100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
100 mA, 65 V, PNP, 硅, 小信号晶体管, TO-236AB
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
厂商名称 | Weitron Technology |
包装说明 | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code | unknow |
ECCN代码 | EAR99 |
最大集电极电流 (IC) | 0.1 A |
集电极-发射极最大电压 | 30 V |
配置 | SINGLE |
最小直流电流增益 (hFE) | 125 |
JESD-30 代码 | R-PDSO-G3 |
JESD-609代码 | e0 |
元件数量 | 1 |
端子数量 | 3 |
最高工作温度 | 150 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
极性/信道类型 | PNP |
最大功率耗散 (Abs) | 0.3 W |
表面贴装 | YES |
端子面层 | Tin/Lead (Sn/Pb) |
端子形式 | GULL WING |
端子位置 | DUAL |
晶体管元件材料 | SILICON |
标称过渡频率 (fT) | 100 MHz |
BC858A | BC856A | BC857A | BC859C | BC859B | BC858B | |
---|---|---|---|---|---|---|
描述 | 100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB | 100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR | 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR | 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR | 100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB | RF SMALL SIGNAL TRANSISTOR |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
厂商名称 | Weitron Technology | Weitron Technology | Weitron Technology | Weitron Technology | Weitron Technology | Weitron Technology |
包装说明 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code | unknow | unknow | unknow | unknow | unknow | unknow |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
最大集电极电流 (IC) | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A |
集电极-发射极最大电压 | 30 V | 65 V | 45 V | 30 V | 30 V | 30 V |
配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
最小直流电流增益 (hFE) | 125 | 125 | 125 | 420 | 220 | 220 |
JESD-30 代码 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 |
元件数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 | 3 | 3 |
最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
极性/信道类型 | PNP | PNP | PNP | PNP | PNP | PNP |
最大功率耗散 (Abs) | 0.3 W | 0.3 W | 0.3 W | 0.3 W | 0.3 W | 0.3 W |
表面贴装 | YES | YES | YES | YES | YES | YES |
端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
标称过渡频率 (fT) | 100 MHz | 100 MHz | 100 MHz | 100 MHz | 100 MHz | 100 MHz |
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