Not for New Design
TSOP35D26
www.vishay.com
Vishay Semiconductors
IR Receiver Modules for 3D Synchronization Signals
FEATURES
• Compliant to proposed CEA-2038 for long
command encoding
• Command driven IR synchronized active
eyewear standard
• Center frequency at 26.2 kHz to reduce
interference with IR remote control signals at
30 kHz to 56 kHz
1
2
3
4
16797
• Package can be used with IR emitters with
wavelength 830 nm as well as standard 940 nm
• Very low supply current and stand-by mode
• Photo detector and preamplifier in one package
• Internal filter for PCM frequency
• Supply voltage range: 2.5 V to 5.5 V
• Improved immunity against modulated light sources
• Insensitive to supply voltage ripple and noise
• Taping available for topview and sideview assembly
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
MECHANICAL DATA
Pinning:
1 = GND, 2 = N.C., 3 = V
S
, 4 = OUT
DESCRIPTION
The TSOP35D26 is an SMD IR receiver module for 3D
synchronization signals. The receiver is designed to operate
at a carrier frequency of 26.2 kHz and a wavelength of 830
nm to avoid interference with standard remote control
systems at 940 nm and 30 kHz to 56 kHz. The TSOP35D26
can receive continuously transmitted signal patterns with a
minimum burst length of 6 cycles and frame rates up to
200 Hz. The circuit provides good suppression of optical
noise from CFLs, LCD backlight and plasma panels.
PARTS TABLE
CARRIER FREQUENCY
26.2 kHz
GOOD NOISE SUPPRESSION AND FAST BURST RATE
TSOP35D26
BLOCK DIAGRAM
3
30 kΩ
V
S
4
Input
AGC
Band
pass
Demo
-
dulator
OUT
APPLICATION CIRCUIT
17170_5
R
1
IR receiver
V
S
Circuit
C
1
OUT
GND
V
O
µC
GND
+ V
S
Transmitter
with
TSALxxxx
1; 2
PIN
16839
Control circuit
GND
R
1
and C
1
are recommended for protection against EOS.
Components should be in the range of 33
Ω
< R
1
< 1 kΩ,
C
1
> 0.1 µF.
Rev. 1.5, 03-Sep-13
1
Document Number: 83468
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Not for New Design
TSOP35D26
www.vishay.com
Vishay Semiconductors
TEST CONDITION
SYMBOL
V
S
I
S
V
O
I
O
T
j
T
stg
T
amb
T
amb
≤
85 °C
P
tot
VALUE
- 0.3 to + 6
3
- 0.3 to (V
S
+ 0.3)
5
100
- 40 to + 100
- 30 to + 85
10
UNIT
V
mA
V
mA
°C
°C
°C
mW
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Supply voltage (pin 3)
Supply current (pin 3)
Output voltage (pin 4)
Output current (pin 4)
Junction temperature
Storage temperature range
Operating temperature range
Power consumption
Note
• Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification
is not implied. Exposure to absolute maximum rating conditions for extended periods may affect the device reliability.
ELECTRICAL AND OPTICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Supply current (pin 3)
Supply voltage
Transmission distance
Output voltage low (pin 4)
Minimum irradiance
Maximum irradiance
Directivity
E
v
= 0, test signal see fig. 1,
IR diode TSHG8400,
I
F
= 250 mA
I
OSL
= 0.5 mA, E
e
= 0.7 mW/m
2
,
test signal see fig. 1
Pulse width tolerance:
t
pi
- 80 μs < t
po
< t
pi
+ 160 μs,
test signal see fig. 1
t
pi
- 80 μs < t
po
< t
pi
+ 160 μs,
test signal see fig. 1
Angle of half transmission
distance
TEST CONDITION
E
v
= 0, V
S
= 3.3 V
E
v
= 40 klx, sunlight
SYMBOL
I
SD
I
SH
V
S
d
V
OSL
E
e min.
E
e max.
ϕ
1/2
30
± 50
0.15
2.5
35
100
0.35
MIN.
0.27
TYP.
0.35
0.45
5.5
MAX.
0.45
UNIT
mA
mA
V
m
mV
mW/m
2
W/m
2
deg
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Optical Test Signal
E
e
(IR diode TSHG8400, N = 6 cycles/burst, f = 25 kHz, t
rep
= 10 ms)
0.30
Output Pulse Width
t
po
- Output Pulse Width (ms)
0.25
Input Burst Length
0.20
0.15
0.10
0.05
0
0.1
1
10
λ
= 830 nm,
Optical Test Signal, Fig.1
10
2
10
3
10
4
10
5
t
pi
t
rep
V
O
Output Signal
t
t
pi
≥
240 µs
t
rep
≥
4.1 ms
t
pi
- 80 µs < t
po
< t
pi
+ 160 µs
120 µs < t
don
< 240 µs
t
22477
t
don
t
po
22476
E
e
- Irradiance (mW/m
2
)
Fig. 1 - Output Active Low
Fig. 2 - Pulse Length and Sensitivity in Dark Ambient
Rev. 1.5, 03-Sep-13
2
Document Number: 83468
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Not for New Design
TSOP35D26
www.vishay.com
Vishay Semiconductors
E
e min.
- Threshold Irradiance (mW/m
2
)
4
Correlation with Ambient Light Sources:
2
3.5 10 W/m = 1.4 kLx (Std. illum. A, T = 2855 K)
10 W/m
2
= 8.2 kLx (Daylight, T = 5900 K)
3
2.5
2
1.5
1
0.5
0
0.01
Wavelength of Ambient
Illumination:
λ
= 950 nm
E
e
Optical Test Signal
600 µs
t = 60 ms
Output Signal,
(see fig. 4)
600 µs
t
94 8134
V
O
V
OH
V
OL
t
on
t
off
t
20757
0.1
1
10
100
E
e
- Ambient DC Irradiance
(W/m
2
)
Fig. 3 - Output Function
Fig. 6 - Sensitivity in Bright Ambient
E
e min.
- Threshold Irradiance (mW/m
2
)
0.8
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1
10
100
1000
f = 30 kHz
f = f
o
f = 20 kHz
f = 10 kHz
f = 100 Hz
T
on
, T
off
- Output Pulse Width (ms)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.1
1
T
on
T
off
λ
= 950 nm,
Optical Test Signal, Fig. 1
10
100
1000
10 000
20753
22021
E
e
- Irradiance
(mW/m
2
)
Vs
RMS
- AC Voltage on DC Supply Voltage (mV)
Fig. 4 - Output Pulse Diagram
Fig. 7 - Sensitivity vs. Supply Voltage Disturbances
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.7
16925
500
E
e min.
/E
e
- Rel. Responsivity
E - Max. Field Strength (V/m)
1.3
450
400
350
300
250
200
150
100
50
f = f
0
± 5 %
Δ
f(3 dB) = f
0
/10
0.9
1.1
0
0
20747
500
1000
1500
2000
2500
3000
f/f
0
- Relative Frequency
f - EMI Frequency (MHz)
Fig. 5 - Frequency Dependence of Responsivity
Fig. 8 - Sensitivity vs. Electric Field Disturbances
Rev. 1.5, 03-Sep-13
3
Document Number: 83468
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Not for New Design
TSOP35D26
www.vishay.com
Vishay Semiconductors
0°
10°
20°
30°
0.9
0.8
Max. Envelope Duty Cycle
f = 26.2 kHz, E
e
= 3 mW/m²
0.7
0.6
0.5
0.9
0.4
0.3
0.2
0.1
0
0
10
20
30
40
50
60
70
80
16801
40°
1.0
50°
60°
70°
0.7
variable irradiance
80°
constant irradiance
0.8
0.6
0.4
0.2
0
0.2
0.4
0.6
22022-1
Burst Length (number of cycles/burst)
d
rel
- Relative Transmission Distance
Fig. 9 - Maximum Envelope Duty Cycle vs. Burst Length
Fig. 12 - Horizontal Directivity
E
e min.
- Threshold Irradiance (mW/m
2
)
0.3
0.25
0.2
0.15
0.1
0.05
0
- 30
- 10
10
30
50
70
90
0.2
E
e min.
-
Sensitivity
(mW/m
2
)
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
2
2.5
3
3.5
4
4.5
5
5.5
6
20755
T
amb
- Ambient Temperature (°C)
20756
V
S
-
Supply
Voltage (V)
Fig. 10 - Sensitivity vs. Ambient Temperature
Fig. 13 - Sensitivity vs. Supply Voltage
1.0
S (
λ
)
rel
- Relative Spectral Sensitivity
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
700
750
800
850
900
950 1000 1050 1100
22484
λ
- Wavelength (nm)
Fig. 11 - Relative Spectral Sensitivity vs. Wavelength
Rev. 1.5, 03-Sep-13
4
Document Number: 83468
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Not for New Design
TSOP35D26
www.vishay.com
Besides conformity to CEA-2038, please note the additional information:
Vishay Semiconductors
SUITABLE DATA FORMAT
The TSOP35D26 is designed to suppress spurious output
pulses due to noise or disturbance signals. Data and
disturbance signals can be distinguished by the devices
according to carrier frequency, burst length and envelope
duty cycle. The data signal should be close to the
band-pass center frequency (e.g. 26.2 kHz) and fulfill the
conditions in the table below.
When a data signal is applied to the TSOP35D26 in the
presence of a disturbance signal, the sensitivity of the
receiver is reduced to insure that no spurious pulses are
present at the output. Some examples of disturbance
signals which are suppressed are
• DC light (e.g. from tungsten bulb or sunlight)
• Continuous signals at any frequency
• Strongly or weakly modulated noise from fluorescent
lamps with electronic ballasts (see figure 14 or figure 15)
16920
IR Signal
0
5
10
15
20
Time (ms)
Fig. 14 - IR Signal from Fluorescent Lamp
with Low Modulation
IR Signal
0
16921
5
10
15
20
Time (ms)
Fig. 15 - IR Signal from Fluorescent Lamp
with High Modulation
TSOP35D26
Minimum burst length
After each burst of length
a minimum gap time is required of
For bursts greater than
a minimum gap time in the data stream is needed of
Maximum rate of short bursts (constant irradiance)
Maximum rate of short bursts (variable irradiance)
6 cycles/burst
6 to 24 cycles
≥
6 cycles
24 cycles
> 4 x burst length
2000 bursts/s
220 bursts/s
Rev. 1.5, 03-Sep-13
5
Document Number: 83468
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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