A Business Partner of Renesas Electronics Corporation.
PS2933-1
HIGH COLLECTOR TO EMITTER VOLTAGE
4-PIN ULTRA SMALL FLAT-LEAD
PHOTOCOUPLER
DESCRIPTION
Data Sheet
R08DS0115EJ0100
Rev.1.00
Nov 29, 2013
The PS2933-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon
phototransistor in one package for high density mounting applications.
An ultra small flat-lead package has been provided which realizes a reduction in mounting area of about 30% compared
with the PS28xx series.
FEATURES
•
•
•
•
•
Ultra small flat-lead package (4.6 (L)
×
2.5 (W)
×
2.1 (H) mm)
High collector to emitter voltage (V
CEO
= 350 V)
High isolation voltage (BV = 2 500 Vr.m.s.)
Ordering number of taping product: PS2933-1-F3: 3 500 pcs/reel
Safety standards
•
UL approved: No. E72422
•
BSI approved (BS EN 60065, BS EN 60950)
•
DIN EN 60747-5-5 (VDE 0884-5) approved (Option)
<R>
PIN CONNECTION
Top View
4
3
1. Anode
2. Cathode
3. Emitter
4. Collector
APPLICATIONS
•
Hybrid IC
•
Telephone, Exchange equipment, FAX
1
2
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R08DS0115EJ0100 Rev.1.00
Nov 29, 2013
Page 1 of 12
A Business Partner of Renesas Electronics Corporation.
PS2933-1e
<R>
PACKAGE DIMENSIONS (UNIT: mm)
2.5±0.3
4
3
R
1
2
5.0±0.2
2.1 MAX.
0.4±0.1
1.27
0.15
+0.1
–0.05
0.2±0.1
<R>
MARKING EXAMPLE
Ni/Pd/Au PLATING
Last number of
type No. : 33
33
R
*1
Company initial
(Engraved R)
601
No. 1 pin
mark
(Nicked
corner)
Assembly lot
6 01
Week assembled
Year Assembled
(Last 1 Digit)
*1
Bar : Pb-Free
PHOTOCOUPLER CONSTRUCTION
Parameter
Air Distance
Creepage Distance
Isolation Distance
MIN.
4 mm
4 mm
0.4 mm
R08DS0115EJ0100 Rev.1.00
Nov 29, 2013
4.1 MIN.
4.6±0.2
Page 2 of 12
A Business Partner of Renesas Electronics Corporation.
PS2933-1e
<R>
ORDERING INFORMATION
Part Number
Order Number
Solder Plating
Specification
Pb-Free
(Ni/Pd/Au)
Packing Style
Safety Standard
Approval
Standard products
(UL, BSI approved)
UL, BSI,
DIN EN 60747-5-5
(VDE 0884-5)
Approved (Option)
Application
Part
*1
Number
PS2933-1
PS2933-1
PS2933-1-F3
PS2933-1-V
PS2933-1-AX
PS2933-1-F3-
AX
PS2933-1-V-AX
50 pcs (Tape 50 pcs cut)
Embossed Tape 3 500
pcs/reel
50 pcs (Tape 50 pcs cut)
Embossed Tape 3 500
pcs/reel
PS2933-1-V-F3 PS2933-1-V-F3-
AX
Note:
*1. For the application of the Safety Standard, following part number should be used.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, unless otherwise specified)
Diode
Parameter
Forward Current
Forward Current Derating
Peak Forward Current
Power Dissipation
Reverse Voltage
Collector to Emitter Voltage
Emitter to Collector Voltage
Collector Current
Power Dissipation Derating
Power Dissipation
*1
Symbol
I
F
Δ
I
F
/°C
I
FP
P
D
V
R
V
CEO
V
ECO
I
C
Δ
P
C
/°C
P
C
BV
P
T
T
A
T
stg
Ratings
50
0.5
0.5
60
6
350
0.3
60
1.2
120
2 500
160
−55
to +100
−55
to +150
Unit
mA
mA/°C
A
mW
V
V
V
mA
mW/°C
mW
Vr.m.s.
mW
°C
°C
Detector
Isolation Voltage
*2
Total Power Dissipation
Operating Ambient Temperature
Storage Temperature
Notes: *1. PW = 100
μ
s, Duty Cycle = 1%
*2. AC voltage for 1 minute at T
A
= 25°C, RH = 60% between input and output.
Pins 1-2 shorted together, 3-4 shorted together.
R08DS0115EJ0100 Rev.1.00
Nov 29, 2013
Page 3 of 12
A Business Partner of Renesas Electronics Corporation.
PS2933-1e
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
Diode
Parameter
Forward Voltage
Reverse Current
Terminal Capacitance
Collector to Emitter
Current
Current Transfer Ratio
(I
C
/I
F
)
Collector Saturation
Voltage
Isolation Resistance
Isolation Capacitance
Rise Time
Fall Time
Note:
*1
*1
Transistor
Coupled
Symbol
Conditions
V
F
I
F
= 1 mA
I
R
V
R
= 5 V
C
t
V = 0 V, f = 1 MHz
V
CE
= 350V
I
CEO
CTR
V
CE(SAT)
R
I-O
C
I-O
t
r
t
f
I
F
= 1 mA, V
CE
= 2 V
I
F
= 1 mA, I
C
= 2 mA
V
I-O
= 1 kV
DC
V = 0 V, f = 1 MHz
V
CC
= 5 V, I
C
= 10 mA, R
L
= 100
Ω
MIN.
0.9
TYP.
1.1
15
MAX.
1.3
5
400
Unit
V
μ
A
pF
nA
%
V
Ω
pF
400
2 000
0.8
4 500
1
10
11
0.4
20
5
μ
s
*1. Test circuit for switching time
<R>
Pulse Input
PW = 1 ms
Duty cycle = 1/10
V
CC
Input
td
ton
ts
toff
90%
I
F
V
OUT
Output
10%
tr
tf
R08DS0115EJ0100 Rev.1.00
Nov 29, 2013
Page 4 of 12
A Business Partner of Renesas Electronics Corporation.
PS2933-1e
TYPICAL CHARACTERISTICS (T
A
= 25°C, unless otherwise specified)
MAXIMUM FORWARD CURRENT vs.
AMBIENT TEMPERATURE
Transistor Power Dissipation P
C
(mW)
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
140
120
100
80
60
40
20
0
25
50
75
100
125
80
Maximum Forward Current I
F
(mA)
60
40
0.5 mA/°C
20
1.2 mW/°C
0
25
50
75
100
125
Ambient Temperature T
A
(°C)
Ambient Temperature T
A
(°C)
FORWARD CURRENT vs.
FORWARD VOLTAGE
100
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
60
I
F
= 5 mA
Collector Current I
C
(mA)
Forward Current I
F
(mA)
50
2 mA
40
30
20
10
0.5 mA
1 mA
10
T
A
= +100°C
+60°C
+25°C
1
0°C
–25°C
–50°C
0.1
0.01
0.0
0.5
1.0
1.5
2.0
0
1
2
3
4
5
Forward Voltage V
F
(V)
Collector to Emitter Voltage V
CE
(V)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
Collector to Emitter Dark Current I
CEO
(nA)
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
100
100 000
V
CEO
= 300 V
CTR = 1 068%
2 290%
4 360%
Collector Current I
C
(mA)
10 000
1 000
10
I
F
= 5 mA
2 mA
1 mA
0.5 mA
1
0.7
100
10
1
–50
–25
0
25
50
75
100
0.8
0.9
1.0
Ambient Temperature T
A
(°C)
Collector Saturation Voltage V
CE(sat)
(V)
Remark
The graphs indicate nominal characteristics.
R08DS0115EJ0100 Rev.1.00
Nov 29, 2013
Page 5 of 12
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