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RPI-303

产品描述Optical Switches, Transmissive, Phototransistor Output PHOTOINTERRUPTER Height - 20.75mm
产品类别光电子/LED    光电   
文件大小42KB,共3页
制造商ROHM(罗姆半导体)
官网地址https://www.rohm.com/
标准
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RPI-303概述

Optical Switches, Transmissive, Phototransistor Output PHOTOINTERRUPTER Height - 20.75mm

RPI-303规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
Reach Compliance Codecompliant
Coll-Emtr Bkdn Voltage-Min30 V
配置SINGLE
最大暗电源500 nA
最大正向电流0.05 A
间隙大小3 mm
JESD-609代码e1
功能数量1
最大通态电流0.002 A
最大通态电压30 V
标称通态集电极电流0.2 mA
最高工作温度85 °C
最低工作温度-25 °C
光电设备类型TRANSISTOR OUTPUT SLOTTED SWITCH
输出电路类型Transistor
标称槽宽3 mm
端子面层Tin/Silver/Copper (Sn/Ag/Cu)
Base Number Matches1

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RPI-303
Photointerrupter, Taller type
External dimensions (Unit : mm)
1.7
Through hole
5.7
1.9
4.2
4-
φ
0.8
(0.4)
Absolute maximum ratings (Ta=25°C)
Parameter
Input (LED)
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
Soldering temperture
1.6mm from the body bottom.
2.5
Symbol
I
F
V
R
P
D
V
CEO
V
ECO
I
C
P
C
Topr
Tstg
Tsol
Limits
50
5
80
30
4.5
30
80
−25
to
+85
−30
to
+85
260 / 3
Unit
mA
V
mW
V
V
mA
mW
Applications
Min.2.1
Reel count sensor for VCR
DVD
7.3
6.3
3.0
2.3
C0.3
1.4
Optical axis center
Output
photo-
transistor
slope 1˚
)
Features
1) Tall package (Optical axis 20.75mm).
2) Small package due to the double-layer
mold.
3) PPS package for heat resistance.
R0.3
slope 5˚
2.5
(
(20.75)
17.45
17.4
°C
/ s
+0
-0.2
°C
22
2
°C
Electrical and optical characteristics (Ta=25°C)
Parameter
Output Input
Photo
Infrared Transfer
transistor light
characteristics charac- charac-
teristics teristics
emitter
diode
Forward voltage
Reverse current
Dark current
Peak sensitivity wavelength
Collector current
Collector-emitter saturation voltage
Response time
Symbol
V
F
I
R
I
CEO
Min.
0.2
Typ.
1.3
800
0.7
10
10
1
950
10
800
Max.
1.6
10
0.5
2.0
0.4
Unit
V
µA
µA
nm
mA
V
µs
µs
MHz
nm
µs
nm
V
CE
=
5V, I
F
=
20mA
I
F
=
20mA, I
C
=
0.1mA
V
CC
=
5V, I
F
=
20mA, R
L
=
100Ω
I
F
=
50mA
V
R
=
5V
V
CE
=
10V
Conditions
1.5
11
3.6
0.2
4-0.2
+0.1
0
λ
P
I
C
V
CE(sat)
tr
tf
f
C
(5.7)
(4)
1.5
0.5
4-0.5
±
0.1
(2.5)
Rise time
Fall time
Anode
Collector
Cut-off frequency
Peak light emitting wavelength
Response time
Maximum sensitivity wavelength
tr tf
This product is not designed to be protected against electromagnetic wave.
V
CC
=
5V, I
C
=
1mA, R
L
=
100Ω
2.7
λ
P
Non-coherent Infrared light emitting diode used.
I
F
=
50mA
λ
P
Cathode
Emitter
Notes:
1.
Unspecified tolerance
shall be
±0.2
.
2. Dimension in parenthesis are
show for reference.
Electrical and optical characteristics curves
RELATIVE COLLECTOR CURRENT : Ic (%)
1000
FORWARD CURRENT : I
F
(
mA
)
FORWARD CURRENT : I
F
(mA)
50
40
30
20
10
0
40
75
d
1.6
DARK CURRENT : I
D
(nA)
RESPONSE TIME : t (µs)
25°C
0°C
25°C
50°C
75°C
COLLECTOR CURRENT : Ic (mA)
100
50
2.0
V
CE
=5V
Ta=25°C
V
CC
=
5V
1000
0.2
3.5
slope 10˚
1.7
4.2
1.2
1
100
R
L
=1kΩ
R
L
=
500Ω
10
R
L
=
100Ω
100
30
1.2
V
CE
=
10V
V
CE
=
20V
V
CE
=
30V
10
50
20
0.8
1
25
10
0.4
0.1
0
0
10
20
30
40
50
1
0.1
1
10
100
0
0
1.0
2.0
3.0
4.0
−20
0
20
40
60
80
100
0
0
0.4
0.8
1.2
1.6
2.0
−25
0
25
50
75
100
DISTANCE : d (mm)
AMBIENT TEMPERATURE : Ta (°C)
FORWARD VOLTAGE : V
F
(
V
)
FORWARD CURRENT : I
F
(mA)
COLLECTOR CURRENT : Ic (mA)
AMBIENT TEMPERATURE : Ta (°C)
Fig.1 Relative output vs. distance ( )
RELATIVE COLLECTOR CURRENT : Ic (%)
Fig.2 Forward current falloff
Fig.3 Forward current vs. forward voltage
RELATIVE COLLECTOR CURRENT : Ic (%)
Fig.7 Collector current vs. forward current
Fig.8 Response time vs.
collector current
Fig.9 Dark current vs. ambient
temperature
120
Input
COLLECTOR CURRENT : I
C
(mA)
V
CC
100
100
d
100
2.5
I
F
=50mA
40mA
30mA
75
80
60
2
P
D
P
C
1.5
Input
Output
R
L
90%
10%
50
40
50
20mA
1
10mA
Output
t
d
t
r
t
d
: Delay time
t
f
25
20
0
0.5
0
0
0.5
1.0
1.5
2.0
2.5
3.0
20
0
20
40
60
80
100
0
25
0
25
50
75
100
0
0
t
r
: Rise time (time for output current to rise from
2
4
6
8
10
10% to 90% of peak current)
t
f
: Fall time (time for output current to fall from 90%
DISTANCE : d (mm)
AMBIENT TEMPERATURE : Ta (°C)
COLLECTOR-EMITTER VOLTAGE : V
CE
(
V)
to 10% of peak current)
Fig.4 Relative output vs. distance (
)
Fig.4 Power dissipation / collector power
dissipation vs. ambient temperature
Fig.5 Relative output vs. ambient
temperature
Fig.10 Output characteristics
Fig.11 Response time measurement circuit

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