtual
source diameter
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 1.5 A
I
F
= 100 mA
I
F
= 1.5 A
TEST CONDITION
I
F
= 100 mA, t
p
= 20 ms
I
F
= 100 mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
I
F
= 20 mA
SYMBOL
V
F
TK
VF
I
R
C
j
TKφ
e
ϕ
λ
p
Δλ
TKλ
p
t
r
t
r
t
f
t
f
d
30
- 0.8
± 15
950
50
0.2
800
400
800
400
3.8
MIN.
TYP.
1.3
- 1.3
100
MAX.
1.7
UNIT
V
mV/K
μA
pF
%/K
deg
nm
nm
nm/K
ns
ns
ns
ns
mm
Rev. 2.3, 24-Aug-11
Document Number: 81055
2
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TSUS5200, TSUS5201, TSUS5202
www.vishay.com
Vishay Semiconductors
PART
TSUS5200
TSUS5201
TSUS5202
TSUS5200
SYMBOL
V
F
V
F
V
F
I
e
I
e
I
e
I
e
I
e
I
e
φ
e
φ
e
φ
e
10
15
20
95
120
170
MIN.
TYP.
2.2
2.2
2.2
20
25
30
180
230
280
13
14
15
MAX.
3.4
3.4
2.7
50
50
50
UNIT
V
V
V
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW
mW
mW
TYPE DEDICATED CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
TEST CONDITION
I
F
= 1.5 A, t
p
= 100 μs
I
F
= 100 mA, t
p
= 20 ms
Radiant intensity
I
F
= 1.5 A, t
p
= 100 μs
TSUS5201
TSUS5202
TSUS5200
TSUS5201
TSUS5202
TSUS5200
Radiant power
I
F
= 100 mA, t
p
= 20 ms
TSUS5201
TSUS5202
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
10
1
I
F
- Forward Current (A)
1.2
V
F rel
- Relative Forward Voltage (V)
I
FSM
= 2.5 A ( Single Pulse )
t
p
/T = 0.01
10
0
0.05
0.1
0.5
1.0
10
-1
10
-2
1.1
I
F
= 10 mA
1.0
0.9
0.8
0.7
10
-1
10
0
10
1
10
2
94 7990
0
20
40
60
80
100
94 7989
t
p
- Pulse Duration (ms)
T
amb
- Ambient Temperature (°C)
Fig. 2 - Pulse Forward Current vs. Pulse Duration
Fig. 4 - Relative Forward Voltage vs. Ambient Temperature
10
4
10
3
10
2
10
1
10
0
10
-1
94 7996
1000
I
e
- Radiant Intensity (mW/sr)
I
F
- Forward Current (mA)
100
TSUS 5202
TSUS5200
10
1
0
1
2
3
4
94 7991
TSUS 5201
10
0
10
1
10
2
10
3
I
F
- Forward Current (mA)
10
4
V
F
- Forward Voltage (V)
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 5 - Radiant Intensity vs. Forward Current
Rev. 2.3, 24-Aug-11
Document Number: 81055
3
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TSUS5200, TSUS5201, TSUS5202
www.vishay.com
Vishay Semiconductors
1.25
1000
Φ
- Radiant Power (mW)
e
Φ
e rel
- Relative Radiant Power
TSUS 5202
100
TSUS5200
10
1.0
0.75
0.5
1
0.25
I
F
= 100 mA
0
900
950
λ
- Wavelength (nm)
1000
0.1
10
0
94 7992
10
1
10
2
10
3
I
F
- Forward Current (mA)
10
4
94 7994
Fig. 6 - Radiant Power vs. Forward Current
1.6
Fig. 8 - Relative Radiant Power vs. Wavelength
0°
10°
20°
30°
1.2
I
e rel
;
Φ
e rel
I
F
= 20 mA
0.8
I
e rel
- Relative Radiant Intensity
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.4
0
- 10 0 10
94 7993
50
100
140
94 7995
T
amb
- Ambient Temperature (°C)
0.6
0.4
0.2
0
0.2
0.4
0.6
Fig. 7 - Relative Radiant Intensity/Power vs. Ambient Temperature
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
PACKAGE DIMENSIONS
in millimeters
A
C
Ø 5.8 ± 0.15
R 2.49 (sphere)
7.7 ± 0.15
12.5 ± 0.3
8.7 ± 0.3
(4.7)
35.5 ± 0.55
< 0.7
Area not plane
1.1 ± 0.25
Ø 5 ± 0.15
1 min.
0.15
0.5 + 0.05
-
2.54 nom.
+ 0.15
0.5 - 0.05
technical drawings
according to DIN
specifications
6.544-5258.02-4
Issue: 7; 23.07.10
95 10916
Rev. 2.3, 24-Aug-11
Document Number: 81055
4
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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www.vishay.com
Vishay
Disclaimer
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Revision: 08-Feb-17
1
Document Number: 91000