VSMB3940X01
www.vishay.com
Vishay Semiconductors
High Speed Infrared Emitting Diode, 940 nm,
GaAlAs Double Hetero
FEATURES
• Package type: surface mount
• Package form: PLCC-2
• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75
• Peak wavelength:
λ
p
= 940 nm
• High reliability
• High radiant power
• High radiant intensity
948553
• Angle of half intensity:
ϕ
= ± 60°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: f
c
= 24 MHz
• Good spectral matching with Si photodetectors
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Lead (Pb)-free reflow soldering acc. J-STD-020
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
VSMB3940X01 is an infrared, 940 nm emitting diode in
GaAlAs double hetero (DH) technology with high radiant
power and high speed, molded in a PLCC-2 package for
surface mounting (SMD).
APPLICATIONS
• IrDA compatible data transmission
• Miniature light barrier
• Photointerrupters
• Optical switch
• Control and drive circuits
• Shaft encoders
PRODUCT SUMMARY
COMPONENT
VSMB3940X01
I
e
(mW/sr)
13
ϕ
(deg)
± 60
λ
p
(nm)
940
t
r
(ns)
15
Note
• Test conditions see table “Basic Characteristics“
ORDERING INFORMATION
ORDERING CODE
VSMB3940X01-GS08
VSMB3940X01-GS18
Note
• MOQ: minimum order quantity
PACKAGING
Tape and reel
Tape and reel
REMARKS
MOQ: 7500 pcs, 1500 pcs/reel
MOQ: 8000 pcs, 8000 pcs/reel
PACKAGE FORM
PLCC-2
PLCC-2
Rev. 1.7, 05-Dec-13
Document Number: 81894
1
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSMB3940X01
www.vishay.com
Vishay Semiconductors
TEST CONDITION
SYMBOL
V
R
I
F
t
p
/T = 0.5, t
p
= 100 μs
t
p
= 100 μs
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
t
≤
5 s, 2 mm from case
J-STD-051, leads 7 mm,
soldered on PCB
T
sd
R
thJA
VALUE
5
100
200
1.5
160
100
-40 to +85
-40 to +100
260
250
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
180
120
100
80
60
P
V
- Power Dissipation (mW)
160
140
120
100
80
60
40
20
0
0
10
20 30
40
50
60
70 80
90
100
R
thJA
= 250 K/W
I
F
- Forward Current (mA)
R
thJA
= 250 K/W
40
20
0
0
10
20 30 40
50 60 70 80
90 100
21343
T
amb
- Ambient Temperature (°C)
21344
T
amb
- Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of V
F
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of
φ
e
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of
λ
p
Rise time
Fall time
Cut-off frequency
Virtual source diameter
I
F
= 30 mA
I
F
= 30 mA
I
F
= 30 mA
I
F
= 100 mA, 20 % to 80 %
I
F
= 100 mA, 20 % to 80 %
I
DC
= 70 mA, I
AC
= 30 mA pp
TEST CONDITION
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 μs
I
F
= 1 mA
I
F
= 100 mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0 mW/cm
2
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 μs
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 mA
I
F
= 100 mA
SYMBOL
V
F
V
F
TK
VF
TK
VF
I
R
C
J
I
e
I
e
φ
e
TKφ
e
TKφ
e
ϕ
λ
p
Δλ
TKλ
p
t
r
t
f
f
c
d
7
70
13
130
40
-1.1
-0.51
± 60
940
25
0.25
15
15
24
0.5
21
MIN.
1.15
TYP.
1.35
2.2
-1.8
-1.1
10
MAX.
1.6
UNIT
V
V
mV/K
mV/K
μA
pF
mW/sr
mW/sr
mW
%/K
%/K
deg
nm
nm
nm/K
ns
ns
MHz
mm
Rev. 1.7, 05-Dec-13
Document Number: 81894
2
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSMB3940X01
www.vishay.com
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Vishay Semiconductors
1000
180
I
e rel
- Relative Radiant Intensity (%)
I
F
= 1 mA
160
140
120
I
F
= 100 mA
100
80
60
t
p
= 20 ms
40
- 60 - 40 - 20
0
20
40
60
80
100
I
F
- Forward Current (mA)
100
10
t
p
= 100 µs
t
p
/T= 0.001
1
0
1
2
3
21534
V
F
- Forward Voltage (V)
21444
T
amb
- Ambient Temperature (°C)
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 6 - Relative Radiant Intensity vs. Ambient Temperature
V
F, rel
- Relative Forward Voltage (%)
110
108
106
104
102
100
98
96
94
92
90
- 40
- 20
0
20
40
60
80
100
I
F
= 1 mA
t
p
= 20 ms
I
F
= 100 mA
I
F
= 10 mA
100
Φ
e rel
- Relative Radiant Power (%)
90
80
70
60
50
40
30
20
10
0
840
880
920
960
1000
1040
I
F
= 30 mA
21443
T
amb
- Ambient Temperature (°C)
21445
λ
- Wavelength (nm)
Fig. 4 - Relative Forward Voltage vs. Ambient Temperature
Fig. 7 - Relative Radiant Power vs. Wavelength
0°
1000
10°
20°
30°
I
e, rel
- Relative Radiant Intensity
I
e
- Radiant Intensity (mW/sr)
100
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
10
1
t
P
= 0.1 ms
0.1
1
21420
10
100
1000
948013-1
I
F
- Forward Current (mA)
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
Rev. 1.7, 05-Dec-13
Document Number: 81894
3
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
ϕ
- Angular Displacement
VSMB3940X01
www.vishay.com
PACKAGE DIMENSIONS
in millimeters
3.5
±0.2
1.75
±0.1
Vishay Semiconductors
0.8
Pin identification
0.9
2.8
±0.15
Technical drawings
according to DIN
specifications
C
A
2.2
Dimensions in mm
Ø2.4
3
+0.15
Drawing-No.: 6.541-5067.01-4
Issue: 6; 23.09.13
Mounting Pad Layout
1.2
Area covered
with
solderresist
2.6 (2.8)
1.6 (1.9)
4
Dimensions: Reflow and vapor phase (wave
soldering)
SOLDER PROFILE
300
250
255 °C
240 °C
217 °C
max. 260 °C
245 °C
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
Temperature (°C)
200
max. 30 s
150
max. 120 s
100
50
0
0
50
100
150
200
250
300
max. ramp up 3 °C/s max. ramp down 6 °C/s
max. 100 s
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 168 h
Conditions: T
amb
< 30 °C, RH < 60 %
Moisture sensitivity level 3, acc. to J-STD-020
DRYING
Time (s)
19841
Fig. 9 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
Rev. 1.7, 05-Dec-13
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
Document Number: 81894
4
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
4
VSMB3940X01
www.vishay.com
TAPE AND REEL
PLCC-2 components are packed in antistatic blister tape
(DIN IEC (CO) 564) for automatic component insertion.
Cavities of blister tape are covered with adhesive tape.
4.5
3.5
Adhesive tape
Vishay Semiconductors
10.0
9.0
120°
2.5
1.5
Identification
Label:
Vishay
type
group
tape code
production
code
quantity
94 8670
13.00
12.75
63.5
60.5
Blister tape
180
178
14.4 max.
94 8665
Component cavity
Fig. 10 - Blister Tape
3.5
3.1
2.2
2.0
Fig. 13 - Dimensions of Reel-GS08
10.4
8.4
120°
5.75
5.25
3.6
3.4
1.85
1.65
4.0
3.6
8.3
7.7
4.5
3.5
2.5
1.5
Identification
Label:
Vishay
type
group
tape code
production
code
quantity
13.00
12.75
62.5
60.0
1.6
1.4
4.1
3.9
2.05
1.95
4.1
3.9
0.25
94 8668
Fig. 11 - Tape Dimensions in mm for PLCC-2
321
329
14.4 max.
18857
MISSING DEVICES
A maximum of 0.5 % of the total number of components per
reel may be missing, exclusively missing components at the
beginning and at the end of the reel. A maximum of three
consecutive components may be missing, provided this gap
is followed by six consecutive components.
De-reeling direction
94 8158
Fig. 14 - Dimensions of Reel-GS18
COVER TAPE REMOVAL FORCE
The removal force lies between 0.1 N and 1.0 N at a removal
speed of 5 mm/s. In order to prevent components from
popping out of the blisters, the cover tape must be pulled off
at an angle of 180° with regard to the feed direction.
> 160 mm
40 empty
compartments
min. 75 empty
compartments
Tape leader
Carrier leader
Carrier trailer
Fig. 12 - Beginning and End of Reel
The tape leader is at least 160 mm and is followed by a
carrier tape leader with at least 40 empty compartements.
The tape leader may include the carrier tape as long as the
cover tape is not connected to the carrier tape. The least
component is followed by a carrier tape trailer with a least
75 empty compartements and sealed with cover tape.
Rev. 1.7, 05-Dec-13
Document Number: 81894
5
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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