VOS617A
www.vishay.com
Vishay Semiconductors
Optocoupler, Phototransistor Output,
SSOP-4, Half Pitch, Mini-Flat Package
FEATURES
• High CTR with low input current
A
C
1
2
4
3
C
E
• Low profile package (half pitch)
• High collector emitter voltage, V
CEO
= 80 V
• Isolation test voltage = 3750 V
RMS
• Low coupling capacitance
• High common mode transient immunity
22628-1
DESCRIPTION
The VOS617A series has a GaAs infrared emitting diode
emitter, which is optically coupled to a silicon planar
phototransistor detector, and is incorporated in a 4-pin
50 mil lead pitch mini-flat package.
It features a high current transfer ratio at low input current,
low coupling capacitance, and high isolation voltage.
The coupling devices are designed for signal transmission
between two electrically separated circuits.
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Telecom
• Industrial controls
• Battery powered equipment
• Office machines
• Programmable controllers
AGENCY APPROVALS
Safety application model number covering all products in
this datasheet is VOS617A. This model number should be
used when consulting safety agency documents.
• UL1577, file no. E52744
• cUL
• DIN EN 60747-5-5 (VDE 0884-5), available with option 1
• FIMKO EN 60065, EN 60950-1
• CQC GB4943.1-2011 and GB8898-2011 (suitable for
installation altitude below 2000 m)
ORDERING INFORMATION
V
O
S
6
1
7
A
-
#
CTR
BIN
X
0
0
1
T
TAPE
AND
REEL
SSOP-4
PART NUMBER
PACKAGE OPTION
≥
5 mm
AGENCY CERTIFIED/
PACKAGE
UL, cUL, FIMKO, CQC
SSOP-4,
50 mil pitch
UL, CUL, FIMKO,
CQC, VDE (option 1)
SSOP-4,
50 mil pitch
50 to 600
VOS617AT
50 to 600
VOS617A-
X001T
63 to 125
VOS617A-2T
63 to 125
VOS617A-
2X001T
100 to 200
VOS617A-3T
100 to 200
VOS617A-
3X001T
CTR (%)
5 mA
160 to 320
VOS617A-4T
160 to 320
VOS617A-
4X001T
80 to 160
VOS617A-7T
80 to 160
VOS617A-
7X001T
130 to 260
VOS617A-8T
130 to 260
VOS617A-
8X001T
200 to 400
VOS617A-9T
200 to 400
VOS617A-
9X001T
Note
• Additional options may be possible, please contact sales office.
Rev. 1.4, 08-Jan-14
Document Number: 83497
1
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VOS617A
www.vishay.com
Vishay Semiconductors
TEST CONDITION
SYMBOL
V
R
P
diss
t
p
≤
10 μs
I
FSM
I
F
V
CEO
V
ECO
I
C
P
diss
VALUE
6
70
1.5
50
80
7
50
150
UNIT
V
mW
A
mA
V
V
mA
mW
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Reverse voltage
Power dissipation
Surge forward current
Forward current
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector current
Power dissipation
COUPLER
Isolation test voltage
between emitter and detector
Total power dissipation
Storage temperature range
Ambient temperature range
Junction temperature
Soldering temperature
(1)
t = 1 min
V
ISO
P
tot
T
stg
T
amb
T
j
3750
170
-55 to +150
-55 to +110
125
260
V
RMS
mW
°C
°C
°C
°C
t = 10 s
T
sld
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted devices.
P
diss
- Collector Power Dissipation (mW)
160
60
I
F
- Forward Current (mA)
- 25
0
25
50
75
100
125
140
120
100
80
60
40
20
0
50
40
30
20
10
0
- 25
0
25
50
75
100
125
T
amb
- Ambient Temperature (°C)
Fig. 1 - Power Dissipation vs. Ambient Temperature
T
amb
- Ambient Temperature (°C)
Fig. 2 - Forward Current vs. Ambient Temperature
Rev. 1.4, 08-Jan-14
Document Number: 83497
2
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VOS617A
www.vishay.com
Vishay Semiconductors
TEST CONDITION
I
F
= 50 mA
V
R
= 6 V
V
R
= 0 V, f = 1 MHz
V
CE
= 10 V
I
C
= 100 μA
I
E
= 10 μA
V
CE
= 5 V, f = 1 MHz
I
F
= 5 mA, I
C
= 2.5 mA
I
F
= 10 mA, V
CC
= 5 V, R
L
= 100
Ω
SYMBOL
V
F
I
R
C
I
I
CEO
BV
CEO
BV
ECO
C
CE
V
CEsat
f
ctr
80
7
5
0.25
155
0.4
MIN.
TYP.
1.18
0.01
7.3
0.3
100
MAX.
1.5
10
UNIT
V
μA
pF
nA
V
V
pF
V
kHz
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Forward voltage
Reverse current
Capacitance
OUTPUT
Collector emitter leakage current
Collector emitter breakdown voltage
Emitter collector breakdown voltage
Collector emitter capacitance
COUPLER
Collector emitter saturation voltage
Cut-off frequency
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
VOS617A
VOS617A-2
VOS617A-3
I
C
/I
F
I
F
= 5 mA, V
CE
= 5 V
VOS617A-4
VOS617A-7
VOS617A-8
VOS617A-9
SYMBOL
CTR
CTR
CTR
CTR
CTR
CTR
CTR
MIN.
50
63
100
160
80
130
200
TYP.
MAX.
600
125
200
320
160
260
400
UNIT
%
%
%
%
%
%
%
SWITCHING CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
NON-SATURATED
Rise and fall time
Fall time
Turn-on time
Turn-off time
SATURATED
Rise and fall time
Fall time
Turn-on time
Turn-off time
I
F
= 1.6 mA, V
CC
= 5 V,
R
L
= 1.9 kΩ
t
r
t
f
t
on
t
off
3
12
4
18
μs
μs
μs
μs
I
C
= 2 mA, V
CC
= 5 V,
R
L
= 100
Ω
t
r
t
f
t
on
t
off
3
3
6
4
μs
μs
μs
μs
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
V
CC
= 5 V
Input pulse
Input
R
L
V
OUT
10 %
Output pulse
90 %
t
r
t
on
t
f
t
off
isfh618a_10
isfh618a_12
Fig. 3 - Test Circuit
Rev. 1.4, 08-Jan-14
Fig. 4 - Test Circuit and Waveforms
Document Number: 83497
3
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VOS617A
www.vishay.com
Vishay Semiconductors
SYMBOL
P
SO
I
si
T
S
CTI
40 % to 60 % RH, AC test of 1 min
V
ISO
V
IOTM
V
IORM
T
amb
= 25 °C, V
DC
= 500 V
T
amb
= 100 °C, V
DC
= 500 V
R
IO
R
IO
VALUE
300
200
150
175
3750
6000
565
≥
10
12
≥
10
11
2
≥
5
≥
5
DTI
≥
0.4
mm
mm
mm
55/110/21
V
RMS
V
peak
V
peak
Ω
Ω
UNIT
mW
mA
°C
SAFETY AND INSULATION RATINGS
PARAMETER
MAXIMUM SAFETY RATINGS
Output safety power
Input safety current
Safety temperature
Comparative tracking index
INSULATION RATED PARAMETERS
Maximum withstanding isolation voltage
Maximum transient isolation voltage
Maximum repetitive peak isolation voltage
Insulation resistance
Isolation resistance
Climatic classification (according to IEC 68 part 1)
Environment (pollution degree in accordance to DIN VDE 0109)
Creepage distance
Clearance distance
Insulation thickness
Note
• As per IEC 60747-5-5, § 7.4.3.8.2, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits.
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
100
55
I
C
- Collector Current (mA)
I
F
- Forward Current (mA)
10
T
amb
= 110 °C
T
amb
= 75 °C
T
amb
= 25 °C
T
amb
= 0 °C
T
amb
= - 55 °C
50
45
40
35
30
25
20
15
10
5
0
0
1
2
3
4
I
F
= 1 mA
I
F
= 35 mA
I
F
= 30 mA
I
F
= 25 mA
I
F
= 20 mA
I
F
= 15 mA
I
F
= 10 mA
I
F
= 5 mA
1
0.1
0.6
0.8
1.0
1.2
1.4
1.6
5
6
7
8
9
10
V
F
- Forward Voltage (V)
Fig. 5 - Forward Voltage vs. Forward Current
V
CE
- Collector Emitter Voltage (non-sat) (V)
Fig. 6 - Collector Current vs. Collector Emitter Voltage
Rev. 1.4, 08-Jan-14
Document Number: 83497
4
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VOS617A
www.vishay.com
Vishay Semiconductors
1.2
10 000
1000
N
CTR
- Normalized CTR (sat)
I
F
= 0 mA
I
F
= 5 mA
1.0
0.8
0.6
0.4
0.2
0
I
CE0
- Leakage Current (nA)
V
CE
= 40 V
100
10
1
0.1
V
CE
= 24 V
V
CE
= 12 V
0.01
0.001
- 60 - 40 - 20 0
20
40
60
80 100 120
Normalized to CTR value:
I
F
= 5 mA, V
CE
= 5 V, T
amb
= 25 °C
- 60 - 40 - 20 0
20
40
60
80 100 120
T
amb
- Ambient Temperature (°C)
Fig. 7 - Leakage Current vs. Ambient Temperature
T
amb
- Ambient Temperature (°C)
Fig. 10 - Normalized Current Transfer Ratio (saturated) vs.
Ambient Temperature
V
CEsat
- Collector Emitter Voltage (V)
14
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
- 60 - 40 - 20 0
20
40
60
80 100 120
I
c
= 1 mA
I
c
= 2 mA
I
F
= 10 mA
I
C
- Collector Current (mA)
I
F
= 10 mA
12
10
8
6
4
2
0
0
0.1
0.2
0.3
0.4
I
F
= 1 mA
I
F
= 5 mA
I
c
= 5 mA
I
F
= 2 mA
V
CE
- Collector Emitter Voltage (V)
Fig. 8 - Collector Current vs. Collector Emitter Voltage
T
amb
- Ambient Temperature (°C)
Fig. 11 - Collector Emitter Voltage vs. Ambient Temperature
N
CTR
- Normalized CTR (non-saturated)
1.2
1.4
N
CTR
- Normalized CTR (NS)
I
F
= 5 mA
1.0
0.8
0.6
0.4
0.2
0
T
amb
= 0 °C
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1
1
T
amb
= 75 °C
T
amb
= 100 °C
Normalized to:
I
F
= 5 mA, V
CE
= 5 V,
T
amb
= 25 °C
10
100
T
amb
= -55 °C
T
amb
= 25 °C
Normalized to CTR value:
I
F
= 5 mA, V
CE
= 5 V, T
amb
= 25 °C
- 60 - 40 - 20 0
20
40
60
80 100 120
T
amb
- Ambient Temperature (°C)
Fig. 9 - Normalized Current Transfer Ratio (non-saturated) vs.
Ambient Temperature
I
F
- Forward Current (mA)
Fig. 12 - Normalized CTR (non-saturated) vs. Forward Current
Rev. 1.4, 08-Jan-14
Document Number: 83497
5
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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