TSAL7200
Vishay Semiconductors
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
Description
TSAL7200 is a high efficiency infrared emitting diode
in GaAlAs on GaAs technology, molded in a clear
plastic package.
In comparison with the standard GaAs on GaAs tech-
nology these emitters achieve more than 100 % radi-
ant power improvement at a similar wavelength.
The forward voltages at low current and at high pulse
current roughly correspond to the low values of the
standard technology. Therefore these emitters are
ideally suitable as high performance replacements of
standard emitters.
94
8389
Features
• Extra high radiant power and radiant
intensity
• High reliability
e2
• Low forward voltage
• Suitable for high pulse current operation
• Standard T-1¾ (∅ 5 mm) package
• Angle of half intensity
ϕ
= ± 17°
• Peak wavelength
λ
p
= 940 nm
• Good spectral matching to Si photodetectors
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
• Infrared remote control units with high power
requirements
• Free air transmission systems
• Infrared source for optical counters and card
readers
• IR source for smoke detectors
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/
ambient
t
≤
5 sec, 2 mm from case
t
p
/T = 0.5, t
p
= 100 µs
t
p
= 100 µs
Test condition
Symbol
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
Value
5
100
200
1.5
210
100
- 55 to + 100
- 55 to + 100
260
350
Unit
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
Document Number 81012
Rev. 1.6, 28-Nov-06
www.vishay.com
1
TSAL7200
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Temp. coefficient of V
F
Reverse current
Junction capacitance
Test condition
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 µs
I
F
= 100 mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
Symbol
V
F
V
F
TK
VF
I
R
C
j
25
Min
Typ.
1.35
2.6
- 1.3
10
Max
1.6
3
Unit
V
V
mV/K
µA
pF
Optical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Radiant intensity
Radiant power
Temp. coefficient of
φ
e
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temp. coefficient of
λ
p
Rise time
Fall time
Virtual source diameter
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
method: 63 % encircled energy
Test condition
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1.0 A, t
p
= 100 µs
I
F
= 100 mA, t
p
= 20 ms
I
F
= 20 mA
Symbol
I
e
I
e
φ
e
TKφ
e
ϕ
λ
p
Δλ
TKλ
p
t
r
t
f
∅
Min
40
340
Typ.
60
500
35
- 0.6
± 17
940
50
0.2
800
800
2.4
Max
200
Unit
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
mm
Typical Characteristics
T
amb
= 25 °C, unless otherwise specified
250
P
V
- Power Dissipation (MW)
250
I
F
- Forward Current (mA)
200
200
150
R
thJA
100
150
100
R
thJA
50
0
0
20
40
60
8
0
100
50
0
0
20
40
60
80
100
94 7957
T
amb
- Ambient Temperature (°C)
96 11986
T
amb
- Ambient Temperature (°C)
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 2. Forward Current vs. Ambient Temperature
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2
Document Number 81012
Rev. 1.6, 28-Nov-06
TSAL7200
Vishay Semiconductors
10
1
I
e
- Radiant Intensity (mW/sr)
I
F
- Forward Current (A)
1000
I
FSM
= 1 A (Single Pulse)
t
p
/T = 0.01
10
0
0.05
0.1
0.5
1.0
10
-1
10
-2
100
10
1
0.1
10
-1
10
0
10
1
10
2
13601
10
0
96 11987
t
p
- Pulse Duration (ms)
10
1
10
2
10
3
I
F
- Forward Current (mA)
10
4
Figure 3. Pulse Forward Current vs. Pulse Duration
Figure 6. Radiant Intensity vs. Forward Current
10
4
1000
I
F
- Forward Current (mA)
10
3
Φ
e
- Radiant Power (mW)
4
13602
100
10
2
t
P
= 100
µs
t
P
/T = 0.001
10
1
10
1
10
0
0
13600
1
2
3
0.1
10
0
V
F
- Forward
Voltage
(V)
10
1
10
2
10
3
I
F
- Forward Current (mA)
10
4
Figure 4. Forward Current vs. Forward Voltage
Figure 7. Radiant Power vs. Forward Current
V
Frel
- Relative Forward
Voltage
(V)
1.2
1.1
I
F
= 10 mA
1.0
0.9
I
e rel
;
Φ
e rel
1.6
1.2
I
F
= 20 mA
0.8
0.8
0.7
0
20
40
60
80
100
0.4
0
- 10 0 10
94 7993
50
100
140
94 7990
T
amb
- Ambient Temperature (°C)
T
amb
- Ambient Temperature (°C)
Figure 5. Relative Forward Voltage vs. Ambient Temperature
Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature
Document Number 81012
Rev. 1.6, 28-Nov-06
www.vishay.com
3
TSAL7200
Vishay Semiconductors
0°
10°
20°
30°
1.25
1.0
I
e rel
- Relative Radiant Intensity
Φ
rel
- Relative Radiant Power
e
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
0.2
0.4
0.6
0.75
0.5
0.25
I
F
= 100 mA
0
890
940
λ
-
Wavelength
(nm)
990
14291
14329
Figure 9. Relative Radiant Power vs. Wavelength
Figure 10. Relative Radiant Intensity vs. Angular Displacement
Package Dimensions in mm
19257
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Document Number 81012
Rev. 1.6, 28-Nov-06
TSAL7200
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 81012
Rev. 1.6, 28-Nov-06
www.vishay.com
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