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PT550

产品描述Phototransistors Darlington Output Ver PT501 3-142mA
产品类别光电子/LED   
文件大小76KB,共6页
制造商Sharp Microelectronics
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PT550概述

Phototransistors Darlington Output Ver PT501 3-142mA

PT550规格参数

参数名称属性值
Product AttributeAttribute Value
制造商
Manufacturer
Sharp Microelectronics
产品种类
Product Category
Phototransistors
RoHSDetails
封装 / 箱体
Package / Case
TO-18
Peak Wavelength800 nm
Maximum On-State Collector Current100 mA
Collector- Emitter Voltage VCEO Max35 V
Dark Current1 uA
Rise Time350 us
Fall Time300 us
Pd-功率耗散
Pd - Power Dissipation
150 mW
最小工作温度
Minimum Operating Temperature
- 25 C
最大工作温度
Maximum Operating Temperature
+ 125 C
高度
Height
6.8 mm
长度
Length
5.7 mm
类型
Type
Phototransistor
宽度
Width
5.7 mm
Half Intensity Angle Degrees6 deg
NumOfPackaging1
工厂包装数量
Factory Pack Quantity
500

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PT550/PT550F
PT550/PT550F
s
Features
1. High sensitivity
PT550
I
C
: MIN.3mA at E
e
= 0.1mW/cm
2
PT550F
I
C
: MIN.3mA at E
e
= 1mW/cm
2
2. Narrow acceptance :
PT550
(
∆ θ
: TYP. ± 6˚ )
Wide acceptance :
PT550F
(
∆ θ
: TYP. ± 50˚ )
3. TO - 18 type standard package
TO-18 Type Phototransistor
with Base Terminal
s
Outline Dimensions
φ
4.7
±
0.1
6.8
MAX.
3.6
±
0.1
( Unit : mm )
φ4.7
±
0.1
φ
3.0
±
0.1
PT550F
(
(
20
±
1
4.5
PT550
20
φ
0.45
2.5
2.5
2
φ
2.5
φ
0.45
1
s
Applications
1. Optoelectronic switches, optoelectronic
counters
2. Smoke detectors
3. Infrared applied systems
0
1.
1.
0
3
3
2
φ
2.5
2 3
1.0
45
˚
φ
5.7
MAX.
1
45
˚
1.0
φ
5.7
MAX.
1
1 Collector ( Case ) 2 Base 3 Emitter
s
Absolute Maximum Ratings
Parameter
Collector-emitter voltage
Emitter-collector voltage
Collector-base voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
*1
Soldering temperature
Symbol
V
CEO
V
ECO
V
CBO
I
C
P
C
T
opr
T
stg
T
sol
Rating
35
6
35
100
150
- 25 to + 125
- 55 to + 150
260
( Ta = 25˚C )
Unit
V
V
V
mA
mW
˚C
˚C
˚C
*1 For 10 seconds at the position of 1.3mm from the bottom face of can package
s
Electro-optical Characteristics
Parameter
*2
( Ta = 25˚C )
Conditions
PT550
PT550F
V
CE
= 5V
V
CE
= 5V
E
e
= 0.1mW/cm
2
E
e
= 1mW/cm
2
V
CE
= 10V, E
e
= 0, I
B
= 0
I
C
= 1mA, I
B
= 0 I
C
= 1mA, I
B
= 0
E
e
= 0.1mW/cm
2
E
e
= 1mW/cm
2
-
V
CC
= 15V, I
C
= 1mA, R
L
= 1kΩ
MIN.
3
-
-
-
-
-
TYP.
20
10
- 7
-
800
350
300
MAX.
PT550
142
PT550F
150
10
-6
1.0
-
-
-
Unit
mA
A
V
nm
µ
s
µ
s
Symbol
I
C
I
CEO
V
CE ( sat )
λ
P
t
r
t
f
Collector current
Collector dark current
Collecter-emitter saturation
voltage
Peak sensitivity wavelength
Response
Rise time
Fall time
time
*2 E
e
: Irradiance by CIE standard light source A ( tungsten lamp )
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”

 
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