To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
MITSUBISHI POWER MOSFET
Y
INAR
IM
PREL
.
ation
nge.
pecific to cha
final se subject
a
is not limits ar
This
otice:parametric
N
Some
FY4AEJ-03
HIGH-SPEED SWITCHING USE
Nch/Pch POWER MOSFET
FY4AEJ-03
OUTLINE DRAWING
Dimensions in mm
6.0
4.4
5.0
1.8 MAX.
0.4
1.27
SOURCE
GATE
DRAIN
q
q
q
q
4V DRIVE
V
DSS ...............................................................................
±30V
r
DS (ON) (MAX) ........................................................
30/80mΩ
I
D .........................................................................................
±4A
SOP-8
APPLICATION
Motor control, Lamp control, Solenoid control,
DC-DC converter, Li-ionbattery, notebook p/c, etc
MAXIMUM RATINGS
(Tc = 25°C)
Symbol
V
DSS
V
GSS
I
D
I
DM
I
DA
I
S
I
SM
P
D
T
ch
T
stg
—
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
Typical value
L = 10µH
V
GS
= 0V
V
DS
= 0V
Conditions
Ratings
n-ch
30
±20
4
28
4
1.7
6.8
1.6
–55~+150
–55~+150
0.07
p-ch
–30
±20
–4
–28
–4
–1.7
–6.8
1.6
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Aug. 1999
MITSUBISHI POWER MOSFET
.
ation
nge.
pecific to cha
inal se subject
af
is not limits ar
This
otice:parametric
N
Some
P
AR
IMIN
REL
Y
FY4AEJ-03
HIGH-SPEED SWITCHING USE
Nch/Pch POWER MOSFET
ELECTRICAL CHARACTERISTICS
(Tch = 25°C)
N-ch
Symbol
V
(BR) DSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
r
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-a)
t
rr
Parameter
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Test conditions
I
D
= 1mA, V
GS
= 0V
V
GS
=
±20V,
V
DS
= 0V
V
DS
= 30V, V
GS
= 0V
Limits
Min.
30
—
—
1.0
—
—
—
—
—
—
—
V
DD
= 15V, I
D
= 2A, V
GS
= 10V, R
GEN
= R
GS
= 50Ω
—
—
—
—
—
—
Typ.
—
—
—
1.5
23
40
8
550
220
115
12
20
40
40
0.75
—
100
Max.
—
±0.1
0.1
2.0
30
55
—
—
—
—
—
—
—
—
1.10
78.1
—
Unit
V
µA
mA
V
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
Gate-source threshold voltage I
D
= 1mA, V
DS
= 10V
Drain-source on-state resistance I
D
= 4A, V
GS
= 10V
Drain-source on-state resistance I
D
= 2A, V
GS
= 4V
Forward transfer admittance
I
D
= 4A, V
DS
= 10V
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
V
DS
= 10V, V
GS
= 0V, f = 1MHz
I
S
= 1.7A, V
GS
= 0V
Channel to ambiet
I
S
= 1.7A, d
is
/d
t
= –50A/µs
P-ch
Symbol
V
(BR) DSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
r
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-a)
t
rr
Parameter
Drain-source breakdown voltage I
D
= 1mA, V
GS
= 0V
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
V
GS
=
±20V,
V
DS
= 0V
V
DS
= –30V, V
GS
= 0V
I
D
= –1mA, V
DS
= –10V
Test conditions
Limits
Min.
–30
—
—
–1.5
—
—
—
—
—
—
—
V
DD
= –15V, I
D
= –2A, V
GS
= –10V, R
GEN
= R
GS
= 50Ω
—
—
—
—
—
—
Typ.
—
—
—
–2.0
60
115
6
680
180
90
10
15
50
30
–0.88
—
70
Max.
—
±0.1
–0.1
–2.5
80
180
—
—
—
—
—
—
—
—
–1.20
78.1
—
Unit
V
µA
mA
V
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
Drain-source on-state resistance I
D
= –4A, V
GS
= –10V
Drain-source on-state resistance I
D
= –2A, V
GS
= –4V
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
I
D
= –4A, V
DS
= –10V
V
DS
= –10V, V
GS
= 0V, f = 1MHz
I
S
= –1.7A, V
GS
= 0V
Channel to ambiet
I
S
= –1.7A, d
is
/d
t
= 50A/µs
Aug. 1999
MITSUBISHI POWER MOSFET
.
ation
nge.
pecific to cha
inal se subject
af
is not limits ar
This
otice:parametric
N
Some
P
AR
IMIN
REL
Y
FY4AEJ-03
HIGH-SPEED SWITCHING USE
Nch/Pch POWER MOSFET
PERFORMANCE CURVES (N-ch)
POWER DISSIPATION DERATING CURVE
2.0
POWER DISSIPATION P
D
(W)
MAXIMUM SAFE OPERATING AREA
5
3
2
tw = 10µs
100µs
1ms
10ms
100ms
T
C
= 25°C
Single Pulse
DRAIN CURRENT I
D
(A)
1.6
10
1
7
5
3
2
1.2
10
0
0.8
7
5
3
2
7
5
3
0.4
10
–1
DC
2 3
5 7
10
0
2 3
5 7
10
1
2 3
5
0
0
50
100
150
200
CASE TEMPERATURE T
C
(°C)
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
20
V
GS
=10V,8V,6V,5V
4V
OUTPUT CHARACTERISTICS
(TYPICAL)
10
V
GS
= 10V,8V,6V,5V
4V
DRAIN CURRENT I
D
(A)
12
Tc = 25°C
Pulse Test
DRAIN CURRENT I
D
(A)
16
8
6
3V
8
3V
P
D
= 1.6W
4
P
D
= 1.6W
4
2
0
0
0.2
0.4
0.6
0.8
1.0
0
0
0.1
0.2
0.3
0.4
0.5
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN-SOURCE VOLTAGE V
DS
(V)
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
1.0
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(mΩ)
Tc = 25°C
Pulse Test
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
100
Tc = 25°C
Pulse Test
0.8
80
0.6
60
V
GS
= 4V
0.4
I
D
= 8A
4A
40
10V
0.2
2A
20
0
0
2
4
6
8
10
0
10
–1
2 3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
10
2
DRAIN CURRENT I
D
(A)
Aug. 1999
GATE-SOURCE VOLTAGE V
GS
(V)
MITSUBISHI POWER MOSFET
.
ation
nge.
pecific to cha
inal se subject
af
is not limits ar
This
otice:parametric
N
Some
P
AR
IMIN
REL
Y
FY4AEJ-03
HIGH-SPEED SWITCHING USE
Nch/Pch POWER MOSFET
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
10
2
7
5
TRANSFER CHARACTERISTICS
(TYPICAL)
20
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER
ADMITTANCE
y
fs
(S)
16
3
2
12
Tc = 25°C
V
DS
= 10V
Pulse Test
10
1
7
5
3
2
T
C
= 25°C,75°C,125°C
V
DS
=10V
Pulse Test
8
4
0
0
2
4
6
8
10
10
0 0
10
2
3
5 7
10
1
2
3
5 7
10
2
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
2
SWITCHING CHARACTERISTICS
(TYPICAL)
2
10
3
10
2
Ciss
t
f
t
d(off)
t
r
CAPACITANCE
Ciss, Coss, Crss (pF)
7
5
3
2
SWITCHING TIME (ns)
7
5
3
2
Coss
10
1
7
5
3
2
t
d(on)
10
2
7
5
3
2
Crss
Tch = 25°C
V
GS
= 0V
f = 1MH
Z
2 3
5 7
10
0
2 3
5 7
10
1
2
10
–1
10
0
10
–1
Tch = 25°C
V
GS
= 10V
V
DD
= 15V
R
GEN
= R
GS
= 50Ω
2
3
5 7
10
0
2
3
5 7
10
1
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN CURRENT I
D
(A)
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
10
20
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
V
GS
= 0V
Pulse Test
GATE-SOURCE VOLTAGE V
GS
(V)
8
V
DS
=
15V
SOURCE CURRENT I
S
(A)
16
T
C
=
125°C
75°C
25°C
6
12
4
20V
25V
8
2
Tch = 25°C
I
D
=4A
4
0
0
4
8
12
16
20
0
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE Q
g
(nC)
SOURCE-DRAIN VOLTAGE V
SD
(V)
Aug. 1999
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