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SZP-2026Z

产品描述2.2-2.7GHz 2W InGaP Amplifier
文件大小545KB，共12页
制造商SIRENZA
官网地址http://www.sirenza.com/
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SZP-2026Z概述

2.2-2.7GHz 2W InGaP Amplifier

SZP-2026Z文档预览

Preliminary
Product Description
Sirenza Microdevices’ SZP-2026Z is a high linearity single
stage class AB Heterojunction Bipolar Transistor (HBT)
amplifier housed in a proprietary surface-mountable plastic
encapsulated package. This HBT amplifier is made with
InGaP on GaAs device technology and fabricated with
MOCVD for an ideal combination of low cost and high reli-
ability.
This product is specifically designed as a flexible final or
driver stage for 802.16 and 802.11 equipment in the 2.2-
2.7GHz bands. It can run from a 3V to 6V supply. It is pre-
matched to ~5 ohms on the input for broadband perfor-
mance and ease of matching at the board level. It features
an output power detector, on/off power control, ESD protec-
tion, excellent overall robustness and a proprietary hand
reworkable and thermally enhanced SOF-26 package. This
product features a RoHS Compliant and Green package
with matte tin finish, designated by the ‘Z’ suffix.
SZP-2026Z
2.2-2.7GHz 2W InGaP Amplifier
Pb
RoHS Compliant
&
Green
Package
Proprietary SOF-26 Package
Product Features
•
•
•
•
•
P1dB = 33.5dBm @ 5V, 2.4GHz
802.11g 54Mb/s Class AB Performance
Pout = 26dBm @ 2.5%EVM, Vcc 5V
Pout = 27dBm @ 2.5% EVM, Vcc 6V
On-chip Output Power Detector
Input Prematched to ~5 ohms
Proprietary Low Thermal Resistance Package
Hand Solderable and Easy Rework
Power up/down control < 1µs
Functional Block Diagram
Vcc = 5V
SZP-2026
RFOUT
RFIN
Active
Bias
•
•
•
Vbias = 5V
Applications
Power
Detector
Power
Up/Dow n
Control
802.16 WiMAX Driver or Output Stage
2.4GHz 802.11 WLAN and ISM Applications
Unit
MHz
dBm
dB
dBm
dBc
dB
dB
V
mA
mA
395
8
8
Min.
2200
31.5
11.3
33
12.8
26.2
-45
4.3
12
12
0.85 to 1.4
445
2.1
10
12
495
-42
Typ.
Max.
2700
Key Specifications
Symbol
f
O
P
1dB
S
21
Pout
IM3
NF
IRL
ORL
Vdet Range
I
cq
I
VPC
I
leak
R
th, j-l
Frequency of Operation
Output Power at 1dB Compression – 2.7GHz
Small Signal Gain – 2.7GHz
Parameters: Test Conditions, 2.5-2.7GHz App circuit,
Z
0
= 50Ω, V
CC
= 5.0V, Iq = 445mA, T
BP
= 30ºC
Output power at 2.5% EVM 802.11g 54Mb/s - 2.5GHz
Third Order Suppression (Pout=23dBm per tone) - 2.7GHz
Noise Figure at 2.7GHz
Worst Case Input Return Loss 2.5-2.7GHz
Worst Case Output Return Loss 2.5-2.7GHz
Output Voltage Range for Pout=10dBm to 33dBm
Quiescent Current (V
cc
= 5V)
Power Up Control Current (V
pc
= 5V)
Vcc Leakage Current (V
cc
= 5V, V
pc
= 0V)
Thermal Resistance (junction - lead)
µ
A
ºC/W
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without
notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product
for use in life-support devices and/or systems.
Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-104611 Rev C
Preliminary
SZP-2026Z 2.2-2.7GHz 2W Power Amp
Typical Performance 2.4-2.5GHz App Circuit (Vcc=5V, Icq=445mA, * 802.11g 54Mb/s 64QAM)
Parameter
Gain
P1dB
Pout @ 2.5% EVM*
Current @ Pout 2.5% EVM*
Input Return Loss
Output Return Loss
Units
dB
dBm
dBm
mA
dB
dB
2.4GHz
13.3
33.5
26
550
16
16
2.5GHz
13.0
33.3
26
545
12
16
Typical Performance 2.5-2.7GHz - Refer to page 1 table
Pin Out Description
Pin #
1
2
3
4
5
6
GND
Function
VBIAS
RFIN
VPC
VDET
RFOUT/VCC
NC
GND
Description
This is the supply voltage for the active bias circuit.
This is the RF input pin and has a DC voltage present. An external DC block is required.
Power up/down control pin. The voltage on this pin should never exceed the voltage on pin 3 by
more than 0.5V unless the supply current from pin 3 is limited < 10mA.
This is the output port for the power detector. It samples the power at the input of the amplifier.
This is the RF output pin and DC connection to the collector.
This pin is not connected internal to the package. Buss it to pin 5 as shown on the app circuit to
achieve the specified performance.
These pins are DC connected to the backside paddle. They provide good thermal connection to the
backside paddle for hand soldering and rework. Many thermal and electrical GND vias are recom-
mended as shown in the landing pattern.
Absolute Maximum Ratings
Parameters
VC1 Collector Bias Current (I
VC1
)
**Device Voltage (V
cc
)
Power Dissipation
Operating Lead Temperature (T
L
)
*Max RF output Power for 50 ohm contin-
uous long term operation
Max RF Input Power for 50 ohm output
load
Max RF Input Power for 10:1 VSWR out-
put load
Storage Temperature Range
Operating Junction Temperature (T
J
)
ESD Human Body Model
Value
1500
7.0
6
-40 to +85
30
28
23
-40 to +150
+150
1000
Unit
mA
V
W
ºC
dBm
dBm
RFIN
2
VBIAS
1
Bias
Simplified Device Schematic
GND
6
5
NC
RFOUT/VCC
dBm
ºC
ºC
V
GND
VPC
3
4
VDET
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continuous operation
the device voltage and current must not exceed the maximum
operating values specified in the table on page one.
Bias conditions should also satisfy the following expression:
I
D
V
D
< (T
J
- T
L
) / R
TH’
j-l
Caution: ESD Sensitive
Appropriate precaution in handling, packaging
and testing devices must be observed.
* With specified application circuit.
** No RF Drive
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-104611 Rev C
Preliminary
SZP-2026Z 2.2-2.7GHz 2W Power Amp
Measured 2.4-2.5 GHz Application Circuit Data (V
cc
= V
pc
= 5.0V, I
q
= 445mA, T=25C)
Source EVM = 0.6%, not deembedded from data.
EVM vs Pout F=2.4GHz
802.11g, OFDM 54Mb/S, 64QAM
5.0
4.5
4.0
3.5
EVM(%)
EVM(%)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
12
14
16
18
-40c
20
Pout(dBm)
+25c
22
+85c
24
26
28
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
12
14
16
18
-40c
20
Pout(dBm)
+25c
22
+85c
24
26
28
EVM vs Pout F=2.5GHz
802.11g, OFDM 54Mb/S, 64QAM
IM3 vs Pout (2 Tone Avg.),T=+25c
Tone Spacing = 1MHz
-35
-40
Gain(dB)
Typical Gain vs Pout, T=+25C
15
14
-45
IM3(dBc)
-50
-55
-60
-65
18
20
22
Pout(dBm)
2.4GHz
2.5GHz
13
12
11
10
24
26
28
16
18
20
22
24
26
28
Pout(dBm)
2.5GHz
30
32
34
36
2.4GHz
Typical Gain vs Pout, F=2.4GHz
15
15
Typical Gain vs Pout, F=2.5GHz
14
14
Gain(dB)
12
Gain(dB)
16
18
20
22
24
26
28
Pout(dBm)
+25c
13
13
12
11
11
10
30
+85c
10
32
34
36
16
18
20
22
24
26
28
Pout(dBm)
+25c
30
+85c
32
34
36
-40c
-40c
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-104611 Rev C
Preliminary
SZP-2026Z 2.2-2.7GHz 2W Power Amp
Measured 2.4-2.5 GHz Application Circuit Data (V
cc
= V
pc
= 5.0V, I
q
= 445mA, T=25C)
Narrowband S11 - Input Return Loss
0
-20
Narrowband S12 - Reverse Isolation
-5
-22
-10
-24
S11(dB)
-15
S12(dB)
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
-26
-20
-28
-25
-30
-30
-32
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
Frequency(GHz)
-40C
+25C
+85C
Frequency(GHz)
-40C
+25C
+85C
Narrowband S21 - Forward Gain
15
14
13
12
-5
0
Narrowband S22 - Output Return Loss
S21(dB)
10
9
8
7
6
5
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
S22(dB)
11
-10
-15
-20
-25
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
Frequency(GHz)
-40C
+25C
+85C
Frequency(GHz)
-40C
+25C
+85C
DC Supply Current vs Pout, F=2.4GHz
1.1
1
0.9
NF(dB)
0.8
Idc(A)
0.7
0.6
0.5
0.4
0.3
16
18
20
22
24
26
Pout(dBm)
-40c
+25c
28
+85c
30
32
34
6
5.5
5
4.5
4
3.5
3
2.5
2.3
Noise Figure vs Frequency, O.T.
2.35
2.4
Frequency(GHz)
-40c
+25c
+85c
2.45
2.5
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC
4
http://www.sirenza.com
EDS-104611 Rev C
Preliminary
SZP-2026Z 2.2-2.7GHz 2W Power Amp
Measured 2.4-2.5 GHz Application Circuit Data (V
cc
= V
pc
= 5.0V, I
q
= 445mA, T=25C)
RF Power Detector (Vdet) vs Pout, F=2.4GHz
1.6
1.5
1.4
Vdet(V)
Vdet(V)
1.3
1.2
1.1
1
0.9
0.8
16
18
20
22
-40c
24
26
Pout(dBm)
+25c
28
+85c
30
32
34
1.6
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
16
18
20
22
24
26
Pout(dBm)
-40c
+25c
28
+85c
30
32
34
RF Power Detector (Vdet) vs Pout, F=2.5GHz
Broadband S11 - Input Return Loss
0
-10
Broadband S12 - Reverse Isolation
-5
-15
-20
S11(dB)
S12(dB)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
-10
-25
-15
-30
-20
-35
-25
-40
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Frequency(GHz)
-40C
+25C
+85C
Frequency(GHz)
-40C
+25C
+85C
Broadband S21 - Forward Gain
15
0
Broadband S22 - Output Return Loss
-5
10
-10
S21(dB)
5
S22(dB)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
-15
0
-20
-5
-25
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Frequency(GHz)
-40C
+25C
+85C
Frequency(GHz)
-40C
+25C
+85C
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC
5
http://www.sirenza.com
EDS-104611 Rev C
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