VSMB2943RGX01, VSMB2943GX01
www.vishay.com
Vishay Semiconductors
High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW
VSMB2943RGX01
VSMB2943GX01
FEATURES
• Package type: surface mount
• Package form: GW, RGW
• Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.55
• AEC-Q101 qualified
• Peak wavelength:
λ
p
= 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity:
ϕ
= ± 25°
• Low forward voltage
• Suitable for high pulse current operation
• Terminal configurations: gullwing or reserve gullwing
• Package matches with detector VEMD2xx3X01 and
VEMT2xx3X01 series
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
VSMB2943X01 series are infrared, 940 nm emitting diodes
in GaAlAs multi quantum well (MQW) technology with high
radiant power and high speed, molded in clear, untinted
plastic packages (with lens) for surface mounting (SMD).
APPLICATIONS
•
•
•
•
•
•
•
•
IrDA compatible data transmission
Miniature light barrier
IR touch panels
3D TV
Photointerrupters
Optical switch
Control and drive circuits
Shaft encoders
PRODUCT SUMMARY
COMPONENT
VSMB2943RGX01
VSMB2943GX01
I
e
(mW/sr)
20
20
ϕ
(deg)
± 25
± 25
λ
p
(nm)
940
940
t
r
(ns)
15
15
Note
• Test conditions see table “Basic Characteristics“
ORDERING INFORMATION
ORDERING CODE
VSMB2943RGX01
VSMB2943GX01
Note
• MOQ: minimum order quantity
PACKAGING
Tape and reel
Tape and reel
REMARKS
MOQ: 6000 pcs, 6000 pcs/reel
MOQ: 6000 pcs, 6000 pcs/reel
PACKAGE FORM
Reverse gullwing
Gullwing
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
according figure 9, J-STD-020
J-STD-051, leads 7 mm, soldered on PCB
t
p
/T = 0.5, t
p
=
100 μs
t
p
= 100 μs
TEST CONDITION
SYMBOL
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
5
100
200
1
160
100
-40 to +85
-40 to +100
260
250
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
Rev. 1.6, 02-Dec-13
Document Number: 83486
1
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSMB2943RGX01, VSMB2943GX01
www.vishay.com
Vishay Semiconductors
180
120
100
80
60
P
V
- Power Dissipation (mW)
160
140
120
100
80
60
40
20
0
0
10
20 30
40
50
60
70 80
90
100
R
thJA
= 250 K/W
I
F
- Forward Current (mA)
R
thJA
= 250 K/W
40
20
0
0
10
20 30 40
50 60 70 80
90 100
21343
T
amb
- Ambient Temperature (°C)
21344
T
amb
- Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of V
F
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of radiant
power
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of
λ
p
Rise time
Fall time
Cut-off frequency
I
F
= 30 mA
I
F
= 30 mA
I
F
= 30 mA
I
F
= 100 mA, 20 % to 80 %
I
F
= 100 mA, 20 % to 80 %
I
DC
= 70 mA, I
AC
= 30 mA pp
V
R
= 0 V, f = 1 MHz, E = 0
mW/cm
2
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 μs
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 mA
I
F
= 100 mA
TEST CONDITION
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 μs
I
F
= 1 mA
I
F
= 100 mA
SYMBOL
V
F
V
F
TK
VF
TK
VF
I
R
C
J
I
e
I
e
φ
e
TKφ
e
TKφ
e
ϕ
λ
p
Δλ
TKλ
p
t
r
t
f
f
c
920
10
MIN.
1.15
TYP.
1.35
2.2
-1.8
-1.1
Not designed for reverse operation
70
20
170
40
-1.1
-0.51
± 25
940
25
0.25
15
15
23
960
30
MAX.
1.6
UNIT
V
V
mV/K
mV/K
μA
pF
mW/sr
mW/sr
mW
%/K
%/K
deg
nm
nm
nm/K
ns
ns
MHz
Rev. 1.6, 02-Dec-13
Document Number: 83486
2
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSMB2943RGX01, VSMB2943GX01
www.vishay.com
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
1000
180
Vishay Semiconductors
I
e rel
- Relative Radiant Intensity (%)
I
F
= 1 mA
160
140
120
I
F
= 100 mA
100
80
60
t
p
= 20 ms
40
- 60 - 40 - 20
0
20
40
60
80
100
I
F
- Forward Current (mA)
100
10
t
p
= 100 µs
t
p
/T= 0.001
1
0
1
2
3
21534
V
F
- Forward Voltage (V)
21444
T
amb
- Ambient Temperature (°C)
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 6 - Relative Radiant Intensity vs. Ambient Temperature
V
F, rel
- Relative Forward Voltage (%)
110
108
106
104
102
100
98
96
94
92
90
- 40
- 20
0
20
40
60
80
100
I
F
= 1 mA
t
p
= 20 ms
I
F
= 100 mA
I
F
= 10 mA
100
Φ
e rel
- Relative Radiant Power (%)
90
80
70
60
50
40
30
20
10
0
840
880
920
960
1000
1040
I
F
= 30 mA
21443
T
amb
- Ambient Temperature (°C)
21445
λ
- Wavelength (nm)
Fig. 4 - Relative Forward Voltage vs. Ambient Temperature
Fig. 7 - Relative Radiant Power vs. Wavelength
1000
0°
I
e rel
- Relative Radiant Intensity
t
p
= 100 µs
10°
20°
30°
I
e
- Radiant Intensity (mW/sr)
100
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
10
1
0.1
0.001
0.01
0.1
1
22694
I
F
- Forward Current (A)
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
Rev. 1.6, 02-Dec-13
Document Number: 83486
3
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
ϕ
- Angular Displacement
VSMB2943RGX01, VSMB2943GX01
www.vishay.com
SOLDER PROFILE
300
250
255 °C
240 °C
217 °C
max. 260 °C
245 °C
Vishay Semiconductors
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 4 weeks
Conditions: T
amb
< 30 °C, RH < 60 %
Moisture sensitivity level 2a, acc. to J-STD-020.
Temperature (°C)
200
max. 30 s
150
max. 120 s
100
50
0
0
50
100
150
200
250
300
max. ramp up 3 °C/s max. ramp down 6 °C/s
max. 100 s
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
19841
Time (s)
Fig. 9 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
PACKAGE DIMENSIONS
in millimeters:
VSMB2943RG
Rev. 1.6, 02-Dec-13
Document Number: 83486
4
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSMB2943RGX01, VSMB2943GX01
www.vishay.com
PACKAGE DIMENSIONS
in millimeters:
VSMB2943G
Vishay Semiconductors
Rev. 1.6, 02-Dec-13
Document Number: 83486
5
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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