RDX080N50
Transistors
10V Drive Nch MOS FET
RDX080N50
Structure
Silicon N-channel MOS FET
External dimensions
(Unit : mm)
TO-220FM
10.0
φ
3.2
4.5
2.8
14.0
Features
1) Low on-resistance.
2) Low input capacitance.
3) Excellent resistance to damage from static electricity.
(1)Gate
15.0
12.0
8.0
2.5
1.3
1.2
0.8
2.54
(1) (2) (3)
2.54
0.75
2.6
Applications
Switching
(2)Drain
(3)Source
Packaging specifications
Package
Type
RDX080N50
Code
Basic ordering unit (pieces)
Bulk
−
500
Inner circuit
*1
*2
(1)
(2)
(3)
∗1
GATE PROTECTION DIODE
*2 BODY DIODE
(1) Gate
(2) Drain
(3) Source
Absolute maximum ratings
(Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
∗1
I
DP
∗2
I
S
I
SP
∗2
I
AS
∗3
E
AS
∗4
P
D
Tch
Tstg
Limits
500
±30
±8
±32
8
32
8
85
40
150
−55
to
+150
Unit
V
V
A
A
A
A
A
mJ
W
°C
°C
Avalanche current
Avalanche energy
Total power dissipation (Tc=25°C)
Channel temperature
Range of storage temperature
∗1
Limited only by maximum temperature allowed
∗2
Pw 10µs, Duty cycle 1%
∗4
L
=
2.3mH V
DD
=90V Rg=25Ω starting Tch=25°C
∗3
L
=
2.3mH V
DD
=90V Rg=25Ω
Thermal resistance
Parameter
Channel to case
Symbol
Rth(ch-c)
Limits
Unit
°C/W
3.125
1/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
FPGA/CPLD
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
