TSHG5410
www.vishay.com
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm,
GaAlAs Double Hetero
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• Peak wavelength:
λ
p
= 850 nm
•
•
•
•
High reliability
High radiant power
High radiant intensity
Angle of half intensity:
ϕ
= ± 18°
94 8390
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: f
c
= 18 MHz
DESCRIPTION
TSHG5410 is an infrared, 850 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a clear, untinted plastic package.
• Good spectral matching with CMOS cameras
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
**
Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• Infrared radiation source for operation with CMOS
cameras
• High speed IR data transmission
PRODUCT SUMMARY
COMPONENT
TSHG5410
I
e
(mW/sr)
90
ϕ
(deg)
± 18
λ
p
(nm)
850
tr (ns)
20
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
TSHG5410
Note
• MOQ: minimum order quantity
PACKAGING
Bulk
REMARKS
MOQ: 4000 pcs, 4000 pcs/bulk
PACKAGE FORM
T-1¾
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Rev. 1.3, 23-Aug-11
t
≤
5 s, 2 mm from case
J-STD-051, leads 7 mm,
soldered on PCB
t
p
/T = 0.5, t
p
= 100 μs
t
p
= 100 μs
TEST CONDITION
SYMBOL
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
5
100
200
1
180
100
- 40 to + 85
- 40 to + 100
260
230
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
Document Number: 81811
1
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TSHG5410
www.vishay.com
Vishay Semiconductors
200
180
120
100
80
R
thJA
= 230 K/W
60
40
20
0
0
10
20
30
40
50
60
70 80
90 100
21143
P
V
- Power Dissipation (mW)
140
120
100
80
60
40
20
0
R
thJA
= 230 K/W
I
F
- Forward Current (mA)
160
0
10
20 30 40
50 60 70 80
90 100
21142
T
amb
- Ambient Temperature (°C)
T
amb
- Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 1 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of V
F
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of
φ
e
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of
λ
p
Rise time
Fall time
Cut-off frequency
Virtual
source diameter
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
DC
= 70 mA, I
AC
= 30 mA pp
TEST CONDITION
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 μs
I
F
= 1 mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 μs
I
F
= 100 mA, t
p
= 20 ms
I
F
= 100 mA
SYMBOL
V
F
V
F
TK
VF
I
R
C
j
I
e
I
e
φ
e
TKφ
e
ϕ
λ
p
Δλ
TKλ
p
t
r
t
f
f
c
d
820
45
125
90
900
55
- 0.35
± 18
850
40
0.25
20
13
18
2.1
880
135
MIN.
TYP.
1.5
2.3
- 1.8
10
MAX.
1.8
UNIT
V
V
mV/K
μA
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
MHz
mm
Rev. 1.3, 23-Aug-11
Document Number: 81811
2
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TSHG5410
www.vishay.com
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Vishay Semiconductors
1000
t
p
/T = 0.01
0.02
T
amb
< 50 °C
1000
I
F
- Forward Current (mA)
Radiant Power (mW)
e
-
0.05
0.1
100
10
0.2
0.5
100
0.01
1
0.1
0.1
1
10
100
16971
1
16031
t
p
- Pulse Duration (ms)
10
100
I
F
- Forward Current (mA)
1000
Fig. 2 - Pulse Forward Current vs. Pulse Duration
Fig. 5 - Radiant Power vs. Forward Current
1000
Φ
e, rel
- Relative Radiant Power
1.25
1.0
I
F
- Forward Current (mA)
100
t
p
= 100 µs
t
p
/T = 0.001
0.75
0.5
0.25
0
10
1
0
18873
3
2
V
F
- Forward Voltage (V)
1
4
16972
800
850
900
λ-
Wavelength
(nm)
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 6 - Relative Radiant Power vs. Wavelength
1000
0°
10°
20°
30°
I
e rel
- Relative Radiant Intensity
I
e
- Radiant Intensity (mW/sr)
40°
1.0
0.9
0.8
50°
60°
70°
80°
0.7
0.6
0.4
0.2
0
100
10
t
P
= 0.1 ms
1
1
10
100
1000
21355
21308
I
F
- Forward Current (mA)
Fig. 4 - Radiant Intensity vs. Forward Current
Fig. 7 - Relative Radiant Intensity vs. Angular Displacement
Rev. 1.3, 23-Aug-11
Document Number: 81811
3
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
ϕ
- Angular Displacement
TSHG5410
www.vishay.com
PACKAGE DIMENSIONS
in millimeters
Vishay Semiconductors
A
C
7.7 ± 0.15
Ø 5.8 ± 0.15
R2.49 (sphere)
8.7 ± 0.3
(4.5)
12.3 ± 0.3
< 0.7
35.3 ± 0.55
Area not plane
Ø 5 ± 0.15
1.1 ± 0.25
1 min.
+ 0.15
0.5 - 0.05
+ 0.15
0.5 - 0.05
technical drawings
according to DIN
specifications
2.54 nom.
Drawing-No.: 6.544-5258.11-4
Issue: 2; 19.05.09
21797
Rev. 1.3, 23-Aug-11
Document Number: 81811
4
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000
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