TSAL6100
www.vishay.com
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Peak wavelength:
λ
p
= 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity:
ϕ
= ± 10°
94 8389
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
TSAL6100 is an infrared, 940 nm emitting diode in GaAlAs
multi quantum well (MQW) technology with high radiant
power and high speed molded in a blue-gray plastic
package.
APPLICATIONS
• Infrared remote control units with high power reqirements
• Free air transmission systems
• Infrared source for optical counters and card readers
• IR source for smoke detectors
PRODUCT SUMMARY
COMPONENT
TSAL6100
I
e
(mW/sr)
170
ϕ
(deg)
± 10
λ
p
(nm)
940
t
r
(ns)
15
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
TSAL6100
Note
• MOQ: minimum order quantity
PACKAGING
Bulk
REMARKS
MOQ: 4000 pcs, 4000 pcs/bulk
PACKAGE FORM
T-1¾
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
t
≤
5 s, 2 mm from case
J-STD-051, leads 7 mm soldered on PCB
t
p
/T = 0.5, t
p
= 100 μs
t
p
= 100 μs
TEST CONDITION
SYMBOL
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
5
100
200
1.5
160
100
-40 to +85
-40 to +100
260
230
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
Rev. 1.8, 13-Mar-14
Document Number: 81009
1
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TSAL6100
www.vishay.com
Vishay Semiconductors
120
100
80
180
P
V
- Power Dissipation (mW)
160
140
120
100
80
60
40
20
0
0
10
20 30
40
50
60
70 80
90
100
21212
I
F
- Forward Current (mA)
R
thJA
= 230 K/W
60
40
20
0
0
10
20 30 40
50 60 70 80
90 100
R
thJA
= 230 K/W
21211
T
amb
- Ambient Temperature (°C)
T
amb
- Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of V
F
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of
φ
e
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of
λ
p
Rise time
Fall time
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
TEST CONDITION
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 μs
I
F
= 1 mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 μs
I
F
= 100 mA, t
p
= 20 ms
I
F
= 20 mA
SYMBOL
V
F
V
F
TK
VF
I
R
C
j
I
e
I
e
φ
e
TKφ
e
ϕ
λ
p
Δλ
TKλ
p
t
r
t
f
80
650
40
170
1450
40
-0.6
± 10
940
30
0.2
15
15
400
MIN.
TYP.
1.35
2.2
-1.8
10
MAX.
1.6
3
UNIT
V
V
mV/K
μA
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
Rev. 1.8, 13-Mar-14
Document Number: 81009
2
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TSAL6100
www.vishay.com
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
10
1
1000
Vishay Semiconductors
Phi
e
- Radiant Power (mW)
t
p
= 100 μs
100
I
F
- Forward Current (A)
I
FSM
= 1 A (Single Pulse)
t
p
/T = 0.01
10
0
0.05
0.1
0.5
1.0
10
-1
10
-2
10
1
0.1
10
-1
10
0
10
1
10
2
1
10
100
1000
96 11987
t
p
- Pulse Duration (ms)
I
F
- Forward Current (mA)
Fig. 6 - Radiant Power vs. Forward Current
Fig. 3 - Pulse Forward Current vs. Pulse Duration
1000
1.6
I
F
- Forward Current (mA)
1.2
I
e rel
;
Φ
e rel
100
I
F
= 20 mA
0.8
10
t
p
= 100 µs
t
p
/T= 0.001
1
0
1
2
3
0.4
0
-10 0 10
94 7993
50
100
140
21534
V
F
- Forward Voltage (V)
T
amb
- Ambient Temperature (°C)
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 7 - Rel. Radiant Intensity/Power vs. Ambient Temperature
10000
100
I
e
- Radiant Intensity (mW/sr)
t
p
= 100 μs
1000
Φ
e rel
- Relative Radiant Power (%)
90
80
70
60
50
40
30
20
10
0
840
880
920
960
1000
1040
I
F
= 30 mA
100
10
1
0.1
1
10
100
1000
21445
I
F
- Forward Current (mA)
Fig. 5 - Radiant Intensity vs. Forward Current
λ
- Wavelength (nm)
Fig. 8 - Relative Radiant Power vs. Wavelength
Rev. 1.8, 13-Mar-14
Document Number: 81009
3
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TSAL6100
www.vishay.com
Vishay Semiconductors
10°
20°
30°
0°
I
e rel
- Relative Radiant Intensity
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
15989
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
PACKAGE DIMENSIONS
in millimeters
A
C
7.7 ± 0.15
Ø 5.8 ± 0.15
ϕ
- Angular Displacement
R2.49 (sphere)
8.7 ± 0.3
(4.4)
35.2 ± 0.55
< 0.7
Area not plane
+ 0.2
0.6 - 0.1
1 min.
Ø 5 ± 0.15
+ 0.15
0.5 - 0.05
2.54 nom.
+ 0.15
0.5 - 0.05
technical drawings
according to DIN
specifications
6.544-5259.08-4
Issue: 3; 19.05.09
14436
Rev. 1.8, 13-Mar-14
Document Number: 81009
4
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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Revision: 08-Feb-17
1
Document Number: 91000