MITSUBISHI HVIGBT MODULES
CM800E2C-66H
HIGH POWER SWITCHING USE
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
CM800E2C-66H
q
I
C ...................................................................
800A
q
V
CES .......................................................
3300V
q
Insulated Type
q
1-elements in a pack (for brake)
q
AISiC base plate
APPLICATION
DC choppers, Dynamic braking choppers.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
57
±0.25
190
171
57
±0.25
57
±0.25
6 - M8 NUTS
C
C
C
K (C)
G
E
124
±0.25
140
C
C
C
40
20
E
E
A (E)
CM
E
E
E
CIRCUIT DIAGRAM
C
E
G
20.25
41.25
3 - M4 NUTS
79.4
61.5
13
61.5
5.2
38
8 -
φ7MOUNTING
HOLES
15
40
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
5
LABEL
29.5
28
Mar. 2003
MITSUBISHI HVIGBT MODULES
CM800E2C-66H
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS
(Tj = 25
°
C)
Symbol
V
CES
V
GES
I
C
I
CM
I
E (Note 2)
I
EM (Note 2)
P
C (Note 3)
T
j
T
stg
V
iso
—
—
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Mass
V
GE
= 0V
V
CE
= 0V
DC, T
C
= 95°C
Pulse
Pulse
T
C
= 25°C, IGBT part
Conditions
Ratings
3300
±20
800
1600
800
1600
9600
–40 ~ +150
–40 ~ +125
6000
6.67 ~ 13.00
2.84 ~ 6.00
0.88 ~ 2.00
1.5
Unit
V
V
A
A
A
A
W
°C
°C
V
N·m
N·m
N·m
kg
(Note 1)
(Note 1)
—
—
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value
ELECTRICAL CHARACTERISTICS
(Tj = 25
°
C)
Symbol
I
CES
V
GE(th)
I
GES
V
CE(sat)
C
ies
C
oes
C
res
Q
G
t
d (on)
t
r
t
d (off)
t
f
V
EC (Note 2)
t
rr (Note 2)
Q
rr (Note 2)
R
th(j-c)Q
R
th(j-c)R
R
th(c-f)
V
FM
t
rr
Q
rr
R
th(j-c)
R
th(c-f)
Note 1.
2.
3.
4.
Item
Collector cutoff current
Gate-emitter
threshold voltage
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
Forward voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
Conditions
V
CE
= V
CES
, V
GE
= 0V
I
C
= 80mA, V
CE
= 10V
V
GE
= V
GES
, V
CE
= 0V
T
j
= 25°C
I
C
= 800A, V
GE
= 15V
T
j
= 125°C
V
CE
= 10V
V
GE
= 0V
V
CC
= 1650V, I
C
= 800A, V
GE
= 15V
V
CC
= 1650V, I
C
= 800A
V
GE1
= V
GE2
= 15V
R
G
= 2.5Ω
Resistive load switching operation
I
E
= 800A, V
GE
= 0V
I
E
= 800A
die / dt = –1600A /
µs
Junction to case, IGBT part
Junction to case, FWDi part
Case to fin, conductive grease applied (Per 2/3 module)
I
F
= 800A, Clamp diode part
I
F
= 800A
di
f
/ dt = –1600A /
µs,
Clamp diode part
Junction to case, Clamp diode part
Case to fin, conductive grease applied (Per 1/3 module)
Min
—
4.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Limits
Typ
—
6.0
—
3.80
4.00
120
12.0
3.6
5.7
—
—
—
—
2.80
—
270
—
—
0.008
3.00
—
270
—
0.008
Max
10
7.5
0.5
4.94
—
—
—
—
—
1.60
2.00
2.50
1.00
3.64
1.40
—
0.013
0.025
—
3.90
1.40
—
0.025
—
Unit
mA
V
µA
V
nF
nF
nF
µC
µs
µs
µs
µs
V
µs
µC
K/W
K/W
K/W
V
µs
µC
K/W
K/W
(Note 4)
Pulse width and repetition rate should be such that the device junction temp. (T
j
) does not exceed T
jmax
rating.
I
E
, V
EC
, t
rr
, Q
rr
& die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
Junction temperature (T
j
) should not increase beyond 150°C.
Pulse width and repetition rate should be such as to cause negligible temperature rise.
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Mar. 2003
MITSUBISHI HVIGBT MODULES
CM800E2C-66H
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
1600
T
j
=25°C
COLLECTOR CURRENT I
C
(A)
TRANSFER CHARACTERISTICS
(TYPICAL)
1600
COLLECTOR CURRENT I
C
(A)
V
GE
=14V
1200
V
GE
=15V
V
GE
=20V
800
V
GE
=13V
V
GE
=12V
V
GE
=11V V
GE
=10V
V
CE
=10V
1200
800
V
GE
=9V
400
V
GE
=8V
V
GE
=7V
0
0
2
4
6
8
10
400
T
j
= 25°C
T
j
= 125°C
0
0
4
8
12
16
20
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(V)
8
V
GE
=15V
10
T
j
= 25°C
8
I
C
= 1600A
6
I
C
= 800A
6
4
4
2
T
j
= 25°C
T
j
= 125°C
0
0
400
800
1200
1600
2
I
C
= 320A
0
4
8
12
16
20
0
COLLECTOR CURRENT I
C
(A)
GATE-EMITTER VOLTAGE V
GE
(V)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
8
CAPACITANCE C
ies
, C
oes
, C
res
(nF)
CAPACITANCE CHARACTERISTICS
(TYPICAL)
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
V
GE
= 0V, T
j
= 25°C
C
ies,
C
oes
: f = 100kHz
: f = 1MHz
C
res
C
ies
6
4
C
oes
2
T
j
= 25°C
T
j
= 125°C
0
0
400
800
1200
1600
C
res
10
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
Mar. 2003
EMITTER CURRENT I
E
(A)
MITSUBISHI HVIGBT MODULES
CM800E2C-66H
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIMES (
µs
)
3
2
10
0
7
5
3
2
10
–1
7
5
t
d(off)
t
d(on)
t
r
t
f
V
CC
= 1650V, V
GE
=
±15V
R
G
= 2.5Ω, T
j
= 125°C
Inductive load
5 7 10
2
2 3
5 7 10
3
2 3
5
10
1
7
5
3
2
10
0
7
5
I
rr
10
3
7
5
3
2
t
rr
5 7 10
2
2 3
5 7 10
3
2 3
5
10
2
7
5
COLLECTOR CURRENT I
C
(A)
EMITTER CURRENT I
E
(A)
SWITCHING ENERGY (J/P)
2.0
E
on
1.5
E
off
1.0
0.5
0
E
rec
SWITCHING ENERGY (J/P)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
3.0
V
CC
= 1650V, V
GE
=
±15V,
R
G
= 2.5Ω, Tj = 125°C,
2.5 Inductive load
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
10
V
CC
= 1650V, I
C
= 800A,
V
GE
=
±15V,
Tj = 125°C,
Inductive load
8
6
E
on
4
2
E
off
0
400
800
CURRENT (A)
1200
1600
0
0
10
20
30
GATE RESISTANCE (
Ω
)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
GATE-EMITTER VOLTAGE V
GE
(V)
16
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th(j – c)
V
CC
= 1650V
I
C
= 800A
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
7
5
3
2
Single Pulse
T
C
= 25°C
R
th(j – c)Q
= 0.013K/ W
R
th(j – c)R
= 0.025K/ W
12
8
4
0
0
2000
4000
6000
8000
10000
10
–2
10
–3
2 3 5 7 10
–2
2 3 5 710
–1
2 3 5 7 10
0
2 3 5 7 10
1
TIME (s)
GATE CHARGE Q
G
(nC)
REVERSE RECOVERY CURRENT I
rr
(A)
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
5
REVERSE RECOVERY TIME t
rr
(
µs
)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
5
5
V
CC
= 1650V, T
j
= 125°C
3 Inductive load
3
V
GE
=
±15V,
R
G
= 2.5Ω
2
2
Mar. 2003
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