OPA365
OPA2365
SBOS365A − JUNE 2006 − REVISED JULY 2006
2.2V, 50MHz, Low-Noise,
Single-Supply Rail-to-Rail
OPERATIONAL AMPLIFIERS
FEATURES
D
D
D
D
D
D
D
D
D
D
RAIL-TO-RAIL INPUT
WITHOUT CROSSOVER
2.2V OPERATION
LOW OFFSET: 200µV
WIDE BANDWIDTH: 50MHz
CMRR: 100dB (min)
HIGH SLEW RATE: 25V/µs
LOW NOISE: 4.5nV//Hz
LOW THD+NOISE: 0.0006%
QUIESCENT CURRENT: 5mA (max)
microPACKAGE:
SOT23-5
DESCRIPTION
The OPAx365 zer
∅
-crossover series rail-to-rail high-
performance CMOS operational amplifiers are opti-
mized for very low voltage, single-supply applications.
Rail-to-rail input/output, low-noise (4.5nV/√Hz) and
high-speed operations (50MHz Gain Bandwidth) make
them ideal for driving sampling analog-to-digital con-
verters (ADCs). Applications incude audio, signal con-
ditioning, and sensor amplification. The OPA365 family
of op amps are well-suited for cell phone power amplifi-
er control loops.
Special features include excellent common-mode re-
jection ratio (CMRR), no input stage crossover distor-
tion, high input impedance and rail-to-rail input and out-
put swing. The input common-mode range includes
both the negative and positive supplies. The output volt-
age swing is within 10mV of the rails.
The OPA365 (single version) is available in the
micro-
SIZE SOT23-5 and SO-8 packages. The OPA2365
(dual version) is offered in the
microSIZE
DFN-8 (3mm
x 3mm) and SO-8 packages. All versions are specified
for operation from −40°C to +125°C. Single and dual
versions have identical specifications for maximum de-
sign flexibility.
APPLICATIONS
D
D
D
D
D
D
D
SIGNAL CONDITIONING
DATA ACQUISITION
PROCESS CONTROL
ACTIVE FILTERS
TEST EQUIPMENT
AUDIO
WIDEBAND AMPLIFIERS
PACKAGE
OPA365 vs COMPETITION
0
−20
THD+Noise Ratio (dB)
−40
−60
−80
Competitor A
−100
−120
1
2
3
V
IN
= V
OUT
(V
PP
)
4
5
Competitor B
V
IN
+5V
f
i
= 10kHz
BW = 30kHz
SOT23-5
SO-8
(1)
DFN-8
(1)
OPA365
OPA2365
n
n
n
n
(1) Available Q3, 2006.
OPA365
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments
semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Products
conform to specifications per the terms of Texas Instruments standard warranty.
Production processing does not necessarily include testing of all parameters.
Copyright
2006, Texas Instruments Incorporated
www.ti.com
OPA365
OPA2365
www.ti.com
SBOS365A − JUNE 2006 − REVISED JULY 2006
ABSOLUTE MAXIMUM RATINGS
(1)
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5.5V
Signal Input Terminals, Voltage
(2)
. . . . (V−) −0.5V to (V+) + 0.5V
Signal Input Terminals, Current
(2)
. . . . . . . . . . . . . . . . . . . .
±10mA
Output Short-Circuit
(3)
. . . . . . . . . . . . . . . . . . . . . . . . . Continuous
Operating Temperature . . . . . . . . . . . . . . . . . . . . . −40°C to +150°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . −65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
ESD Rating
Human Body Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4000V
Charged Device Model . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V
(1) Stresses above these ratings may cause permanent damage.
Exposure to absolute maximum conditions for extended periods
may degrade device reliability. These are stress ratings only, and
functional operation of the device at these or any other conditions
beyond those specified is not supported.
(2) Input terminals are diode-clamped to the power-supply rails.
Input signals that can swing more than 0.5V beyond the supply
rails should be current limited to 10mA or less.
(3) Short-circuit to ground, one amplifier per package.
This integrated circuit can be damaged by ESD. Texas
Instruments recommends that all integrated circuits be
handled with appropriate precautions. Failure to observe
proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to
complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could
cause the device not to meet its published specifications.
ORDERING INFORMATION
(1)
PRODUCT
OPA365
OPA2365
PACKAGE-LEAD
SOT23-5
SO-8
(2)
SO-8
(2)
DFN-8
(2)
PACKAGE DESIGNATOR
DBV
D
D
DRB
PACKAGE MARKING
OAVQ
O365A
O2365A
BRA
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI web site
at www.ti.com.
(2) Available Q3, 2006.
PIN CONFIGURATIONS
Top View
OPA365
V
OUT
V−
+IN
1
2
3
SOT23−5
4
−IN
5
V+
NC
(1)
−IN
+IN
V−
1
2
3
4
OPA365
8
7
6
5
SO−8
NC
(1)
V+
V
OUT
NC
(1)
V
OUT
A
−IN
A
+IN A
V
−
1
2
3
4
OPA2365
8
7
6
5
SO−8, DFN−8
V+
V
OUT
B
−IN
B
+IN B
(1) NC denotes no internal connection.
2
OPA365
OPA2365
www.ti.com
SBOS365A − JUNE 2006 − REVISED JULY 2006
ELECTRICAL CHARACTERISTICS: V
S
= +2.2V to +5.5V
Boldface
limits apply over the specified temperature range,
T
A
= −40°C to +125°C.
At T
A
= +25°C, R
L
= 10kΩ connected to V
S
/2, V
CM
= V
S
/2, and V
OUT
= V
S
/2, unless otherwise noted.
OPAx365
PARAMETER
OFFSET VOLTAGE
Input Offset Voltage
V
OS
Drift
dV
OS
/dT
vs Power Supply
PSRR
Channel Separation, dc
INPUT BIAS CURRENT
Input Bias Current
I
B
over Temperature
Input Offset Current
I
OS
NOISE
Input Voltage Noise, f = 0.1Hz to 10Hz
e
n
Input Voltage Noise Density, f = 100kHz
e
n
Input Current Noise Density, f = 10kHz
i
n
INPUT VOLTAGE RANGE
Common-Mode Voltage Range
V
CM
Common-Mode Rejection Ratio
CMRR
INPUT CAPACITANCE
Differential
Common-Mode
OPEN-LOOP GAIN
Open-Loop Voltage Gain
A
OL
TEST CONDITIONS
MIN
TYP
100
1
10
0.2
MAX
200
100
UNIT
µV
µV/°C
µV/V
µV/V
pA
pA
µV
PP
nV/√Hz
fA/√Hz
(V+) + 0.1
120
6
2
RL = 10kΩ, 100mV < VO < (V+) − 100mV
RL = 600Ω, 200mV
<
VO
<
(V+) − 200mV
RL = 600Ω, 200mV < VO < (V+) − 200mV
V
S
= 5V
G = +1
4V Step, G = +1
4V Step, G = +1
V
IN
x Gain > V
S
R
L
= 600Ω, V
O
= 4V
PP
, G = +1, f = 1kHz
100
100
94
120
120
V
dB
pF
pF
dB
dB
dB
MHz
V/µs
ns
ns
µs
%
V
S
= +2.2V to +5.5V
±0.2
±10
See Typical Characteristics
±0.2
±10
5
4.5
4
(V−) − 0.1
100
(V−) − 0.1V
3
V
CM
3
(V+) + 0.1V
FREQUENCY RESPONSE
Gain-Bandwidth Product
Slew Rate
Settling Time, 0.1%
0.01%
Overload Recovery Time
Total Harmonic Distortion + Noise
OUTPUT
Voltage Output Swing from Rail
over Temperature
Short-Circuit Current
Capacitive Load Drive
Open-Loop Output Impedance
POWER SUPPLY
Specified Voltage Range
Quiescent Current Per Amplifier
over Temperature
TEMPERATURE RANGE
Specified Range
Thermal Resistance
SOT23-5
SO-8
DFN-8
GBW
SR
t
S
THD+N
50
25
200
300
<
0.1
0.0006
R
L
= 10kΩ, V
S
= 5.5V
I
SC
C
L
f = 1MHz, I
O
= 0
V
S
I
Q
10
20
±65
See Typical Characteristics
30
2.2
5.5
5
5
+125
200
150
46
mV
mA
Ω
V
mA
mA
°C
°C/W
°C/W
°C/W
°C/W
I
O
= 0
4.6
−40
q
JA
3
OPA365
OPA2365
www.ti.com
SBOS365A − JUNE 2006 − REVISED JULY 2006
TYPICAL CHARACTERISTICS
At T
A
= +25°C, V
S
= +5V, and C
L
= 0pF, unless otherwise noted.
OPEN−LOOP GAIN/PHASE vs FREQUENCY
140
120
PSRR, CMRR (dB)
Voltage Gain (dB)
100
80
60
40
20
0
−20
10
100
1k
10k
100k
1M
10M
Frequency (Hz)
OFFSET VOLTAGE
PRODUCTION DISTRIBUTION
V
S
= 5.5V
−180
100M
Gain
−135
Phase
Phase (_ )
−90
−
45
0
140
POWER SUPPLY AND COMMON−MODE
REJECTION RATIO vs FREQUENCY
CMRR
120
100
80
PSRR
60
40
20
0
10
100
1k
10k
100k
1M
10M
100M
Frequency (Hz)
OFFSET VOLTAGE DRIFT
PRODUCTION DISTRIBUTION
V
S
= 5.5V
−200
−180
−
160
−
140
−
120
−100
−80
−60
−40
−20
0
20
40
60
80
100
120
140
160
180
200
Population
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
Offset Voltage Drift (
µ
V/
_
C)
INPUT BIAS CURRENT vs COMMON−MODE VOLTAGE
500
400
300
I
B
(pA)
200
V
CM
Specified Range
100
125
0
−
25
−0.5
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
V
CM
(V)
Offset Voltage (µV)
INPUT BIAS CURRENT vs TEMPERATURE
900
800
700
600
500
400
300
200
100
0
−50
−25
0
25
50
75
100
Temperature (_C)
4
Input Bias (pA)
Population
1000
OPA365
OPA2365
www.ti.com
SBOS365A − JUNE 2006 − REVISED JULY 2006
TYPICAL CHARACTERISTICS (continued)
At T
A
= +25°C, V
S
= +5V, and C
L
= 0pF, unless otherwise noted.
OUTPUT VOLTAGE vs OUTPUT CURRENT
3
2
Output Voltage (V)
1
0
−1
−2
−3
0
10
20
30
40
50
60
70
80
90
100
Output Current (mA)
−40_C
+125_ C
+25_ C
+25_ C
−40_C
V
S
=
±1.1V
V
S
=
±2.75V
Short−Circuit Current (mA)
70
60
50
40
30
20
10
0
−10
−20
−30
−40
−50
−60
−70
−80
SHORT−CIRCUIT CURRENT vs TEMPERATURE
I
SC
+
+125_ C
I
SC
−
−50
−25
0
25
50
75
100
125
Temperature (_ C)
QUIESCENT CURRENT vs TEMPERATURE
4.80
QUIESCENT CURRENT vs SUPPLY VOLTAGE
4.75
Quiescent Current (mA)
4.50
Quiescent Current (mA)
4.74
4.68
4.25
4.62
4.00
4.56
3.75
2.2 2.5
3.0
3.5
4.0
4.5
5.0
5.5
Supply Voltage (V)
4.50
−50
−25
0
25
50
75
100
125
Temperature (_ C)
0.1Hz to 10Hz
INPUT VOLTAGE NOISE
0.01
TOTAL HARMONIC DISTORTION + NOISE
vs FREQUENCY
G = 10, R
L
= 600
Ω
THD+N (%)
V
O
= 1V
RMS
2µV/div
0.001
V
O
= 1.448V
RMS
G = +1, R
L
= 600Ω
0.0001
1s/div
10
100
1k
Frequency (Hz)
V
O
= 1V
RMS
10k 100k
5
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