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SZM-2066Z: 产品描述2.4-2.7GHz 2W Power Amplifier; 文件大小640KB，共13页; 制造商SIRENZA; 官网地址http://www.sirenza.com/

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SZM-2066Z概述

2.4-2.7GHz 2W Power Amplifier

SZM-2066Z文档预览

Preliminary

Product Description

Sirenza Microdevices’ SZM-2066Z is a high linearity class AB

Heterojunction Bipolar Transistor (HBT) amplifier housed in a

low-cost surface-mountable plastic Q-FlexN multi-chip module

package. This HBT amplifier is made with InGaP on GaAs

device technology and fabricated with MOCVD for an ideal

combination of low cost and high reliability.

This product is specifically designed as a final or driver stage

for 802.16 and 802.11b/g equipment in the 2.4-2.7 GHz

bands. It can run from a 3V to 5V supply. The external output

match and bias adjustability allows load line optimization for

other applications or over narrower bands. It features an out-

put power detector, on/off power control and high RF overdrive

robustness. This product features a RoHS compliant and

Green package with matte tin finish, designated by the ‘Z’ suf-

fix.

SZM-2066Z

2.4-2.7GHz 2W Power Amplifier

RoHS Compliant

Green

Package

6mm x 6mm QFN Package

Functional Block Diagram

Vcc = 5V

RFIN

RFOUT

Vbias = 5V

Stage 1

Bias

Stage 2

Bias

Stage 3

Bias

•

Product Features

P1dB = 33.5dBm @ 5V

Three Stages of Gain: 37dB

802.11g 54Mb/s Class AB Performance

Pout = 26dBm @ 2.5% EVM, Vcc 5V, 690mA

Active Bias with Adjustable Current

On-chip Output Power Detector

Low Thermal Resistance

Power up/down control < 1μs

Applications

ower

Up/Dow n

Control

ower

Detector

•

802.16 WiMAX Driver or Output Stage

802.11b/g WLAN, WiFi

Key Specifications

Symbol

1dB

Pout

IM3

IRL

ORL

Vdet Range

VPC

leak

th, j-l

Parameters: Test Conditions, 2.5-2.7GHz App circuit,

= 50Ω, V

= 5.0V, Iq = 583mA, T

= 30ºC

Frequency of Operation

Output Power at 1dB Compression – 2.7GHz

Small Signal Gain – 2.7GHz

Output power at 2.5% EVM 802.11g 54Mb/s - 2.7GHz

Third Order Suppression (Pout=23dBm per tone) - 2.7GHz

Noise Figure at 2.7 GHz

Worst Case Input Return Loss 2.5-2.7GHz

Worst Case Output Return Loss 2.5-2.7GHz

Output Voltage Range for Pout=10dBm to 33dBm

Quiescent Current (V

= 5V)

Power Up Control Current (V

=5V, ( I

VPC1

VPC2

+ I

VPC3

)

Vcc Leakage Current (V

= 5V, V

= 0V)

Thermal Resistance (junction - lead)

Unit

MHz

dBm

dBc

µA

ºC/W

503

7.5

12.5

Min.

2500

32.0

32.2

33.5

33.7

26.0

-45

7.7

10.5

15.5

0.9 to 1.8

583

663

-40

Typ.

Max.

2700

The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions.

Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without

notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product

for use in life-support devices and/or systems.

303 South Technology Court Broomfield, CO 80021

Phone: (800) SMI-MMIC

http://www.sirenza.com

EDS-104641 Rev C

Preliminary

SZM-2066Z 2.4-2.7GHz 2W Power Amp

Typical Performance with appropriate app circuit(Vcc=5V, Icq=583mA, * 802.11g 54Mb/s 64QAM)

Parameter

Gain @ Pout=26dBm

P1dB

Pout @ 2.5% EVM*

Current @ Pout 2.5% EVM*

Input Return Loss

Output Return Loss

Units

dBm

**2.4GHz

37.5

34.6

703

-12.1

-27

2.5GHz

36.9

33.5

710

-11.5

-15.6

2.6GHz

36.5

33.5

700

-10.8

-28

2.7GHz

34.6

33.9

26.5

712

-10.5

-18.5

**Measured with 2.4-2.5GHz Appication circuit. See page 11 for details.

Absolute Maximum Ratings

Parameters

VC3 Collector Bias Current (I

VC3

)

VC2 Collector Bias Current (I

VC2

)

VC1 Collector Bias Current (I

VC1

)

****Device Voltage (V

)

Power Dissipation

Operating Lead Temperature (T

)

***Max CW RF output Power for 50 ohm

continuous long term operation

Max CW RF Input Power for 50 ohm out-

put load

Max CW RF Input Power for 10:1 VSWR

RF out load

Storage Temperature Range

Operating Junction Temperature (T

)

ESD Human Body Model

Value

1500

500

150

9.0

-40 to +85

-40 to +150

+150

1000

Unit

ºC

dBm

ºC

Caution: ESD Sensitive

Appropriate precaution in handling, packaging

and testing devices must be observed.

Operation of this device beyond any one of these limits may

cause permanent damage. For reliable continuous operation

the device voltage and current must not exceed the maximum

operating values specified in the table on page one.

Bias conditions should also satisfy the following expression:

< (T

- T

) / R

TH’

j-l

*** With specified application circuit.

**** No RF Drive

303 South Technology Court Broomfield, CO 80021

Phone: (800) SMI-MMIC

http://www.sirenza.com

EDS-104641 Rev C

Preliminary

SZM-2066Z 2.4-2.7GHz 2W Power Amp

Pin Out Description

Pin #

7, 11,12, 22, 29, 31,

39, 40

1,10, 21, 30

4-5

Function

GND

VC1

VBIAS12

R1A-R2A

RFIN

VPC1

Description

These are no connect (NC) pins and are not wired inside the package. It is recommended to con-

nect them as shown in the application circuit to achieve the stated performance.

These pins are internally grounded inside the package to the backside ground paddle. It is recom-

mended to also ground them external to the package to achieve the specified performance.

This is the collector of the first stage.

This is the supply voltage for the active bias circuit of the 1st and 2nd stages.

A resistor is tied across these pins internal to the package.

This is the RF input pin. It is DC grounded inside the package. Do not apply DC voltage to this pin.

Power up/down control pin for the 1st stage. An external series resistor is required for proper set-

ting of bias levels depending on control voltage. The voltage on this pin should never exceed the

voltage on pin 3 by more than 0.5V unless the supply current from pin 3 is limited < 10mA.

Power up/down control pin for the 2nd stage. An external series resistor is required for proper set-

ting of bias levels depending on control voltage. The voltage on this pin should never exceed the

voltage on pin 3 by more than 0.5V unless the supply current from pin 3 is limited < 10mA.

These two pins are connected internal to the package and connect to the 2nd stage collector. To

achieve specified performance, the layout of these pins should match the Recommended Land

Pattern, pg. 13.

These pins have capacitors across them internal to the package as shown in the below schematic.

They are used as tuning and RF coupling elements between the 2nd and 3rd stage.

These are the connections to the base of the 3rd stage output device. To achieve specified perfor-

mance, the layout of these pins should match the Recommended Land Pattern, pg. 13.

Power up/down control pin for the 2nd stage. An external series resistor is required for proper set-

ting of bias levels depending on control voltage. The voltage on this pin should never exceed the

voltage on pin 32 by more than 0.5V unless the supply current from pin 33 is limited < 10mA.

This is the output port for the power detector. It samples the power at the input of the 3rd stage.

These are the RF output pins and DC connections to the 3rd stage collector.

This is the supply voltage for the active bias circuit of the 3rd stage.

VPC2

13, 38

14-15

17-18

33-34

36-37

16,35

23-28

VC2A, VC2B

C1A-C2A

C3A-C4A

C4B-C3B

C2B-C1B

VB3A, VB3B

VPC3

VDET

RFOUT

VBIAS3

Simplified Device Schematic

C3B

VBIAS3

VC2B

VB3B

C1B

C2B

C4B

GND

VC1

VBIAS12

R1A

R2A

RFIN

VPC1

VPC2

GND

C1A

C2A

C3A

VC2A

VB3A

C4A

VPC3

GND

RFOUT

VDET

GND

303 South Technology Court Broomfield, CO 80021

Phone: (800) SMI-MMIC

http://www.sirenza.com

EDS-104641 Rev C

Preliminary

SZM-2066Z 2.4-2.7GHz 2W Power Amp

Measured 2.4-2.5 GHz Application Circuit Data (V

= V

= 5.0V, I

= 556mA, T=25C)

EVM vs Pout T=+25c

802.11g, OFDM 54Mb/S, 64QAM

5.0

4.5

4.0

3.5

EVM(%)

3.0

2.5

2.0

1.5

1.0

0.5

0.0

Pout(dBm)

2.5GHz

EVM vs Pout F=2.4GHz

802.11g, OFDM 54Mb/S, 64QAM

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

-40c

Pout(dBm)

+25c

+85c

2.4GHz

EVM vs Pout F=2.5GHz

802.11g, OFDM 54Mb/S, 64QAM

5.0

4.5

4.0

3.5

EVM(%)

3.0

2.5

2.0

1.5

1.0

0.5

0.0

-40c

Pout(dBm)

+25c

+85c

-60

-65

IM3(dBc)

-30

-35

-40

-45

-50

-55

IM3 vs Pout (2 Tone Avg.),T=+25c

Tone Spacing = 1MHz

Pout(dBm)

2.4GHz

2.5GHz

Typical Gain vs Pout, F=2.4GHz

Gain(dB)

Pout(dBm)

+25c

Typical Gain vs Pout, F=2.5GHz

Pout(dBm)

+25c

+85c

-40c

+85c

-40c

303 South Technology Court Broomfield, CO 80021

Phone: (800) SMI-MMIC

http://www.sirenza.com

EDS-104641 Rev C

Preliminary

SZM-2066Z 2.4-2.7GHz 2W Power Amp

Measured 2.4-2.5 GHz Application Circuit Data (V

= V

= 5.0V, I

= 556mA, T=25C)

Narrow band S11 - Input Return Loss

-45

Narrow band S12 - Reverse Isolation

-5

-50

-10

-55

S11(dB)

S12(dB)

-15

-60

-20

-65

-25

-70

-30

2.0

2.1

2.2

2.3

2.4

2.5

2.6

2.7

2.8

2.9

3.0

-75

2.0

2.1

2.2

2.3

2.4

2.5

2.6

2.7

2.8

2.9

3.0

Frequency(GHz)

-40C

+25C

+85C

Frequency(GHz)

-40C

+25C

+85C

Narrow band S21 - Forw ard Gain

-5

-10

Narrow band S22 - Output Return Loss

S21(dB)

2.0

2.1

2.2

2.3

2.4

2.5

2.6

2.7

2.8

2.9

3.0

S22(dB)

-15

-20

-25

-30

-35

2.0

2.1

2.2

2.3

2.4

2.5

2.6

2.7

2.8

2.9

3.0

Frequency(GHz)

-40C

+25C

+85C

Frequency(GHz)

-40C

+25C

+85C

DC Supply Current vs Pout, T=+25C

1.1

1.0

0.9

Idc(A)

0.8

0.7

0.6

0.5

0.4

2.4GHz

Pout(dBm)

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

DC Supply Current vs Pout, F=2.4GHz

2.5GHz

Pout(dBm)

-40c

+25c

+85c

303 South Technology Court Broomfield, CO 80021

Phone: (800) SMI-MMIC

http://www.sirenza.com

EDS-104641 Rev C

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