VSMY2853RG, VSMY2853G
www.vishay.com
Vishay Semiconductors
High Speed Infrared Emitting Diodes, 850 nm,
Surface Emitter Technology
VSMY2853RG
VSMY2853G
FEATURES
• Package type: surface mount
• Package form: GW, RGW
• Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.55
• Peak wavelength:
λ
p
= 850 nm
• High reliability
• High radiant power
22689
• Very high radiant intensity
• Angle of half intensity:
ϕ
= ± 28°
• Suitable for high pulse current operation
• Terminal configurations: gullwing or reverse gullwing
• Package matches with detector VEMD2503X01 series
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
As part of the
SurfLight
TM
portfolio, the VSMY2853 series
are infrared, 850 nm emitting diodes based on GaAlAs
surface emitter chip technology with extreme high radiant
intensities, high optical power and high speed, molded in
clear, untinted plastic packages (with lens) for surface
mounting (SMD).
APPLICATIONS
• IrDA compatible data transmission
• Miniature light barrier
• Photointerrupters
• Optical switch
• Emitter source for proximity sensors
• IR touch panels
• IR illumination
• 3D TV
PRODUCT SUMMARY
COMPONENT
VSMY2853RG
VSMY2853G
I
e
(mW/sr)
35
35
ϕ
(deg)
± 28
± 28
λ
p
(nm)
850
850
t
r
(ns)
10
10
Note
• Test conditions see table “Basic Characteristics“
ORDERING INFORMATION
ORDERING CODE
VSMY2853RG
VSMY2853G
Note
• MOQ: minimum order quantity
PACKAGING
Tape and reel
Tape and reel
REMARKS
MOQ: 6000 pcs, 6000 pcs/reel
MOQ: 6000 pcs, 6000 pcs/reel
PACKAGE FORM
Reverse gullwing
Gullwing
Rev. 1.2, 27-Mar-14
Document Number: 83480
1
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSMY2853RG, VSMY2853G
www.vishay.com
Vishay Semiconductors
TEST CONDITION
SYMBOL
V
R
I
F
t
p
/T = 0.5, t
p
=
100 μs
t
p
= 100 μs
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
acc. figure 7, J-STD-020
J-STD-051, soldered on PCB
T
sd
R
thJA
120
100
80
60
R
thJA
= 250 K/W
40
20
0
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
VALUE
5
100
200
1
190
100
-40 to +85
-40 to +100
260
250
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
200
180
P
V
- Power Dissipation (mW)
160
140
120
100
80
60
40
20
0
0
10
20
30
40
50
60
70 80
90 100
R
thJA
= 250 K/W
I
F
- Forward Current (mA)
0
21891
10
20 30 40
50 60 70 80
90 100
21890
T
amb
- Ambient Temperature (°C)
T
amb
- Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of V
F
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of radiant
power
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of
λ
p
Rise time
Fall time
I
F
= 100 mA
I
F
= 30 mA
I
F
= 30 mA
I
F
= 100 mA, 20 % to 80 %
I
F
= 100 mA, 20 % to 80 %
V
R
= 0 V, f = 1 MHz, E = 0
mW/cm
2
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 μs
I
F
= 100 mA, t
p
= 20 ms
I
F
= 100 mA
TEST CONDITION
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 μs
I
F
= 1 mA
I
F
= 10 mA
SYMBOL
V
F
V
F
TK
VF
TK
VF
I
R
C
J
I
e
I
e
φ
e
TKφ
e
ϕ
λ
p
Δλ
TKλ
p
t
r
t
f
840
20
MIN.
TYP.
1.65
2.9
-1.45
-1.3
not designed for reverse operation
125
35
300
55
-0.35
± 28
850
30
0.25
10
10
870
50
MAX.
1.9
UNIT
V
V
mV/K
mV/K
μA
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
Rev. 1.2, 27-Mar-14
Document Number: 83480
2
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSMY2853RG, VSMY2853G
www.vishay.com
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Vishay Semiconductors
10
1
Φ
e, rel
- Relative Radiant Power
t
p
= 100 µs
I
F
= 30 mA
0.75
I
F
- Forward Current (A)
1
0.1
0.5
0.01
0.25
0.001
0
22097
0.5
1
1.5
2
2.5
3
3.5
21776-1
0
650
750
850
950
V
F
- Forward Voltage (V)
λ
- Wavelength (nm)
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 5 - Relative Radiant Power vs. Wavelength
0°
1000
10°
20°
30°
I
e
- Radiant Intensity (mW/sr)
t
p
= 100 µs
100
I
e rel
- Relative Radiant Intensity
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
10
1
0.1
0.001
0.01
0.1
1
22688
I
F
- Forward Current (A)
Fig. 4 - Radiant Intensity vs. Forward Current
Fig. 6 - Relative Radiant Intensity vs. Angular Displacement
SOLDER PROFILE
300
250
255 °C
240 °C
217 °C
max. 260 °C
245 °C
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
Temperature (°C)
200
max. 30 s
150
max. 120 s
100
50
0
0
50
100
150
200
250
300
max. ramp up 3 °C/s max. ramp down 6 °C/s
max. 100 s
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 4 weeks
Conditions: T
amb
< 30 °C, RH < 60 %
Moisture sensitivity level 2a, acc. to J-STD-020.
DRYING
Time (s)
19841
Fig. 7 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
Rev. 1.2, 27-Mar-14
Document Number: 83480
3
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
ϕ
- Angular Displacement
VSMY2853RG, VSMY2853G
www.vishay.com
PACKAGE DIMENSIONS
in millimeters:
VSMY2853RG
Vishay Semiconductors
Rev. 1.2, 27-Mar-14
Document Number: 83480
4
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSMY2853RG, VSMY2853G
www.vishay.com
PACKAGE DIMENSIONS
in millimeters:
VSMY2853G
Vishay Semiconductors
Rev. 1.2, 27-Mar-14
Document Number: 83480
5
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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