2SC1623
NPN General Purpose Transistors
P b
Lead(Pb)-Free
1
2
3
SOT-23
MAXIMUM RATINGS
(Ta=25°C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Device Dissipation
T
A
=25°C
Junction Temperature
Storage Temperature
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
Tj
Tstg
Value
50
60
5.0
100
200
+150
-55 to +150
Unit
V
V
V
mA
mW
°C
°C
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2SC1623
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage
I
C
= 1mA, I
B
= 0
Collector-Base Breakdown Voltage
I
C
= 100µA, I
E
= 0
Emitter-Base Breakdown Voltage
I
E
= 100µA, I
C
=0
Collector Cutoff Current
V
CB
= 60V, I
E
= 0
Emitter Cutoff Current
V
EB
= 5V, I
C
= 0
Symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
Min
50
60
Typ
-
-
Max
-
-
Unit
V
V
5.0
-
-
-
-
-
-
0.1
0.1
V
µA
µA
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage
I
C
= 100mA, I
B
= 10mA
Base-Emitter Saturation Voltage
I
C
= 100mA, I
B
= 10mA
DC Current Transfer Ration
V
CE
= 6V, I
C
= 1mA
V
CE(sat)
-
-
0.3
V
V
BE(sat)
h
FE
-
90
-
-
1.0
600
V
SMALL-SIGNAL CHARACTERISTICS
Transition frequence
V
CE
= 6V, I
C
=10mA
fT
-
250
-
MHz
CLASSIFICATION h
FE
Rank
Range
Marking
L4
90-180
L4
L5
135-270
L5
L6
200-400
L6
L7
300-600
L7
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Electrical characteristic curves
-500
COLLECTOR CURRENT : I
C
(
mA)
COLLECTOR CURRENT : I
C
(
mA)
-1mA
-80
-0.8mA
-0.7mA
-0.6mA
-0.5mA
-0.4mA
-0.3mA
-0.2mA
-0.1mA
COLLECTOR CURRENT : I
C
(
mA)
-200 Ta=100 C
25 C
-100
-55 C
-50
-20
-10
-5
-2
-1
-0.5
V
CE
=-3
V
-100
Ta=25 C
-0.9mA
-500
Ta=25 C
-5.0mA
-4.5mA
-4.0mA
-3.5mA
-3.0mA
-2.5mA
-2.0mA
-1.5mA
-1.0mA
-0.5mA
-400
-60
-300
-40
-200
-20
-100
-0.2
-0.1
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -2.2
0
0
-1
-2
-3
-4
I
B
=0A
-5
0
I
B
=0A
0
-5
-10
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.1 Grounded emitter propogation
1000
500
Fig.2 Grounded emitter output
characteristics (I)
1000
500
Ta
=
100 C
200
100
50
25 C
V
CE
=-
3V
Fig.3 Ground emitter output
characteristics (ΙΙ)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(
V)
Ta
=
25 C
Ta=25 C
-1
-0.5
-0.2
-0.1
-0.05
-0.02
-1 -2
I
C
/I
B
=
50
20
10
DC CURRENT GAIN : h
FE
200
100
50
DC CURRENT GAIN : h
FE
V
CE
=-5V
-3V
-1V
-
55 C
20
-1
-2
-5 -10 -20
-50 -100 -200 -500 -1000
20
-1
-2
-5 -10 -20
-50 -100 -200 -500 -1000
-5 -10 -20
-50 -100 -200 -500
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs
collector current (Ι)
Fig.5 DC current gain vs.
collector current (ΙΙ)
Ta
=
25 C
V
CE
=-
5V
Fig.6 Collector emitter saturation
voltage vs. collector current (Ι)
COLLECTOR OUTPUT CAPACITANCE : Cob
(
pF)
EMITTER INPUT CAPACITANCE : Cib
(
pF)
-0.5
COLLECTOR SATURATION
VOLTAGE : V
CE(sat)
(
V)
TRANSITION FREQUENCY : f
T
(
MHz)
-1.0
l
C
/l
B
=
10
-0.3
-0.2
-0.1
1000
500
100
50
20
10
5
2
-0.5
Ta
=
25 C
f
=
1MHz
I
E
=
0A
I
C
=
0A
Ta
=
100 C
25 C
-0.05
-55 C
-0.03
-0.02
-0.01
-1
-2
-5
-10 -20
-50 -100 -200 -500 -1000
200
100
50
0.5
1
2
5
10
20
50
-1
-2
-5
-10
-20
-50
COLLECTOR CURRENT : I
C
(mA)
EMITTER CURRENT : I
E
(mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current (ΙΙ )
Fig.8 Gain bandwidth product vs.
emitter current
Fig.9 Collectur output capacitance vs.
collector-base voltage. Emitter input
capacitance vs. emitter -base voltage
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
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