2SD669/2SD669A
NPN Epitaxial Planar Transistors
P b
Lead(Pb)-Free
1. EMITTER
2. COLLECTOR
3. BASE
1
2
3
TO-126C
ABSOLUTE MAXIMUM RATINGS(TA=25ºC)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Power Disspation
Junction Temperature
Storage , Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
j
T
stg
2SD669
180
120
5.0
1.5
1.0
150
-55 to +150
2SD669A
180
160
5.0
Unit
V
V
V
A
W
˚C
˚C
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2SD669/2SD669A
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted) (Countinued)
Characteristics
Collector-Emitter Breakdown Voltage
I
C
= 1.0mA, I
E
= 0
Collector-Base Breakdown Voltage
2SD669
I
C
= 10mA, I
B
= 0
2SD669A
Emitter-Base Breakdown Voltage
I
C
= 0, I
E
= 1.0mA
Collector Cutoff Current
V
CB
= 160V, I
E
=0
Emitter Cutoff Current
V
EB
= 4.0V, I
C
=0
ON CHARACTERISTICS
DC Current Gain
V
CE
= 5.0V, I
C
= 150mA
V
CE
= 5.0V, I
C
= 500mA
Collector-Emitter Saturation Voltage
I
C
= 500mA, I
B
= 50mA
Base-Emitter ON Voltage
V
CE
= 5.0V, I
C
= 150mA
Transition frequency
V
CE
= 5.0V, I
C
= 150mA
Collecotr Output Capacitance
V
CB
= 10V, I
E
= 0, f = 1MHz
CLASSIFICATION OF h
FE(1)
Rank
Range
2SD669
2SD669A
B
60-120
60-120
2SD669
2SD669A
h
FE(1)
60
60
30
-
-
-
-
140
14
320
200
-
1.0
1.5
-
-
V
V
MHz
pF
Symbol
V
(BR)CBO
Min
180
120
160
5.0
-
-
Typ
-
Max
-
Unit
V
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
-
-
-
-
-
-
10
10
V
V
µA
mA
-
h
FE(2)
V
CE(sat)
V
BE(ON)
f
T
C
ob
-
-
-
-
C
100-200
100-200
D
160-320
-
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2SD669/2SD669A
30
Collector power dissipation P
C
(W)
3
Collector current I
C
(A)
1.0
0.3
0.1
0.03
0.01
2SD669
1
3
10
30
100
DC Operation(T
C
= 25°C)
(120 V, 0.04 A)
(160 V, 0.02A)
2SD669A
300
(13.3 V, 1.5 A)
(40 V, 0.5 A)
20
10
0
50
100
150
Fig.1 Maximum Collector Dissipation Curve
1.0
0.8
0.6
0.4
0.2
5
0
5.
5.
4.5
.0
4
3.5
3.0
2.5
Case temperature T
C
(°C)
Fig.2 Area of Safe Operation
500
Collector current I
C
(mA)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
P
T
C
= 25°C
200
100
V
CE
= 5 V
C
=
1.5
1 .0
10
5
2
1
0
0.5 mA
I
B
= 0
0
Fig.3 Typical Output Characteristecs
10
20
30
40
50
Collector to emitter voltage V
CE
(V)
Fig.4 Typical Transfer Characteristics
Collector to emitter saturation voltage V
CE(sat)
(V)
0.2
0.4
0.6
0.8
1.0
Base to emitter voltage V
BE
(V)
300
DC current transfer ratio h
FE
250
200
150
100
50
1
75
°
C
Ta =
1.2
1.0
0.8
0.6
I
C
= 10 I
B
25
–25
25
–25
20
Ta = 75
°
C
2.0
20
W
50
V
CE
= 5 V
1
3
10
100 300 1,000 3,000
30
Collector current I
C
(mA)
0.2
0
1
3
Fig.5 DC Current Transfer Ratio
vs. Collector Current
10
30
100 300
Collector current I
C
(mA)
Fig.6 Collector to Emitter Saturation Voltage
vs. Collector Current
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–2
25
5
T
C
=7
0.4
5
°
C
1,000
18-Oct-05
2SD669/2SD669A
1.2
Base to emitter ON voltage V
BE( ON )
(V)
1.0
0.8
0.6
0.4
0.2
0
Gain bandwidth product f
T
(MHz)
I
C
= 10 I
B
25
°
C
T
C
= –
25
75
240
200
160
120
80
40
0
10
V
CE
= 5 V
Ta = 25°C
1
3
10
30
100 300
Collector current I
C
(mA)
1,000
30
100
300
Collector current I
C
(mA)
1,000
Fig.7 Base to Emitter ON Voltage
vs. Collector Current
Fig.8 Gain Bandwidth Product
vs. Collector Current
Collector output capacitance C
ob
(pF)
200
100
50
20
10
5
2
f = 1 MHz
I
E
= 0
1
10
2
5
20
50 100
Collector to base voltage V
CB
(V)
Fig.9 Collector Output Capacitance
vs. Collector to Base Voltage
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2SD669/2SD669A
TO-126C Outline Dimensions
unit:mm
TO-126C
Dim
A
A1
b
b1
c
D
E
e
e1
L
L1
P
Φ1
Φ2
Min
3.000
1.800
0.660
1.170
0.450
7.800
10.800
4.460
15.100
1.300
4.040
2.700
3.100
Max
3.400
2.200
0.860
1.370
0.600
8.200
11.200
4.660
15.500
1.500
4.240
2.900
3.300
2.280 TYP
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FPGA/CPLD
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