Semiconductor
SI3311-H
IRED
Features
•
•
•
•
Colorless transparency lens type
φ3mm(T-1)
all plastic mold type
Low power consumption
High radiant intensity
Outline Dimensions
unit :
mm
STRAIGHT TYPE
3.0±
0.2
STOPPER TYPE
3.0±
0.2
4.0±
0.2
5.0±
0.2
4.0±
0.2
5.0±
0.2
5.5±
0.2
0.5
25.0 MIN
0.5
25.0 MIN
1.0 MIN
1.0 MIN
2.54 NOM
2.54 NOM
12
3.8±
0.2
12
3.8±
0.2
PIN Connections
1.Anode
2.Cathode
KLI-8001-001
1
SI3311-H
Absolute maximum ratings
Characteristic
Power Dissipation
Forward Current
*
1
Peak Forward Current
Reverse Voltage
Operating Temperature
Storage Temperature
*
2
Soldering Temperature
Symbol
P
D
I
F
I
FP
V
R
T
opr
T
stg
T
sol
Ratings
150
100
1
4
-25½85
-30½100
260℃ for 5 seconds
Unit
mW
mA
A
V
℃
℃
*1.Duty ratio = 1/16, Pulse width = 0.1ms
*2. Keep the distance more than 2.0mm from PCB to the bottom of IRED package
Electrical Characteristics
Characteristic
Forward Voltage
Radiant Intensity
Peak Wavelength
Spectrum Bandwidth
Reverse Current
Symbol
V
F
I
E
Test Condition
I
F
= 50mA
I
F
= 50mA
I
F
= 50mA
I
F
= 50mA
V
R
=4V
I
F
= 50mA
Min
-
12
-
-
-
-
Typ
1.3
25
950
50
-
±17
Max
1.7
-
-
-
10
-
Unit
V
mW/Sr
nm
nm
uA
deg
λ
P
Δ
λ
I
R
θ
1
/
2
*
3
Half angle
*3.
θ
1/2 is the off-axis angle where the luminous intensity is 1/2 the peak intensity
KLI-8001-001
2
SI3311-H
Characteristic Diagrams
Fig. 1 I
F
- V
F
Fig. 2 I
V
- I
F
Forward
Voltage V
F
[V]
Luminous Intensity I
v
[mcd]
Forward
Current I
F
[mA]
Forward
Current I
F
[mA]
Fig. 3 I
F
– Ta
Fig.4 Spectrum Distribution
Current I
F
[mA]
Forward
Ambient Temperature Ta [℃]
Relative Intensity [%]
Wavelength
λ
[nm]
Fig. 5 Radiation Diagram
Relative Luminous Intensity Iv [%]
KLI-8001-001
3
电机控制
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
