Sirenza Microdevices SNA-186 is a GaAs monolithic broad-
band amplifier (MMIC) housed in a low-cost surface-mount-
able plastic package. At 1950 MHz, this amplifier provides 12dB
of gain and +13dBm of P1dB power when biased at 50mA.
The use of an external resistor allows for bias flexibility and
stability. These unconditionally stable amplifiers are designed
for use as general purpose 50 ohm gain blocks.
Also available in chip form (SNA-100), its small size (0.33mm
x 0.33mm) and gold metallization makes it an ideal choice for
use in hybrid circuits.
SNA-186
DC-8 GHz, Cascadable
GaAs HBT MMIC Amplifier
Output Power vs. Frequency
15
14
Product Features
Patented, Reliable GaAs HBT Technology
Cascadable 50 Ohm Gain Block
12dB Gain, +13dBm P1dB
1.5:1 Input and Output VSWR
Operates From a Single DC Supply
Low Cost Surface Mount Plastic Package
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Units
dB
dB
dB
dB
GHz
dBm
dBm
dB
dBm
13
12
11
10
0.1
0.5
1
1.5
2
4
6
8
GHz
Sy mbol
G
P
G
F
BW3dB
P
1dB
Parameter
Small Signal Pow er Gain
Gain Flatness
3dB Bandw idth
Output Pow er at 1dB Compression
Frequency
850 M Hz
1950 M Hz
2400 M Hz
0.1-8 GHz
Min.
11.5
Ty p.
12.5
12.0
11.8
+/- 0.5
10.0
Max.
13.8
1950 M
Hz
1950 M
Hz
1950 M
Hz
0.1-10 GHz
0.1-10 GHz
3.
3
13.0
26
.0
O
IP
3
NF
VSWR
ISOL
V
D
Output
Third Order Intercept Point
Noise Figure
Input / Output
Reverse Isolation
6
.0
1.5:1
16
-
dB
V
Device Operating Voltage
Device Operating Current
Device
Gain
Temperature Coefficient
3.8
50
-0.0015
4.
3
I
D
dG/dT
mA
dB
/°C
°C/W
45
55
R
TH
, j-l
Thermal Resistance (junction to lead)
350
Test Conditions:
V
S
= 8 V
R
BIAS
= 82 Ohms
I
D
= 50 mA Typ.
T
L
= 25ºC
OIP
3
Tone Spacing = 1 MHz, Pout per tone = 0 dBm
Z
S
= Z
L
= 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of
this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are
implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc..
All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-101697 Rev A
Preliminary
SNA-186 DC-10 GHz Cascadable MMIC Amplifier
Typical Performance at 25° C (Vds = 3.8V, Ids = 50mA)
|S11| vs. Frequency
0
-5
-10
-15
-20
-25
0.1
0.5
1
1.5
2
4
6
8
|S21| vs. Frequency
13
12
dB
dB
11
10
9
0.1
0.5
1
1.5
2
4
6
8
GHz
GHz
|S12| vs. Frequency
0
-5
|S22| vs. Frequency
0
-5
dB
-10
-15
-20
0.1
0.5
1
1.5
2
4
6
8
dB
-10
-15
-20
0.1
0.5
1
1.5
2
4
6
8
GHz
GHz
Noise Figure vs. Frequency
8
28
27
TOIP vs. Frequency
7
dB
6
dBm
26
25
24
5
0.1
0.5
1
1.5
2
4
6
8
0.1
0.5
1
1.5
2
4
6
8
GHz
GHz
Absolute Maximum Ratings
Parameter
Max.
Device Current
(I
D
)
Max.
Device
Voltage (V
D
)
Max.
RF Input Pow er
Max.
Junction Temp
. (T
J
)
Operating Temp
. Range (T
L
)
Absolute Limit
70
mA
6V
+10 dBm
+
150
°C
-40°C to +85°C
+150°C
Max.
Storage Temp
.
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continous operation,
the device voltage and current must not exceed the maximum
operating values specified in the table on page one.
Bias Conditions should also satisfy the follow ing expression:
I
D
V
D
< (T
J
- T
L
) / R
TH
, j-l
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-101697 Rev A
Preliminary
SNA-186 DC-10 GHz Cascadable MMIC Amplifier
Application Circuit Element Values
Typical Application Circuit
R
BIAS
1 uF
1000
pF
Reference
Designator
Frequency (Mhz)
500
850
1950
2400
3500
C
B
220 pF
100 pF
68 nH
100 pF
68 pF
33 nH
68 pF
22 pF
22 nH
56 pF
22 pF
18 nH
39 pF
15 pF
15 nH
C
D
L
C
C
D
L
C
RF in
C
B
1
4
SNA-186
Recommended Bias Resistor Values for I
D
=50mA
3
C
B
RF out
Supply Voltage(V
S
)
R
BIAS
6V
43
8V
82
10 V
120
12 V
160
2
Note: R
BIAS
provides DC bias stability over temperature.
V
S
R
BIAS
1 uF
1000 pF
Mounting Instructions
1. Use a large ground pad area under device pins 2
and 4 with many plated through-holes as shown.
L
C
S1
C
D
C
B
C
B
2. We recommend 1 or 2 ounce copper. Measurements
for this data sheet were made on a 31 mil thick FR-4
board with 1 ounce copper on both sides.
Pin #
Function
RF IN
Description
RF input pin. This pin requires the use
of an external DC blocking capacitor
chosen for the frequency of operation.
Connection to ground. For optimum RF
performance, use via holes as close to
ground leads as possible to reduce lead
inductance.
Part Identification Marking
The part will be marked with an S1 designator on the
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