VSMY3940X01
www.vishay.com
Vishay Semiconductors
High Speed Infrared Emitting Diode, 940 nm,
Surface Emitter Technology
FEATURES
• Package type: surface mount
• Package form: PLCC-2
• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75
• AEC-Q101 qualified
• Peak wavelength:
λ
p
= 940 nm
• High reliability
• High radiant power
• High radiant intensity
948553
• Angle of half intensity:
ϕ
= ± 60°
• Suitable for high pulse current operation
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Lead (Pb)-free reflow soldering
DESCRIPTION
As part of the
SurfLight
TM
portfolio, the VSMY3940X01 is an
infrared, 940 nm emitting diode based on surface emitter
technology with high radiant intensity, high optical power
and high speed, molded in a PLCC-2 package for surface
mounting (SMD).
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
RELEASED FOR APPLICATIONS
Infrared radiation source for operation with CMOS cameras
(illumination)
• High speed IR data transmission
• IR touch panels
• 3D TV
• Light curtain
PRODUCT SUMMARY
COMPONENT
VSMY3940X01
I
e
(mW/sr)
15
ϕ
(deg)
± 60
λ
P
(nm)
940
t
r
(ns)
10
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
VSMY3940X01-GS08
VSMY3940X01-GS18
Note
• MOQ: minimum order quantity
PACKAGING
Tape and reel
Tape and reel
REMARKS
MOQ: 7500 pcs, 1500 pcs/reel
MOQ: 8000 pcs, 8000 pcs/reel
PACKAGE FORM
PLCC-2
PLCC-2
Rev. 1.2, 25-Jun-14
Document Number: 84220
1
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSMY3940X01
www.vishay.com
Vishay Semiconductors
TEST CONDITION
SYMBOL
V
R
I
F
t
p
/T = 0.5, t
p
=
100 μs
t
p
= 100 μs
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
acc. figure 10, J-STD-020
J-STD-051, soldered on PCB
T
sd
R
thJA
VALUE
5
100
200
1
190
100
-40 to +85
-40 to +100
260
250
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Forward current
Pulse peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
200
120
P
V
- Power Dissipation (mW)
180
I
F
- Forward Current (mA)
160
140
120
100
80
60
40
20
0
0
20
40
60
80
100
R
thJA
= 250 K/W
100
80
60
40
20
0
0
20
40
60
80
100
R
thJA
= 250 K/W
T
amb
- Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
T
amb
- Ambient Temperature (°C)
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of V
F
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of
φ
e
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of
λ
p
Rise time
Fall time
I
F
= 20 mA
I
F
= 30 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
V
R
= 0 V, f = 1 MHz, E = 0
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 μs
I
F
= 100 mA, t
p
= 20 ms
I
F
= 100 mA
TEST CONDITION
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 μs
I
F
= 100 mA
SYMBOL
V
F
V
F
TK
VF
I
R
C
j
I
e
I
e
φ
e
TKφ
e
ϕ
λ
p
Δλ
TKλ
p
t
r
t
f
920
8
MIN.
TYP.
1.44
2.2
-1.6
not designed for reverse operation
125
15
120
55
-0.25
± 60
940
40
0.25
10
10
960
24
MAX.
1.9
UNIT
V
V
mV/K
μA
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
Rev. 1.2, 25-Jun-14
Document Number: 84220
2
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSMY3940X01
www.vishay.com
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
1000
1000
t
p
= 100 μs
100
Vishay Semiconductors
I
e
- Radiant Intensity (mW/sr)
t
p
= 100 μs
100
I
F
- Forward Current (mA)
10
10
1
1
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0.1
1
10
100
1000
V
F
- Forward Voltage (V)
Fig. 3 - Forward Current vs. Forward Voltage
I
F
- Forward Current (mA)
Fig. 6 - Radiant Intensity vs. Forward Current
I
e, rel
- Relative Radiant Intensity (%)
1.65
120
I
F
= 100 mA
t
p
= 20 ms
110
V
F
- Forward Voltage (V)
1.60
1.55
1.50
1.45
1.40
1.35
1.30
-60 -40 -20
0
20
40
I
F
= 100 mA
t
p
= 20 ms
100
90
80
-60 -40 -20
0
20
40
60
80
100
60
80
100
T
amb
- Ambient Temperature (°C)
Fig. 4 - Forward Voltage vs. Ambient Temperature
T
amb
- Ambient Temperature (°C)
Fig. 7 - Relative Radiant Intensity vs. Ambient Temperature
V
F, rel
- Relative Forward Voltage (%)
110
I
F
= 100 mA
t
p
= 20 ms
I
e, rel
- Relative Radiant Intensity (%)
115
100
90
80
70
60
50
40
30
20
10
0
800
850
900
950
1000
1050
I
F
= 20 mA
105
100
95
90
-60 -40 -20
0
20
40
60
80
100
T
amb
- Ambient Temperature (°C)
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
λ
- Wavelength (nm)
Fig. 8 - Relative Radiant Intensity vs. Wavelength
Rev. 1.2, 25-Jun-14
Document Number: 84220
3
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSMY3940X01
www.vishay.com
Vishay Semiconductors
10°
20°
30°
0°
I
e, rel
- Relative Radiant Intensity
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
PACKAGE DIMENSIONS
in millimeters
3.5 ± 0.2
1.75 ± 0.1
ϕ
- Angular Displacement
technical drawings
according to DIN
specifications
0.9
Pin identification
Mounting Pad Layout
1.2
area covered with
solder resist
2.8 ± 0.15
A
C
2.6 (2.8)
2.2
4
Ø 2.4
1.6 (1.9)
3 + 0.15
Drawing-No.: 6.541-5067.02-4
Issue: 4; 19.07.10
20767
Rev. 1.2, 25-Jun-14
Document Number: 84220
4
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
4
VSMY3940X01
www.vishay.com
SOLDER PROFILE
3.5
3.1
2.2
2.0
Vishay Semiconductors
300
250
255 °C
240 °C
217 °C
max. 260 °C
245 °C
5.75
5.25
3.6
3.4
8.3
7.7
4.0
3.6
Temperature (°C)
200
max. 30 s
150
max. 120 s
100
50
0
0
50
100
150
200
250
300
max. ramp up 3 °C/s max. ramp down 6 °C/s
max. 100 s
1.6
1.4
4.1
3.9
2.05
1.95
1.85
1.65
4.1
3.9
0.25
94 8668
Fig. 12 - Tape Dimensions in mm for PLCC-2
19841
Time (s)
MISSING DEVICES
A maximum of 0.5 % of the total number of components per
reel may be missing, exclusively missing components at the
beginning and at the end of the reel. A maximum of three
consecutive components may be missing, provided this gap
is followed by six consecutive components.
De-reeling direction
Fig. 10 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
94 8158
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 168 h
Conditions: T
amb
< 30 °C, RH < 60 %
Moisture sensitivity level 3, acc. to J-STD-020.
> 160 mm
40 empty
compartments
min. 75 empty
compartments
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
Tape leader
Carrier leader
Carrier trailer
Fig. 13 - Beginning and End of Reel
TAPE AND REEL
PLCC-2 components are packed in antistatic blister tape
(DIN IEC (CO) 564) for automatic component insertion.
Cavities of blister tape are covered with adhesive tape.
The tape leader is at least 160 mm and is followed by a
carrier tape leader with at least 40 empty compartments.
The tape leader may include the carrier tape as long as the
cover tape is not connected to the carrier tape. The least
component is followed by a carrier tape trailer with a least
75 empty compartments and sealed with cover tape.
10.0
9.0
120°
Adhesive tape
4.5
3.5
Blister tape
2.5
1.5
Identification
Label:
Vishay
type
group
tape code
production
code
quantity
13.00
12.75
63.5
60.5
Component cavity
94 8670
Fig. 11 - Blister Tape
180
178
14.4 max.
94 8665
Fig. 14 - Dimensions of Reel-GS08
Rev. 1.2, 25-Jun-14
Document Number: 84220
5
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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