Switching Diodes
MA4X174
(MA174)
Silicon planar type
For small power rectification and surge absorption
■
Features
•
Two isolated elements contained in one package, allowing high-
density mounting
•
High breakdown voltage: V
R
=
200 V
2
(0.2)
2.90
+0.20
–0.05
1.9
±0.2
(0.95) (0.95)
3
4
1.50
+0.25
–0.05
2.8
+0.2
–0.3
Unit: mm
0.16
+0.10
–0.06
0.5R
1
(0.65)
5˚
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Reverse voltage
Repetitive peak reverse voltage
Non-repetitive peak reverse
surge voltage
Output current
Single
Double
Repetitive peak
forward current
Single
Double
I
FSM
T
j
T
stg
I
FRM
Symbol
V
R
V
RRM
V
RSM
I
O
Rating
200
250
300
100
75
225
170
500
375
125
−55
to
+125
°C
°C
mA
mA
Unit
V
V
V
mA
0.60
+0.10
–0.05
10˚
0.40
+0.10
–0.05
+0.2
0 to 0.1
1.1
–0.1
EIAJ: SC-61
Marking Symbol: M2O
Internal Connection
3
4
Non-repetitive peak Single
forward surge current
*
Double
Junction temperature
Storage temperature
Note) *: t = 1 s
2
1
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Forward voltage
Reverse current
Symbol
V
F
I
R
Conditions
I
F
= 100 mA
V
R
= 200 V
Min
Typ
Max
1.3
1.0
Unit
V
µA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 3 MHz.
Note) The part number in the parenthesis shows conventional part number.
Publication date: March 2004
SKF00046BED
1.1
+0.3
–0.1
1: Cathode 1
2: Cathode 2
3: Anode 2
4: Anode 1
Mini4-G1 Package
0.4
±0.2
1
MA4X174
I
F
V
F
10
3
I
R
V
R
10
2
T
a
=
125°C
V
F
T
a
1.6
10
2
10
Forward current I
F
(mA)
10
Reverse current I
R
(
µA
)
1
75°C
Forward voltage V
F
(V)
1.2
0.8
I
F
=
100 mA
10 mA
3 mA
1 T
a
=
125°C
75°C
10
−1
25°C
−20°C
10
−1
25°C
10
−2
0.4
10
−2
0
0.2
0.4
0.6
0.8
1.0
1.2
10
−3
0
40
80
120
160
200
240
0
−40
0
40
80
120
160
200
Forward voltage V
F
(V)
Reverse voltage V
R
(V)
Ambient temperature T
a
(
°C
)
I
R
T
a
10
2
V
R
=
200 V 100 V
10 V
2.4
C
t
V
R
10
3
f
=
1 MHz
T
a
=
25°C
I
F(surge)
t
W
T
a
=
25°C
I
F(surge)
t
W
Terminal capacitance C
t
(pF)
10
Forward surge current I
F(surge)
(A)
2.0
Reverse current I
R
(
µA
)
10
2
Non repetitive
1.6
1
1.2
10
10
−1
0.8
10
−2
1
0.4
10
−3
−40
0
0
40
80
120
160
200
0
40
80
120
160
200
240
10
−1
10
−1
1
10
Ambient temperature T
a
(
°C
)
Reverse voltage V
R
(V)
Pulse width t
W
(ms)
2
SKF00046BED
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
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the products or technical information described in this material and controlled under the "Foreign Exchange
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applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
•
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
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permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP
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