IL1, IL2, IL5
Vishay Semiconductors
Optocoupler, Phototransistor Output, with Base Connection
FEATURES
A
C
NC
i179004
1
2
3
6 B
5 C
4 E
• Current transfer ratio (see order information)
• Isolation test voltage 5300 V
RMS
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
DESCRIPTION
The IL1, IL2, IL5 are optically coupled isolated pairs
employing GaAs infrared LEDs and silicon NPN
phototransistor. Signal information, including a DC level, can
be transmitted by the drive while maintaining a high degree
of electrical isolation between input and output. The IL1, IL2,
IL5 are especially designed for driving medium-speed logic
and can be used to eliminate troublesome ground loop and
noise problems. These couplers can be used also to replace
relays and transformers in many digital interface applications
such as CRT modulation.
AGENCY APPROVALS
• UL1577, file no. E52744 system code H or J, double
protection
• DIN EN 60747-5-5 (VDE 0884) available with option 1
• BSI IEC 60950; IEC 60065
ORDER INFORMATION
PART
IL1
IL2
IL5
IL1-X006
IL2-X006
IL2-X009
IL5-X009
Note
For additional information on the available options refer to option information.
REMARKS
CTR > 20 %, DIP-6
CTR > 100 %, DIP-6
CTR > 50 %, DIP-6
CTR > 20 %, DIP-6 400 mil (option 6)
CTR > 100 %, DIP-6 400 mil (option 6)
CTR >100 %, SMD-6 (option 9)
CTR > 50 %, SMD-6 (option 9)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
INPUT
Reverse voltage
Forward current
Surge current
Power dissipation
Derate linearly from 25 °C
OUTPUT
(1)
TEST CONDITION
PART
SYMBOL
V
R
I
F
I
FSM
P
diss
VALUE
6
60
2.5
100
1.33
50
70
70
7
70
50
400
200
2.6
UNIT
V
mA
A
mW
mW/°C
V
V
V
V
V
mA
mA
mW
mW/°C
IL1
Collector emitter breakdown voltage
Emitter base breakdown voltage
Collector base breakdown voltage
Collector current
Power dissipation
Derate linearly from 25 °C
t < 1.0 ms
IL2
IL5
BV
CEO
BV
CEO
BV
CEO
BV
EBO
BV
CBO
I
C
I
C
P
diss
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For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83612
Rev. 1.6, 10-Dec-08
IL1, IL2, IL5
Optocoupler, Phototransistor
Output, with Base Connection
ABSOLUTE MAXIMUM RATINGS
PARAMETER
COUPLER
Package power dissipation
Derate linearly from 25 °C
Isolation test voltage
between emitter and detector
Creepage distance
Clearance distance
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
Isolation resistance
Storage temperature
Operating temperature
Junction temperature
Soldering temperature
(2)
Vishay Semiconductors
(1)
TEST CONDITION
PART
SYMBOL
P
tot
VALUE
250
3.3
UNIT
mW
mW/°C
V
RMS
mm
mm
V
ISO
5300
≥
7
≥
7
CTI
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
R
IO
R
IO
T
stg
T
amb
T
j
2.0 mm from case bottom
T
sld
175
≥
10
12
≥
10
11
- 40 to + 150
- 40 to + 100
100
260
Ω
Ω
°C
°C
°C
°C
Notes
(1)
T
amb
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
ELECTRICAL CHARACTERISTICS
PARAMETER
INPUT
Forward voltage
Breakdown voltage
Reverse current
Capacitance
Thermal resistance junction to lead
OUTPUT
Collector emitter capacitance
Collector base capacitance
Emitter base capacitance
Collector emitter leakage voltage
Collector emitter saturation voltage
Base emitter voltage
DC forward current gain
DC forward current gain saturated
Thermal resistance junction to lead
COUPLER
Capacitance (input to output)
Insulation resistance
V
I-O
= 0 V, f = 1.0 MHz
V
I-O
= 500 V
C
IO
R
S
0.6
10
14
pF
Ω
V
CE
= 5.0 V, f = 1.0 MHz
V
CB
= 5.0 V, f = 1.0 MHz
V
EB
= 5.0 V, f = 1.0 MHz
V
CE
= 10 V
I
CE
= 1.0 mA, I
B
= 20 µA
V
CE
= 10 V, I
B
= 20 µA
V
CE
= 10 V, I
B
= 20 µA
V
CE
= 0.4 V, I
B
= 20 µA
C
CE
C
CB
C
EB
I
CEO
V
CEsat
V
BE
h
FE
h
FEsat
R
thjl
200
120
6.8
8.5
11
5
0.25
0.65
650
400
500
1800
600
K/W
50
pF
pF
pF
nA
V
V
I
F
= 60 mA
I
R
= 10 µA
V
R
= 6.0 V
V
R
= 0 V, f = 1.0 MHz
V
F
V
BR
I
R
C
O
R
thjl
6
1.25
30
0.01
40
750
10
1.65
V
V
µA
pF
K/W
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Note
T
amb
= 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Document Number: 83612
Rev. 1.6, 10-Dec-08
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
295
IL1, IL2, IL5
Vishay Semiconductors
Optocoupler, Phototransistor
Output, with Base Connection
CURRENT TRANSFER RATIO
PARAMETER
Current transfer ratio
(collector emitter saturated)
Current transfer ratio
(collector emitter)
Current transfer ratio
(collector base)
TEST CONDITION
I
F
= 10 mA, V
CE
= 0.4 V
PART
IL1
IL2
IL5
IL1
I
F
= 10 mA, V
CE
= 10 V
IL2
IL5
IL1
I
F
= 10 mA, V
CB
= 9.3 V
IL2
IL5
SYMBOL
CTR
CEsat
CTR
CEsat
CTR
CEsat
CTR
CE
CTR
CE
CTR
CE
CTR
CB
CTR
CB
CTR
CB
20
100
50
MIN.
TYP.
75
170
100
80
200
130
0.25
0.25
0.25
300
500
400
MAX.
UNIT
%
%
%
%
%
%
%
%
%
SWITCHING CHARACTERISTICS
PARAMETER
NON-SATURATED
Current time
V
CE
= 5 V, R
L
= 75
Ω,
t
P
measured at 50 % of output
V
CE
= 5 V, R
L
= 75
Ω,
t
P
measured at 50 % of output
V
CE
= 5 V, R
L
= 75
Ω,
t
P
measured at 50 % of output
V
CE
= 5 V, R
L
= 75
Ω,
t
P
measured at 50 % of output
V
CE
= 5 V, R
L
= 75
Ω,
t
P
measured at 50 % of output
V
CE
= 5 V, R
L
= 75
Ω,
t
P
measured at 50 % of output
V
CE
= 5 V, R
L
= 75
Ω,
t
P
measured at 50 % of output
IL1
IL2
IL5
IL1
IL2
IL5
IL1
IL2
IL5
IL1
IL2
IL5
IL1
IL2
IL5
IL1
IL2
IL5
IL1
IL2
IL5
IL1
Current time
V
CE
= 0.4 V, R
L
= 1.0 kΩ,
V
CL
= 5 V, V
TH
= 1.5 V
IL2
IL5
IL1
Delay time
V
CE
= 0.4 V, R
L
= 1.0 kΩ,
V
CL
= 5 V, V
TH
= 1.5 V
IL2
IL5
IL1
Rise time
V
CE
= 0.4 V, R
L
= 1.0 kΩ,
V
CL
= 5 V, V
TH
= 1.5 V
IL2
IL5
IL1
Storage time
V
CE
= 0.4 V, R
L
= 1.0 kΩ,
V
CL
= 5 V, V
TH
= 1.5 V
IL2
IL5
t
S
t
r
t
D
I
F
t
PLH
t
PHL
t
f
t
s
t
r
t
D
I
F
20
4
10
0.8
1.7
1.7
1.9
2.6
2.6
0.2
0.4
0.4
1.4
2.2
2.2
0.7
1.2
1.1
1.4
2.3
2.5
20
5
10
0.8
1
1.7
1.2
2
7
7.4
5.4
4.6
µs
µs
µs
mA
µs
µs
µs
µs
µs
µs
mA
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Delay time
Rise time
Storage time
Fall time
Propagation H to L
Propagation L to H
SATURATED
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For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83612
Rev. 1.6, 10-Dec-08
IL1, IL2, IL5
Optocoupler, Phototransistor
Output, with Base Connection
SWITCHING CHARACTERISTICS
PARAMETER
SATURATED
IL1
Fall time
V
CE
= 0.4 V, R
L
= 1.0 kΩ,
V
CL
= 5 V, V
TH
= 1.5 V
IL2
IL5
IL1
Propagation H to L
V
CE
= 0.4 V, R
L
= 1.0 kΩ,
V
CL
= 5 V, V
TH
= 1.5 V
IL2
IL5
IL1
Propagation L to H
V
CE
= 0.4 V, R
L
= 1.0 kΩ,
V
CL
= 5 V, V
TH
= 1.5 V
IL2
IL5
t
PLH
t
PHL
t
f
7.6
13.5
20
1.6
5.4
2.6
8.6
7.4
7.2
µs
µs
µs
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Vishay Semiconductors
COMMON MODE TRANSIENT IMMUNITY
PARAMETER
Common mode rejection
output high
Common mode rejection
output low
Common mode coupling
capacitance
TEST CONDITION
V
CM
= 50 V
P-P
, R
L
= 1 kΩ, I
F
= 10 mA
V
CM
= 50 V
P-P
, R
L
= 1 kΩ, I
F
= 10 mA
PART
SYMBOL
|CM
H
|
|CM
L
|
C
CM
MIN.
TYP.
5000
5000
0.01
MAX.
UNIT
V/µs
V/µs
pF
TYPICAL CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
V
CC
= 5
V
I
F
I
F
= 10 mA
V
O
t
PHL
V
O
t
PLH
t
S
50
%
f = 10 kHz
DF = 50
%
R
L
= 75
Ω
iil1_01
iil1_03
t
D
t
R
t
F
Fig. 1 - Non-Saturated Switching Schematic
V
CC
= 5
V
Fig. 3 - Non-Saturated Switching Timing
I
F
f = 10 kHz
DF = 50
%
R
L
t
D
V
O
V
O
t
R
t
PLH
V
TH
= 1.5
V
t
PHL
t
S
t
F
I = 10 mA
F
iil1_04
iil1_02
Fig. 2 - Saturated Switching Schematic
Document Number: 83612
Rev. 1.6, 10-Dec-08
Fig. 4 - Saturated Switching Timing
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For technical questions, contact: optocoupler.answers@vishay.com
IL1, IL2, IL5
Vishay Semiconductors
Optocoupler, Phototransistor
Output, with Base Connection
1.4
1.5
T
A
= - 55 °C
T
A
= 25 °C
V
F
- Forward
Voltage
(V)
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.1
1
NCTR
-
Normalized
CTR
Normalized
to:
V
CE
= 10
V,
I
F
= 10 mA
1.0
CTRce(sat)
V
CE
= 0.4
V
T
A
= 70 °C
0.5
NCTR(SAT)
NCTR
0.0
T
A
= 100 °C
10
100
iil1_08
0.1
1
10
100
iil1_05
I
F
- Forward Current (mA)
I
F
- LED Current (mA)
Fig. 5 - Forward Voltage vs. Forward Current
Fig. 8 - Normalized Non-Saturated and Saturated CTR vs.
LED Current
1.5
1.5
Normalized
to:
V
CE
= 10
V,
I
F
= 10 mA
CTRce(sat)
V
CE
= 0.4
V
NCTR
-
Normalized
CTR
NCTR
-
Normalized
CTR
Normalized
to:
V
CE
= 10
V,
I
F
= 10 mA
CTRce(sat)
V
CE
= 0.4
V
1.0
T
A
= 100 °C
1.0
0.5
NCTR(SAT)
NCTR
0.0
0.1
1
10
100
0.5
NCTR(SAT)
NCTR
0.0
0.1
1
10
100
iil1_06
I
F
- LED Current (mA)
iil1_09
I
F
- LED Current (mA)
Fig. 6 - Normalized Non-Saturated and Saturated CTR vs.
LED Current
Fig. 9 - Normalized Non-Saturated and Saturated CTR,
T
amb
= 100 °C vs. LED Current
1.5
35
I
ce
- Collector Current (mA)
NCTR
-
Normalized
CTR
Normalized
to:
V
CE
= 10
V,I
F
= 10 mA
CTRce(sat)
V
CE
= 0.4
V
1.0
T
A
= 50 °C
30
25
20
15
10
5
0
25 °C
100 °C
70 °C
50 °C
0.5
NCTR(SAT)
NCTR
0.0
0.1
1
10
100
0
iil1_10
10
20
30
40
50
60
iil1_07
I
F
- LED Current (mA)
I
F
- LED Current (mA)
Fig. 7 - Normalized Non-Saturated and Saturated CTR vs.
LED Current
Fig. 10 - Collector Emitter Current vs. Temperature and LED Current
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For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83612
Rev. 1.6, 10-Dec-08
Microchip MCU
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