Freescale Semiconductor
Technical Data
Replaced by MRF6S18060NR1/NBR1. There are no form, fit or function changes with
this part replacement. N suffix added to part number to indicate transition to lead - free
terminations.
Document Number: MRF6S18060
Rev. 2, 5/2006
RF Power Field Effect Transistors
MRF6S18060MR1
MRF6S18060MBR1
1800 - 2000 MHz, 60 W, 26 V
GSM/GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and
multicarrier amplifier applications.
GSM Application
•
Typical GSM Performance: V
DD
= 26 Vdc, I
DQ
= 600 mA, P
out
= 60 Watts
CW, Full Frequency Band (1805 - 1880 MHz or 1930 - 1990 MHz)
Power Gain — 15 dB
Drain Efficiency - 50%
GSM EDGE Application
•
Typical GSM EDGE Performance: V
DD
= 26 Volts, I
DQ
= 450 mA,
P
out
= 25 Watts Avg., Full Frequency Band (1805 - 1880 MHz or
1930 - 1990 MHz)
Power Gain — 15.5 dB
Spectral Regrowth @ 400 kHz Offset = - 62 dBc
Spectral Regrowth @ 600 kHz Offset = - 76 dBc
EVM — 2% rms
•
Capable of Handling 5:1 VSWR, @ 26 Vdc, 1990 MHz, 60 Watts CW
Output Power
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
200°C Capable Plastic Package
•
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
- 0.5, +68
- 0.5, +12
216
1.2
- 65 to +175
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
ARCHIVE INFORMATION
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF6S18060MR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF6S18060MBR1
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 60 W CW
Case Temperature 77°C, 25 W CW
Symbol
R
θJC
Value
(1)
0.81
0.95
Unit
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF6S18060MR1 MRF6S18060MBR1
1
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1B (Minimum)
A (Minimum)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 200
μAdc)
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 600 mAdc)
Drain- Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
Dynamic Characteristics
Reverse Transfer Capacitance
(1)
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Power Gain
Drain Efficiency
Input Return Loss
P
out
@ 1 dB Compression Point
1. Part is internally matched both on input and output.
C
rss
—
1.5
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
1
2
—
—
2
2.8
0.24
5.3
3
4
—
—
Vdc
Vdc
Vdc
S
Symbol
I
DSS
I
DSS
I
GSS
Min
—
—
—
Typ
—
—
—
Max
10
1
1
Unit
μAdc
μAdc
μAdc
ARCHIVE INFORMATION
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 26 Vdc, I
DQ
= 600 mA, P
out
= 60 W, f = 1930 MHz, f = 1990 MHz
G
ps
η
D
IRL
P1dB
14
48
—
60
15
50
- 12
65
17
—
-9
—
dB
%
dB
W
(continued)
MRF6S18060MR1 MRF6S18060MBR1
2
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical GSM EDGE Performances
(In Freescale Broadband Test Fixture, 50
οhm
system) V
DD
= 26 Vdc, I
DQ
= 450 mA,
P
out
= 25 W Avg., 1805 MHz<Frequency<1880 MHz or 1930 MHz<Frequency<1990 MHz
Power Gain
Drain Efficiency
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
G
ps
η
D
EVM
SR1
SR2
—
—
—
—
—
15.5
32
2
- 62
- 76
—
—
—
—
—
dB
%
% rms
dBc
dBc
Typical CW Performances
(In Freescale Broadband Test Fixture, 50
οhm
system) V
DD
= 26 Vdc, I
DQ
= 600 mA, P
out
= 60 W,
1805 MHz<Frequency<1880 MHz or 1930 MHz<Frequency<1990 MHz
Power Gain
Drain Efficiency
G
ps
η
D
IRL
P1dB
—
—
—
—
15
50
- 12
65
—
—
—
—
dB
%
dB
W
ARCHIVE INFORMATION
Input Return Loss
P
out
@ 1 dB Compression Point, CW
MRF6S18060MR1 MRF6S18060MBR1
RF Device Data
Freescale Semiconductor
3
ARCHIVE INFORMATION
V
BIAS
R1
R2
C1
Z6
Z13
R3
RF
INPUT
Z8
Z1
C3
Z2
Z3
C5
C6
Z4
Z5
Z7
C8
DUT
Z9
Z10
C7
Z11
C4
C2
C9
C10
+
C11
V
SUPPLY
Z12
RF
OUTPUT
ARCHIVE INFORMATION
* Variable for tuning
Figure 1. MRF6S18060MR1(MBR1) Test Circuit Schematic — 1900 MHz
Table 6. MRF6S18060MR1(MBR1) Test Circuit Component Designations and Values — 1900 MHz
Part
C1, C2, C3, C4
C5
C6
C7, C8
C9, C10
C11
R1, R2
R3
Description
6.8 pF 100B Chip Capacitors
1.5 pF 100B Chip Capacitor
1.8 pF 100B Chip Capacitor
1 pF 100B Chip Capacitors
10
μF
Chip Capacitors (2220)
220
μF,
63 V Electrolytic Capacitor, Radial
10 kW, 1/4 W Chip Resistors (1206)
10
W,
1/4 W Chip Resistor (1206)
Part Number
100B6R8CW
100B1R5BW
100B1R8BW
100B1R0BW
C5750X5R1H106MT
13668221
Manufacturer
ATC
ATC
ATC
ATC
TDK
Philips
MRF6S18060MR1 MRF6S18060MBR1
4
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Z1
Z2*
Z3*
Z4*
Z5
Z6
Z7, Z8
0.250″ x 0.083″ Microstrip
0.950″ x 0.083″ Microstrip
0.250″ x 0.083″ Microstrip
0.315″ x 0.083″ Microstrip
0.365″ x 1.000″ Microstrip
0.680″ x 0.080″ Microstrip
0.115″ x 1.000″ Microstrip
Z9
Z10*
Z11*
Z12
Z13
PCB
0.485″ x 1.000″ Microstrip
0.500″ x 0.083″ Microstrip
0.895″ x 0.083″ Microstrip
0.250″ x 0.083″ Microstrip
0.200″ x 0.080″ Microstrip
Taconic TLX8 - 0300, 0.030″,
ε
r
= 2.55
C11
V
GS
R1
R2
C1
C2
C9
R3
C5
CUT OUT AREA
C7
C10
V
DS
C3
C6
C8
C4
ARCHIVE INFORMATION
MRF6S18060N/NB
Rev. 0
Figure 2. MRF6S18060MR1(MBR1) Test Circuit Component Layout — 1900 MHz
MRF6S18060MR1 MRF6S18060MBR1
RF Device Data
Freescale Semiconductor
5
ARCHIVE INFORMATION
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