2SD1616
2SD1616A
NPN Transistors
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
1
2
3
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Device Dissipation T
A
=25 C
Junction Temperature
Storage, Temperature
Symbol
VCEO
VCBO
VEBO
IC
PD
Tj
Tstg
2SD16116
50
60
6.0
1.0
0.75
150
-55 to +150
2SD1616A
60
120
Unit
Vdc
Vdc
Vdc
Adc
W
C
C
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage (IC= 2.0 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= 10 uAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= 10 uAdc, IC=0)
Collector Cutoff Current (VCB=60 Vdc, IE=0)
Emitter Cutoff Current (VEB= 6.0 Vdc, I C=0)
2SD1616
2SD1616A
2SD1616
2SD1616A
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
Min
50
60
60
120
6.0
-
-
Max
-
-
-
0.1
0.1
Unit
Vdc
Vdc
Vdc
uAdc
uAdc
WEITRON
2SD1616
2SD1616A
ELECTRICAL CHARACTERISTICS
(TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
TYP
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC=100 mAdc, VCE=2.0 Vdc)
DC Current Gain
(IC=1.0 mAdc, VCE= 2.0 Vdc)
Collector-Emitter Saturation Voltage
(1)
(IC= 1.0 mAdc, IB= 50 mAdc)
Base-Emitter Saturation Voltage
(1)
(IC= 1.0 mAdc, IB= 50 mAdc)
Base-Emitter on Voltage
(1)
(I C =50mA, VCE =2.0V)
Current-Gain-Bandwidth Product
(IC= 100 mAdc, VCE=2.0 Vdc, f=30MHz)
Output Capacitance
(VCB=10V, I E =0V, f= 1MHZ)
Cob
hFE
(1)
hFE
(2)
VCE(sat)
VBE(sat)
V BE(on)
fT
135
-
600
-
-
81
-
-
-
-
0.15
0.9
-
Vdc
Vdc
Vdc
0.3
1.2
0.7
0.64
160
-
100
-
-
MHz
25
PF
SWITCHING CHARACTERISTICS
Turn-On Time
Storage Time
Fall Time
Note:
1. Pulse Test: Pulse Width 350 us, Duty Cycle 2%.
Classification of hFE(1)
Rank
Range
L
135-270
K
200-400
U
300-600
Vcc =10V, Ic =100 mA
I B1=-IB2=10 mA
VBE(OFF) =2-3V
tf
-
ton
ts
-
-
0.07
0.95
0.07
-
-
-
us
WEITRON
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