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SZP-3026Z: 产品描述3.0-3.8GHz 2W InGaP Amplifier; 文件大小376KB，共10页; 制造商SIRENZA; 官网地址http://www.sirenza.com/

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SZP-3026Z概述

3.0-3.8GHz 2W InGaP Amplifier

SZP-3026Z文档预览

Preliminary

Product Description

Sirenza Microdevices’ SZP-3026Z is a high linearity single

stage class AB Heterojunction Bipolar Transistor (HBT)

amplifier housed in a proprietary surface-mountable plastic

encapsulated package. This HBT amplifier is made with

InGaP on GaAs device technology and fabricated with

MOCVD for an ideal combination of low cost and high reli-

ability.

This product is specifically designed as a flexible final or

driver stage for 802.16 equipment in the 3.0-3.8GHz bands.

It can run from a 3V to 6V supply. It is prematched to ~5

ohms on the input for broadband performance and ease of

matching at the board level. It features an output power

detector, on/off power control, ESD protection, excellent

overall robustness and a proprietary hand reworkable and

thermally enhanced SOF-26 package. This product fea-

tures a RoHS Compliant and Green package with matte tin

finish, designated by the ‘Z’ suffix.

SZP-3026Z

3.0-3.8GHz 2W InGaP Amplifier

RoHS Compliant

Green

Package

Proprietary SOF-26 Package

Product Features

•

P1dB = 33.6dBm @ 5V

802.11g 54Mb/s Class AB Performance

Pout = 26dBm @ 2.5% EVM, Vcc 5V, 570mA

Pout = 27dBm @ 2.5% EVM, Vcc 6V, 513mA

On-chip Output Power Detector

Functional Block Diagram

Vcc = 5V

•

RFOUT

Input Prematched to ~5 ohms

Proprietary Low Thermal Resistance Package

Hand Solderable and Easy Rework

Power up/down control < 1μs

SZP-3026

RFIN

Active

Bias

•

Vbias = 5V

Applications

ower

Detector

ower

Up/Dow n

Control

802.16 WiMAX Driver or Output Stage

WLL

Unit

MHz

dBm

dBc

347

Min.

3000

31.7

10.5

33.2

12.0

26.0

-43

5.1

0.9 to 2.2

385

2.3

424

-40

Typ.

Max.

3800

Key Specifications

Symbol

1dB

Pout

IM3

IRL

ORL

Vdet Range

VPC

leak

th, j-l

Parameters: Test Conditions, 3.4-3.6GHz, 5V App circuit,

= 50Ω, V

= 5.0V, Iq = 385mA, T

= 30ºC

Frequency of Operation

Output Power at 1dB Compression – 3.5GHz

Small Signal Gain – 3.5GHz

Output power at 2.5% EVM 802.11g 54Mb/s - 3.5GHz

Third Order Suppression (Pout=23dBm per tone) - 3.5GHz

Noise Figure at 3.5GHz

Worst Case Input Return Loss 3.4-3.6GHz

Worst Case Output Return Loss 3.4-3.6GHz

Output Voltage Range for Pout=10dBm to 33dBm

Quiescent Current (V

= 5V)

Power Up Control Current (V

=5V)

Vcc Leakage Current (V

= 5V, V

= 0V)

Thermal Resistance (junction - lead)

ºC/W

The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions.

Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without

notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product

for use in life-support devices and/or systems.

303 South Technology Court Broomfield, CO 80021

Phone: (800) SMI-MMIC

http://www.sirenza.com

EDS-104666 Rev D

Preliminary

SZP-3026Z 3.0-3.8GHz 2W Power Amp

Typical 5V Performance with Appropriate App Circuit (Vcc=5V, Icq=385mA, * 802.11g 54Mb/s)

Parameter

Gain@Pout=26dBm

P1dB

Pout @ 2.5% EVM*

Current @ Pout 2.5% EVM*

Input Return Loss

Output Return Loss

Units

dBm

3.0GHz

12.4

33.9

26.5

590

21.8

9.0

3.3GHz

12.4

33.9

26.5

580

21.8

9.0

3.4GHz

12.4

33.6

26.5

580

20.6

10.0

3.5GHz

12.2

33.2

26.2

570

19.6

11.2

3.6GHz

12.0

32.9

25.5

560

18.3

11.7

3.7GHz

11.5

32.6

25.5

560

15.9

10.3

3.8GHz

11.0

32.1

550

15.9

10.3

Pin Out Description

Pin #

GND

Function

VBIAS

RFIN

VPC

VDET

RFOUT/VCC

GND

Description

This is the supply voltage for the active bias circuit.

This is the RF input pin and has a DC voltage present. An external DC block is required.

Power up/down control pin. The voltage on this pin should never exceed the voltage on pin 3 by

more than 0.5V unless the supply current from pin 3 is limited < 10mA.

This is the output port for the power detector. It samples the power at the input of the amplifier.

This is the RF output pin and DC connection to the collector.

This pin is not connected internal to the package. Buss it to pin 5 as shown on the app circuit to

achieve the specified performance.

These pins are DC connected to the backside paddle. They provide goos thermal connection to the

backside paddle for hand soldering and rework. Many thermal and electrical GND vias are recom-

mended as shown in the landing pattern.

Absolute Maximum Ratings

Parameters

VC1 Collector Bias Current (I

VC1

)

**Device Voltage (V

)

Power Dissipation

Operating Lead Temperature (T

)

*Max RF output Power for 50 ohm contin-

uous long term operation

Max RF Input Power for 50 ohm output

load

Max RF Input Power for 10:1 VSWR out-

put load

Storage Temperature Range

Operating Junction Temperature (T

)

ESD Human Body Model

Value

1500

7.0

-40 to +85

-40 to +150

+150

1000

Unit

ºC

dBm

VBIAS

Bias

Simplified Device Schematic

GND

dBm

ºC

GND

VPC

VDET

RFIN

RFOUT/VCC

Operation of this device beyond any one of these limits may

cause permanent damage. For reliable continuous operation

the device voltage and current must not exceed the maximum

operating values specified in the table on page one.

Bias conditions should also satisfy the following expression:

< (T

- T

) / R

TH’

j-l

Caution: ESD Sensitive

Appropriate precaution in handling, packaging

and testing devices must be observed.

* With specified application circuit.

** No RF Drive

303 South Technology Court Broomfield, CO 80021

Phone: (800) SMI-MMIC

http://www.sirenza.com

EDS-104666 Rev D

Preliminary

SZP-3026Z 3.0-3.8GHz 2W Power Amp

Measured 3.4-3.6 GHz, 5V Application Circuit Data (V

= V

= 5.0V, I

= 385mA, T=25C)

Source EVM = 0.6%, not deembedded from data.

EVM vs Pout T=+25c

802.11g, OFDM 54Mb/S, 64QAM

EVM(%)

3.4GHz

EVM vs Pout F=3.4GHz

802.11g, OFDM 54Mb/S, 64QAM

Pout(dBm)

3.5GHz

3.7GHz

-40c

Pout(dBm)

+25c

+85c

3.6GHz

EVM vs Pout F=3.6GHz

802.11g, OFDM 54Mb/S, 64QAM

EVM(%)

Pout(dBm)

-40c

+25c

+85c

EVM(%)

EVM vs Pout F=3.7GHz

802.11g, OFDM 54Mb/S, 64QAM

Pout(dBm)

-40c

+25c

+85c

IM3 vs Pout (2 Tone Avg.),T=+25c

Tone Spacing = 1MHz

-35

Typical Gain vs Pout, F=3.4GHz

-40

Gain(dB)

-45

IM3(dBc)

-50

-55

-60

-65

3.4GHz

Pout(dBm)

3.5GHz

3.6GHz

3.7GHz

Pout(dBm)

+25c

+85c

-40c

303 South Technology Court Broomfield, CO 80021

Phone: (800) SMI-MMIC

http://www.sirenza.com

EDS-104666 Rev D

Preliminary

SZP-3026Z 3.0-3.8GHz 2W Power Amp

Measured 3.4-3.6 GHz, 5V Application Circuit Data (V

= V

= 5.0V, I

= 385mA, T=25C)

Typical Gain vs Pout, F=3.6GHz

Gain(dB)

Pout(dBm)

+25c

Typical Gain vs Pout, F=3.7GHz

Gain(dB)

+85c

Pout(dBm)

+25c

+85c

-40c

Narrow band S11 - Input Return Loss

-20

Narrow band S12 - Reverse Isolation

-5

-22

-10

-24

S11(dB)

-15

S12(dB)

3.0

3.1

3.2

3.3

3.4

3.5

3.6

3.7

3.8

3.9

4.0

-26

-20

-28

-25

-30

-32

3.0

3.1

3.2

3.3

3.4

3.5

3.6

3.7

3.8

3.9

4.0

Frequency(GHz)

-40C

+25C

+85C

Frequency(GHz)

-40C

+25C

+85C

Narrow band S21 - Forw ard Gain

-5

Narrow band S22 - Output Return Loss

S21(dB)

3.0

3.1

3.2

3.3

3.4

3.5

3.6

3.7

3.8

3.9

4.0

S22(dB)

-10

-15

-20

-25

3.0

3.1

3.2

3.3

3.4

3.5

3.6

3.7

3.8

3.9

4.0

Frequency(GHz)

-40C

+25C

+85C

Frequency(GHz)

-40C

+25C

+85C

303 South Technology Court Broomfield, CO 80021

Phone: (800) SMI-MMIC

http://www.sirenza.com

EDS-104666 Rev D

Preliminary

SZP-3026Z 3.0-3.8GHz 2W Power Amp

Measured 3.4-3.6 GHz, 5V Application Circuit Data (V

= V

= 5.0V, I

= 385mA, T=25C)

DC Supply Current vs Pout, T=+25C

1.3

DC Supply Current vs Pout, F=3.5GHz

1.1

Idc(A)

0.7

Idc(A)

3.4GHz

0.9

0.7

0.5

0.3

Pout(dBm)

3.5GHz

3.6GHz

3.7GHz

0.3

Pout(dBm)

-40c

+25c

+85c

Noise Figure vs Frequency, O.T.

6.5

5.5

NF(dB)

Vdet(V)

4.5

3.5

2.5

3.3

3.4

3.5

3.6

3.7

3.8

Frequency(GHz)

-40c

+25c

+85c

RF Power Detector (Vdet) vs Pout, F=3.4GHz

2.6

2.4

2.2

1.8

1.6

1.4

1.2

0.8

Pout(dBm)

-40c

+25c

+85c

RF Power Detector (Vdet) vs Pout, F=3.6GHz

2.6

2.4

2.2

Vdet(V)

1.8

1.6

1.4

1.2

0.8

Pout(dBm)

-40c

+25c

RF Power Detector (Vdet) vs Pout, F=3.7GHz

2.6

2.4

2.2

Vdet(V)

1.8

1.6

1.4

1.2

0.8

```

+85c

Pout(dBm)

-40c

+25c

+85c

303 South Technology Court Broomfield, CO 80021

Phone: (800) SMI-MMIC

http://www.sirenza.com

EDS-104666 Rev D

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