FODM121 Series, FODM124, FODM2701, FODM2705 — 4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers
February 2012
FODM121 Series, FODM124, FODM2701, FODM2705
4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers
Features
■
More than 5mm creepage/clearance
■
Compact 4-pin surface mount package
Applications
■
Digital logic inputs
■
Microprocessor inputs
■
Power supply monitor
■
Twisted pair line receiver
■
Telephone line receiver
(2.4mm maximum standoff height)
■
Current Transfer Ratio in selected groups
DC Input:
FODM121: 50–600%
FODM121A: 100–300%
FODM121B: 50–150%
FODM121C: 100–200%
FODM2701: 50–300%
FODM124: 100% MIN
Description
The FODM124, FODM121 series, and FODM2701
consists of a gallium arsenide infrared emitting diode
driving a phototransistor in a compact 4-pin mini-flat
package. The lead pitch is 2.54mm. The FODM2705
consists of two gallium arsenide infrared emitting diodes
connected in inverse parallel for AC operation.
AC Input:
FODM2705: 50–300%
■
Available in tape and reel quantities of 2500
■
Applicable to Infrared Ray reflow (260°C max, 10 sec.)
■
C-UL, UL and VDE* certifications
*option ‘V’ required
Package Dimensions
4.40
±0.20
ANODE
1
4
COLLECTOR
2.54
CATHODE
2
3
EMITTER
3.85
±0.20
2.00
±0.20
5.30
±0.30
Equivalent Circuit
FODM121, FODM124, FODM2701
0.20
±0.05
0.10
±0.10
ANODE
1
4
COLLECTOR
CATHODE
2
3
EMITTER
0.40
±0.10
7.00
+0.2
–0.7
Note:
All dimensions are in millimeters.
Equivalent Circuit
FODM2705
©2006 Fairchild Semiconductor Corporation
FODMXXX Rev. 1.1.4
www.fairchildsemi.com
FODM121 Series, FODM124, FODM2701, FODM2705 — 4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
TOTAL PACKAGE
T
STG
T
OPR
EMITTER
I
F (avg)
I
F (pk)
V
R
P
D
DETECTOR
Storage Temperature
Operating Temperature
Parameter
Value
-40 to +125
-40 to +110
50
1
6
70
0.65
80
150
2.0
Units
°C
°C
mA
A
V
mW
mW/°C
mA
mW
mW/°C
V
V
Continuous Forward Current
Peak Forward Current (1µs pulse, 300 pps.)
Reverse Input Voltage
Power Dissipation
Derate linearly (above 25°C)
Continuous Collector Current
P
D
V
CEO
V
ECO
Power Dissipation
Derate linearly (above 25°C)
Collector-Emitter Voltage
Emitter-Collector Voltage
FODM2701, FODM2705
FODM121 Series, FODM124
40
80
7
Electrical Characteristics
(T
A
= 25°C)
Individual Component Characteristics
Symbol Parameter
EMITTER
V
F
Forward Voltage
I
F
= 10mA
I
F
= 5mA
I
F
= ±5mA
I
R
Reverse Current
V
R
= 5V
FODM121 Series,
FODM124
FODM2701
FODM2705
FODM2701
FODM121 Series
FODM124
DETECTOR
BV
CEO
Breakdown Voltage
Collector to Emitter
I
C
= 1mA, I
F
= 0
FODM121 Series,
FODM124
FODM2701,
FODM2705
BV
ECO
I
CEO
C
CE
Emitter to Collector
Collector Dark
Current
Capacitance
I
E
= 100µA, I
F
= 0
V
CE
= 40V, I
F
= 0
V
CE
= 0V, f = 1MHz
All
All
All
10
80
40
7
100
V
nA
pF
V
5
µA
1.0
1.3
1.4
V
Test Conditions
Device
Min.
Typ.*
Max.
Unit
©2006 Fairchild Semiconductor Corporation
FODMXXX Rev. 1.1.4
www.fairchildsemi.com
2
FODM121 Series, FODM124, FODM2701, FODM2705 — 4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers
Electrical Characteristics
(Continued) (T
A
= 25°C)
Transfer Characteristics
Symbol
CTR
Characteristic
DC Current Transfer Ratio
Test Conditions
I
F
= ±5mA, V
CE
= 5V
I
F
= 5mA, V
CE
= 5V
I
F
= 5mA, V
CE
= 5V
Device
FODM2705
FODM2701
FODM121
FODM121A
FODM121B
FODM121C
Min.
50
50
50
100
50
100
100
50
0.3
Typ.*
Max.
300
300
600
300
150
200
1200
3.0
0.3
0.3
0.4
0.4
Unit
%
I
F
= 1mA, V
CE
= 0.5V
I
F
= 0.5mA, V
CE
= 1.5V
CTR Symmetry
V
CE (SAT)
Saturation Voltage
I
F
= ±5mA, V
CE
= 5V
I
F
= ±10mA, I
C
= 2mA
I
F
= 10mA, I
C
= 2mA
I
F
= 8mA, I
C
= 2.4mA
I
F
= 1mA, I
C
= 0.5mA
t
r
t
f
Rise Time (Non-Saturated) I
C
= 2mA, V
CE
= 5V,
R
L
= 100
Ω
Fall Time (Non-Saturated)
I
C
= 2mA, V
CE
= 5V,
R
L
= 100
Ω
FODM124
FODM2705
FODM2705
FODM2701
FODM121
Series
FODM124
All
All
V
3
3
µs
µs
Isolation Characteristics
Characteristic
Steady State Isolation Voltage
(1)
*All typicals at T
A
= 25°C
Note:
1. Steady state isolation voltage, V
ISO
, is an internal device dielectric breakdown rating. For this test, pins 1 and 2 are
common, and pins 3 and 4 are common.
Test Conditions
1 Minute
Symbol
V
ISO
Device
All
Min.
3750
Typ.*
Max.
Unit
VRMS
©2006 Fairchild Semiconductor Corporation
FODMXXX Rev. 1.1.4
www.fairchildsemi.com
3
FODM121 Series, FODM124, FODM2701, FODM2705 — 4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers
Typical Performance Curves
Fig. 1 Forward Current vs. Forward Voltage
100
Fig. 2 Collector-Emitter Saturation Voltage vs.
Ambient Temperature (FODM121/2701/2705)
0.35
V
CE(sat)
- Collector-Emitter Saturation Voltage(V)
0.30
T
A
= 110 C
o
I
F
- Forward Current (mA)
70
o
C
25 C
o
0.25
I
F
= 8mA
I
C
= 2.4mA
0
o
C
-40
o
C
0.20
10
0.15
I
F
= 10mA
I
C
= 2mA
0.10
0.05
1
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.00
-40
-20
0
20
40
60
80
100
120
V
F
- Forward Voltage (V)
T
A
- Ambient Temperature (°C)
Fig. 3 Current Transfer Ratio vs. Forward Current
(FODM121/2701/2705)
100
Fig. 4 Collector Current vs. Forward Current
(FODM121/2701/2705)
T
A
= 25
o
C
V
CE
= 10V
T
A
= 25 C
o
CTR – Current Transfer Ratio (%)
V
CE
= 10V
V
CE
= 5V
I
C
- Collector Current (mA)
V
CE
= 5V
10
100
1
10
0.1
1
10
100
0.1
0.1
1
10
100
I
F
- Forward Current (mA)
I
F
- Forward Current (mA)
Fig. 5 Collector Current vs. Ambient Temperature
(FODM121/2701/2705)
100
I
F
= 25mA
40
Fig. 6 Collector Current vs. Collector-Emitter
Voltage
(FODM121/2701/2705)
T
A
= 25 C
I
F
= 50mA
o
I
C
- Collector Current (mA)
10
I
F
= 5mA
I
F
= 10mA
I
C
- Collector Current (mA)
I
F
= 40mA
30
I
F
= 30mA
I
F
= 20mA
1
I
F
= 1mA
20
I
F
= 10mA
0.1
I
F
= 0.5mA
10
I
F
= 5mA
V
CE
= 5V
0.01
-40
0
I
F
= 1mA
-20
0
20
40
60
80
100
120
0
2
4
6
8
10
T
A
- Ambient Temperature (°C)
©2006 Fairchild Semiconductor Corporation
FODMXXX Rev. 1.1.4
V
CE
- Collector-Emitter Voltage (V)
www.fairchildsemi.com
4
FODM121 Series, FODM124, FODM2701, FODM2705 — 4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers
Fig 7. Collector Dark Current vs. Ambient
Temperature (FODM121/2701/2705)
10000
Fig. 8 Normalized Current Transfer Ratio vs.
Ambient Temperature
(FODM121/2701/2705)
160
CTR – Normalized Current Transfer Ratio (%)
I
CEO
- Collector Dark Current (nA)
1000
V
CE
= 40V
140
I
F
= 5mA
V
CE
= 5V
Normalized to T
A
= 25 C
o
120
100
100
10
80
60
1
40
0.1
-40
20
-20
0
20
40
60
80
100
120
-40
-20
0
20
40
60
80
100
120
T
A
- Ambient Temperature (°C)
T
A
- Ambient Temperature (°C)
Fig. 9 Switching Time vs. Load Resistance
(FODM121/2701/2705)
1000
Fig. 10 Collector-Emitter Saturation Voltage
vs. Ambient Temperature
(FODM124)
V
CE(sat)
- Collector-Emitter Saturation Voltage(V)
0.35
I
F
= 1mA
I
C
= 0.5mA
V
CC
= 5V
T
A
= 25 C
o
I
F
= 5mA
t
OFF
I
F
= 16mA
0.30
Switching Time (µs)
0.25
100
0.20
0.15
10
t
S
0.10
0.05
t
ON
1
1
10
100
0.00
-40
-20
0
20
40
60
80
100
120
R
L
- Load Resistance (kΩ)
T
A
- Ambient Temperature (°C)
Fig. 11 Current Transfer Ratio vs.
Forward Current (FODM124)
T
A
= 25°C
V
CE
= 0.5V
Fig 12. Collector Current vs. Forward Current
(FODM124)
T
A
= 25°C
V
CE
= 0.5V
10
CTR – Current Transfer Ratio (%)
100
I
C
- Collector Current (mA)
1
0.1
10
0.1
1
10
0.01
0.1
1
10
I
F
- Forward Current (mA)
©2006 Fairchild Semiconductor Corporation
FODMXXX Rev. 1.1.4
I
F
- Forward Current (mA)
www.fairchildsemi.com
5
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