MOCD223M — Dual-channel Phototransistor Small Outline Surface Mount Optocouplers
April 2013
MOCD223M
Dual-channel Phototransistor Small Outline Surface
Mount Optocouplers
Features
■
U.L. Recognized (File #E90700, Volume 2)
■
VDE Recognized (File #13616) (add option “V” for
■
■
■
■
■
Description
The MOCD223M consist of two gallium arsenide infrared
emitting diodes optically coupled to two monolithic silicon
phototransistor darlington detectors, in a surface mount-
able, small outline plastic package. It is ideally suited for
high density applications that require low input current
and eliminates the need for through-the-board mounting.
VDE approval, i.e, MOCD223VM)
Convenient Plastic SOIC-8 Surface Mountable
Package Style
High Current Transfer Ratio of 500% Minimum at
I
F
= 1 mA
Minimum BV
CEO
of 30 V Guaranteed
Standard SOIC-8 Footprint, with 0.050" Lead Spacing
High Input-Output Isolation Voltage of 2500 V
AC(rms)
Guaranteed
Applications
■
Interfacing and Coupling Systems of Different
Potentials and Impedances
■
General Purpose Switching Circuits
■
Monitor and Detection Circuits
Schematic
Package Outline
LED 1 ANODE 1
8 COLLECTOR 1
LED 1 CATHODE 2
7 EMITTER 1
Figure 2. Package Outline
LED 2 ANODE 3
6 COLLECTOR 2
LED 2 CATHODE 4
5 EMITTER 2
Figure 1. Schematic
©2003 Fairchild Semiconductor Corporation
MOCD223M Rev. 1.0.2
www.fairchildsemi.com
MOCD223M — Dual-channel Phototransistor Small Outline Surface Mount Optocouplers
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
T
A
= 25°C unless otherwise specified.
Symbol
Emitter
I
F
I
F
(pk)
V
R
P
D
Detector
V
CEO
V
CBO
V
ECO
I
C
P
D
Total Device
V
ISO
P
D
T
A
T
stg
T
L
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Collector Voltage
Rating
Forward Current – Continuous
Forward Current – Peak (PW = 100 µs,120 pps)
Reverse Voltage
LED Power Dissipation @ T
A
= 25°C
Derate above 25°C
Value
60
1.0
6.0
90
0.8
30
70
7.0
150
150
1.76
2500
250
2.94
-40 to +100
-40 to +150
260
Unit
mA
A
V
mW
mW/°C
V
V
V
mA
mW
mW/°C
Vac(rms)
mW
mW/°C
°C
°C
°C
Collector Current-Continuous
Detector Power Dissipation @ T
A
= 25°C
Derate above 25°C
Input-Output Isolation Voltage
(1)(2)(3)
(f = 60 Hz, t = 1 minute duration)
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
Ambient Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
(1/16" from case, 10 second duration)
©2003 Fairchild Semiconductor Corporation
MOCD223M Rev. 1.0.2
www.fairchildsemi.com
2
MOCD223M — Dual-channel Phototransistor Small Outline Surface Mount Optocouplers
Electrical Characteristics
T
A
= 25°C unless otherwise specified.
Symbol
Emitter
V
F
I
R
C
IN
Detector
I
CEO1
I
CEO2
BV
CEO
BV
ECO
C
CE
Coupled
CTR
V
CE (sat)
t
on
t
off
t
r
t
f
V
ISO
R
ISO
C
ISO
Parameter
Input Forward Voltage
Reverse Leakage Current
Capacitance
Collector-Emitter Dark Current
Collector-Emitter Breakdown
Voltage
Emitter-Collector Breakdown
Voltage
Collector-Emitter Capacitance
Collector-Output Current
(4)
Collector-Emitter Saturation
Voltage
Turn-On Time
Turn-Off Time
Rise Time
Fall Time
Isolation Surge Voltage
(1)(2)(3)
Isolation Resistance
(2)
Isolation Capacitance
(2)
Test Conditions
I
F
= 1.0 mA
V
R
= 6.0 V
Min.
Typ.* Max.
1.25
0.001
18
1.3
100
Unit
V
µA
pF
V
CE
= 5.0 V, T
A
= 25°C
V
CE
= 5.0 V, T
A
= 100°C
I
C
= 100 µA
I
E
= 100 µA
f = 1.0 MHz, V
CE
= 0
I
F
= 1.0 mA, V
CE
= 5 V
I
C
= 500 µA, I
F
= 1.0 mA
I
F
= 5.0 mA, V
CC
= 10 V, R
L
= 100
Ω
(Fig. 8)
I
F
= 5.0 mA, V
CC
= 10 V, R
L
= 100
Ω
(Fig. 8)
I
F
= 5.0 mA, V
CC
= 10 V, R
L
= 100
Ω
(Fig. 8)
I
F
= 5.0 mA, V
CC
= 10 V, R
L
= 100
Ω
(Fig. 8)
f = 60 Hz, t = 1 minute
V
I-O
= 500 V
V
I-O
= 0 V, f = 1 MHz
2500
10
11
500
30
7.0
1.0
1.0
90
10
5.5
1000
50
nA
µA
V
V
pF
%
1.0
8
55
6
45
V
µs
µs
µs
µs
Vac(rms)
Ω
0.2
pF
*Typical values at T
A
= 25°C
Notes:
1. Isolation Surge Voltage, V
ISO
, is an internal device dielectric breakdown rating.
2. For this test, pins 1, 2, 3 and 4 are common and pins 5, 6, 7 and 8 are common.
3. V
ISO
rating of 2500 V
AC(rms)
for t = 1 minute is equivalent to a rating of 3,000 V
AC(rms)
for t = 1 second.
4. Current Transfer Ratio (CTR) = I
C
/ I
F
x 100%
©2003 Fairchild Semiconductor Corporation
MOCD223M Rev. 1.0.2
www.fairchildsemi.com
3
MOCD223M — Dual-channel Phototransistor Small Outline Surface Mount Optocouplers
Typical Performance Curves
1.8
10
1.7
V
F
– FORWARD VOLTAGE (V)
1.6
1.5
1.4
T
A
= 55°C
1.3
T
A
= 25°C
I
C
– OUTPUT COLLECTOR CURRENT (NORMALIZED)
1
1.2
1.1
T
A
= 100°C
1.0
1
10
100
I
F
– LED FORWARD CURRENT (mA)
V
CE
= 5 V
NORMALIZED TO I
F
= 1 mA
0.1
0.1
1
10
100
Figure 3. LED Forward Voltage vs. Forward Current
I
F
– LED INPUT CURRENT (mA)
10
Figure 4. Output Curent vs. Input Current
2.0
I
C
– OUTPUT COLLECTOR CURRENT (NORMALIZED)
I
C
– OUTPUT COLLECTOR CURRENT (NORMALIZED)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
1
2
3
4
5
6
1
0.1
0.01
-80
-60
-40
-20
0
20
I
F
= 1 mA, V
CE
= 5 V
NORMALIZED TO T
A
= 25
o
C
40
60
o
80
100
120
I
F
= 1 mA
NORMALIZED TO V
CE
= 5 V
7
8
9
10
T
A
– AMBIENT TEMPERATURE ( C)
V
CE
– COLLECTOR -EMITTER VOLTAGE (V)
Figure 5. Output Current vs. Ambient Temperature
Figure 6. Output Current vs. Collector-Emitter Voltage
10
5
I
CEO
– COLLECTOR -EMITTER DARK CURRENT (nA)
10
4
V
CE
= 10 V
NORMALIZED TO T
A
= 25
o
C
10
3
10
2
10
1
10
0
10
-1
10
-2
0
20
40
60
80
100
T
A
– AMBIENT TEMPERATURE (°C)
Figure 7. Dark Current vs. Ambient Temperature
©2003 Fairchild Semiconductor Corporation
MOCD223M Rev. 1.0.2
www.fairchildsemi.com
4
MOCD223M — Dual-channel Phototransistor Small Outline Surface Mount Optocouplers
TEST CIRCUIT
V
CC
= 10 V
WAVE FORMS
INPUT PULSE
I
F
INPUT
R
BE
I
C
R
L
10%
90%
t
r
t
on
t
f
t
off
OUTPUT PULSE
OUTPUT
Figure 8. Switching Time Test Circuit and Waveform
©2003 Fairchild Semiconductor Corporation
MOCD223M Rev. 1.0.2
www.fairchildsemi.com
5
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