Variable Capacitance Diodes
MA27V17
Silicon epitaxial planar type
For VCO
■
Features
•
Good linearity and large capacitance-ratio in C
D
−
V
R
relation
•
Small series resistance r
D
1
0.60
±0.05
0.27
+0.05
–0.02
2
0.10
+0.05
–0.02
Unit: mm
1.00
±0.05
1.40
±0.05
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Reverse voltage
Junction temperature
Storage temperature
Symbol
V
R
T
j
T
stg
Rating
6
125
−55
to
+125
Unit
V
°C
5˚
0.15 min.
5˚
0 to 0.01
°C
1 : Anode
2 : Cathode
SSSMini2-F1 Package
Marking Symbol: L
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Reverse current
Diode capacitance
Symbol
I
R
C
D(1V)
C
D(4V)
Capacitance ratio
Series resistance
*
C
D(1V)
/C
D(4V)
r
D
V
R
=
4 V, f
=
470 MHz
V
R
=
5 V
V
R
=
1 V, f
=
1 MHz
V
R
=
4 V, f
=
1 MHz
2.86
1.17
2.34
Conditions
Min
Typ
Max
10
3.10
1.27
2.54
0.35
Ω
Unit
nA
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 470 MHz
3. *: Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER
0.15 max.
0.52
±0.03
0.15 min.
Publication date: August 2003
SKD00085AED
1
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
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if any of the products or technologies described in this material and controlled under the "Foreign
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Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
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•
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2002 JUL
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